JPH03222479A - Shockley diode - Google Patents
Shockley diodeInfo
- Publication number
- JPH03222479A JPH03222479A JP1979190A JP1979190A JPH03222479A JP H03222479 A JPH03222479 A JP H03222479A JP 1979190 A JP1979190 A JP 1979190A JP 1979190 A JP1979190 A JP 1979190A JP H03222479 A JPH03222479 A JP H03222479A
- Authority
- JP
- Japan
- Prior art keywords
- type
- region
- concentration
- ibo
- base region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000005468 ion implantation Methods 0.000 claims abstract description 5
- 238000009792 diffusion process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
Landscapes
- Thyristors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はショックレーダイオードに関し特にショックレ
ーダイオードによる着火回路用途の改良構造に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a Shockley diode, and more particularly to an improved structure for use in an ignition circuit using a Shockley diode.
従来の逆導通ショックレーダイオードの断面構造を第３
図に示す。ショックレーダイオード部は、Ｎ型サブスト
レート３にＰ型不純物を拡散しＰ型アノード領域４を形
成し、更にＰ型ベース領域２およびＮ型カソード領域１
を拡散して形成される。The cross-sectional structure of the conventional reverse conduction Shockley diode is shown in the third figure.
As shown in the figure. In the Shockley diode section, a P-type impurity is diffused into an N-type substrate 3 to form a P-type anode region 4, and a P-type base region 2 and an N-type cathode region 1 are formed.
It is formed by diffusing.
逆導通部はショックレーダイオードの形成工程中でＰ空
領域９．Ｎ型領域５を拡散して形成される。The reverse conducting portion is formed in the P empty region 9 during the Shockley diode formation process. It is formed by diffusing the N type region 5.
全工程の拡散は熱ガス拡散方式を使用している。Diffusion in the entire process uses hot gas diffusion method.
次に動作原理について説明する。印加電圧が素子のブレ
ークオーバー電圧（ＶＢＯ）に達するとベースのフーナ
部で降伏が起り、降伏電流がショート穴に向って流れる
。この電流による電圧降下が約０．５ｖに達するとカソ
ードからの電子の注入が増加して波形は負性抵抗を示し
始める。このときカソード接合を約０．５■順バイアス
するのに必要な電流がＩＢＯである。蓄積された電子に
より、Ｎベース層の電位がＰアノードに対して下がり、
正孔の注入が起る。この正孔がＰベースに到達してここ
に蓄積するとＰベースの電位がカソードに対して上り、
カソードから更に電子が注入されるという正帰還がかか
り、素子はオン状態となる。Next, the operating principle will be explained. When the applied voltage reaches the breakover voltage (VBO) of the device, breakdown occurs at the corner of the base, and breakdown current flows toward the short hole. When the voltage drop due to this current reaches about 0.5V, the injection of electrons from the cathode increases and the waveform begins to show negative resistance. At this time, the current required to forward bias the cathode junction by about 0.5 μm is IBO. The accumulated electrons lower the potential of the N base layer with respect to the P anode,
Hole injection occurs. When these holes reach the P base and accumulate there, the potential of the P base rises with respect to the cathode,
Positive feedback occurs in which more electrons are injected from the cathode, and the device turns on.
ショックレーダイオードは主に着火回路の着火素子とし
て使用されているが、回路の性質上、定のブレークオー
バー電圧（■ｌ］。）とできるだけ低いブレークオーバ
ー電流（ＩＢｏ）を持つ素子が要求される。このため■
□。、 ＶＢ。の制御性が、この素子を作るうえで最も
重要な要因となってくる。Shockley diodes are mainly used as ignition elements in ignition circuits, but due to the nature of the circuit, a device with a constant breakover voltage (■l) and as low a breakover current (IBo) as possible is required. . For this reason■
□. , V.B. Controllability is the most important factor in making this device.
上述従来のショックレーダイオードでは、Ｐベース濃度
とＮカソードの深さでＩＢＯを、又、基板濃度とＰベー
ス深さによりＶＢＯをそれぞれコントロールしている。In the conventional Shockley diode described above, the IBO is controlled by the P base concentration and the depth of the N cathode, and the VBO is controlled by the substrate concentration and the P base depth.
この際の拡散を熱ガス拡散方式としているが、この方式
だと拡散の際の濃度のばらつきが大きく不均一な濃度分
布となってしまう。Diffusion at this time is performed using a hot gas diffusion method, but this method results in large variations in concentration during diffusion, resulting in a non-uniform concentration distribution.
その為、ＶＥＯの分布がウェハー面内の濃度のばらつき
に大きく影響されてしまい制御する為に基板濃度を５Ｘ
１０”〜１．５ Ｘ １０ ＋ｓＣｍ−３に制限しなけ
ればならなかった。又、濃度が不均一になる為、Ｐベー
ス領域とＮ型カソード領域の幅を制御して所望の１８゜
を得ることが困難であるという問題点があった。Therefore, the distribution of VEO is greatly affected by concentration variations within the wafer surface, and in order to control it, the substrate concentration must be increased by 5x.
It had to be limited to 10" to 1.5 x 10 +sCm-3. Also, since the concentration would be non-uniform, the widths of the P base region and N-type cathode region should be controlled to obtain the desired 18°. The problem was that it was difficult to
本発明のショックレーダイオードはＰベース領域の拡散
をイオンインプラ方式とすることにより均一な濃度分布
で浅い領域を形成することができる為、基板濃度を２×
１０１５〜１．ｓ〜１．５ Ｘ １０１６ｃｍ−’とし
Ｐ型ベース領域の濃度を３×１０１５〜１．６〜２．０
×１０１７ｃｍ−’とすることにより■ゎ。を又、Ｐ型
ベース領域の濃度が均一な為、Ｐ型ベース領域とＮ型カ
ソード領域の幅を制御することによりＩＢＯをそれぞれ
制御する様にしている。In the Shockley diode of the present invention, by using the ion implantation method for diffusion of the P base region, it is possible to form a shallow region with a uniform concentration distribution.
1015-1. s ~ 1.5 x 1016 cm-' and the concentration of the P type base region is 3 x 1015 ~ 1.6 ~ 2.0
×1017cm-' By setting ■ゎ. Furthermore, since the concentration of the P-type base region is uniform, IBO is controlled by controlling the widths of the P-type base region and the N-type cathode region.
第１図は本発明の第１の実施例を示す。同図（ａ）は縦
断面図、同図（ｂ）はそのときのデイメンジョンのデー
タである。FIG. 1 shows a first embodiment of the invention. The figure (a) is a longitudinal sectional view, and the figure (b) is the dimension data at that time.
Ｎ型サブストレート３にＰ型アノード領域４゜Ｐ型ベー
ス領域９を形成する。次にイオンインプラ方式によりＰ
型ベース領域２を形成し更に従来の熱ガス拡散方式でＮ
型カソード領域１．独立したＰ型ベース領域の形成を行
い、最後にカンード電極７，７ノード電極８を形成する
。A P-type anode region 4 and a P-type base region 9 are formed on the N-type substrate 3. Next, P by the ion implantation method.
The mold base region 2 is formed and further N is heated using a conventional hot gas diffusion method.
Type cathode region 1. An independent P-type base region is formed, and finally cando electrodes 7 and 7-node electrodes 8 are formed.
第２図は本発明の第２の実施例の縦断面図を示す。本実
施例では逆導通部を中央部にもってきた形となっている
。この場合カソード面積が大きくなる為サージ耐量が向
上するという利点がある。FIG. 2 shows a longitudinal sectional view of a second embodiment of the invention. In this embodiment, the reverse conduction portion is placed in the center. In this case, since the cathode area becomes large, there is an advantage that surge resistance is improved.
尚、Ｐ−＜−ス領域の形成については、第１の実施例と
同様イオンインプラ方式で行っている。It should be noted that the formation of the P-<- region is performed by the ion implantation method as in the first embodiment.
以上説明したように本発明はＮ型ベース濃度、Ｐ型ベー
ス濃度、Ｐ型ベース領域とＮ型カソード領域との幅を限
定することによりショックレーダイオードの特徴である
ＩＢＯＩ ＶＢＯの制御性の向上及びＩＢＯ値の低減、
例えばＶＢＯの制御において規格発生率の向上（従来よ
り約１５％の向上）又、エヨ。値が、従来値平均で５０
〜６０μＡあったものが、平均で約２０μＡまで下げる
ことができた。As explained above, the present invention improves the controllability of IBOI VBO, which is a characteristic of Shockley diodes, by limiting the N-type base concentration, the P-type base concentration, and the width of the P-type base region and the N-type cathode region. Reduction of IBO value,
For example, in VBO control, the standard occurrence rate has improved (approximately 15% higher than before). The average value is 50
What used to be ~60 μA was able to be reduced to about 20 μA on average.
第１図（ａ） 、 （ｂ）はそれぞれ本発明の第１の実
施例の縦断面図及び条件を示す図、第２図は本発明の第
２の実施例を示す縦断面図、第３図は従来の技術による
ショックレーダイオードの縦断面図を示す。FIGS. 1(a) and 1(b) are a longitudinal cross-sectional view and a diagram showing the conditions of the first embodiment of the present invention, FIG. 2 is a longitudinal cross-sectional view of the second embodiment of the present invention, and FIG. The figure shows a longitudinal section through a Shockley diode according to the prior art.
Claims (2)
Ｐベース領域中にＮカソード領域を有し、前記Ｎカソー
ド領域はＰベース領域まで達するショート穴を有し、そ
の反対の面はＰ型アノード領域を有するショックレーダ
イオードにおいて、Ｎ型基板濃度を２×１０＾１＾５〜
１．５×１０＾１＾６ｃｍ＾−＾３とし、Ｐ型ベース領
域の濃度を３×１０＾１＾６〜２．０×１０＾１＾７ｃ
ｍ＾−＾３とし、更にＰ型ベース領域とＮ型カソード領
域の幅を１〜５μｍとすることを特徴とするショックレ
ーダイオード(1) A P-type base region is provided on one main surface of an N-type substrate, and an N-type cathode region is further provided in the P-base region, and the N-type cathode region has a short hole that reaches the P-base region, and vice versa. In a Shockley diode with a P-type anode region, the surface has an N-type substrate concentration of 2×10^1^5~
1.5 x 10^1^6 cm^-^3, and the concentration of the P type base region is 3 x 10^1^6 to 2.0 x 10^1^7c
m^-^3, and further characterized in that the width of the P-type base region and the N-type cathode region is 1 to 5 μm.
いることを特徴とする請求項１記載の ショックレーダイオード(2) The Shockley diode according to claim 1, wherein the P-type base region is formed by ion implantation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1979190A JPH03222479A (en) | 1990-01-29 | 1990-01-29 | Shockley diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1979190A JPH03222479A (en) | 1990-01-29 | 1990-01-29 | Shockley diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03222479A true JPH03222479A (en) | 1991-10-01 |
Family
ID=12009166
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1979190A Pending JPH03222479A (en) | 1990-01-29 | 1990-01-29 | Shockley diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03222479A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5212579A (en) * | 1975-07-21 | 1977-01-31 | Hitachi Ltd | Ion injection method and ion injector |
| JPS5619057B2 (en) * | 1974-03-28 | 1981-05-02 | ||
| JPH01218066A (en) * | 1988-02-26 | 1989-08-31 | Nec Corp | Semiconductor device |
-
1990
- 1990-01-29 JP JP1979190A patent/JPH03222479A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5619057B2 (en) * | 1974-03-28 | 1981-05-02 | ||
| JPS5212579A (en) * | 1975-07-21 | 1977-01-31 | Hitachi Ltd | Ion injection method and ion injector |
| JPH01218066A (en) * | 1988-02-26 | 1989-08-31 | Nec Corp | Semiconductor device |
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