GB1482298A - Monolithically integrated circuit - Google Patents

Monolithically integrated circuit

Info

Publication number
GB1482298A
GB1482298A GB2212775A GB2212775A GB1482298A GB 1482298 A GB1482298 A GB 1482298A GB 2212775 A GB2212775 A GB 2212775A GB 2212775 A GB2212775 A GB 2212775A GB 1482298 A GB1482298 A GB 1482298A
Authority
GB
United Kingdom
Prior art keywords
zone
collector
epitaxial layer
emitter
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2212775A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of GB1482298A publication Critical patent/GB1482298A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H01L21/8226—Bipolar technology comprising merged transistor logic or integrated injection logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

1482298 Integrated circuit transistors ITT INDUSTRIES Inc 22 May 1975 [31 May 1974] 22127/75 Heading H1K In the manufacture, in an integrated structure containing non-I<SP>2</SP>L devices, of an inverse vertical transistor (Fig. 4), the base zone 12 of which forms the collector of a lateral current injector transistor, after formation of the buried emitter zone 4 of the vertical transistor and provision in the epitaxial layer 9 of its emittercontacting zone 3 and the collector zone 12 and emitter zone 10 of the lateral transistor, there are formed in a single planar diffusion step the collector zone(s) 1 of the vertical transistor and an auxiliary #-enhacing emitter zone 2 extending laterally into its base zone from contacting zone 3. Where a plurality of collector zones are present in base zone 12 the auxiliary zone may extend closer to some than to others (Fig. 5, not shown). In the arrangement described there are several vertical multi-collector transistors on each side of the common linear emitter zone 10, the resistance of which is reduced by heavily doped P + strip 11 diffused simultaneously with contacting zone 3, and a P zone 7 provides isolation from conventional bipolar circuitry formed in the adjacent part of the epitaxial layer. Emitter zone 4 can be brought nearer the surface of the epitaxial layer to improve # by a further donor diffusion into the epitaxial layer after it has been partially formed.
GB2212775A 1974-05-31 1975-05-22 Monolithically integrated circuit Expired GB1482298A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19742426529 DE2426529C3 (en) 1974-05-31 1974-05-31 Planar diffusion process for manufacturing a transistor in a monolithically integrated I2 L circuit

Publications (1)

Publication Number Publication Date
GB1482298A true GB1482298A (en) 1977-08-10

Family

ID=5917044

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2212775A Expired GB1482298A (en) 1974-05-31 1975-05-22 Monolithically integrated circuit

Country Status (6)

Country Link
JP (1) JPS515974A (en)
DE (1) DE2426529C3 (en)
FR (1) FR2273373B3 (en)
GB (1) GB1482298A (en)
IT (1) IT1038519B (en)
NL (1) NL7506334A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5541533B2 (en) * 1974-12-04 1980-10-24
JPS52141587A (en) * 1976-05-20 1977-11-25 Matsushita Electric Ind Co Ltd Semiconductor device and its process
DE3004681A1 (en) * 1980-02-08 1981-08-13 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Diode element for integrated circuit - achieves low noise and small differential impedance by using three specified zones
US20080187018A1 (en) 2006-10-19 2008-08-07 Amberwave Systems Corporation Distributed feedback lasers formed via aspect ratio trapping
US9508890B2 (en) 2007-04-09 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaics on silicon
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material

Also Published As

Publication number Publication date
DE2426529A1 (en) 1975-12-11
DE2426529B2 (en) 1979-12-20
JPS515974A (en) 1976-01-19
DE2426529C3 (en) 1980-08-28
FR2273373A1 (en) 1975-12-26
FR2273373B3 (en) 1978-12-29
NL7506334A (en) 1975-12-02
IT1038519B (en) 1979-11-30

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee