FR2273373B3 - - Google Patents

Info

Publication number
FR2273373B3
FR2273373B3 FR7516605A FR7516605A FR2273373B3 FR 2273373 B3 FR2273373 B3 FR 2273373B3 FR 7516605 A FR7516605 A FR 7516605A FR 7516605 A FR7516605 A FR 7516605A FR 2273373 B3 FR2273373 B3 FR 2273373B3
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7516605A
Other languages
French (fr)
Other versions
FR2273373A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of FR2273373A1 publication Critical patent/FR2273373A1/fr
Application granted granted Critical
Publication of FR2273373B3 publication Critical patent/FR2273373B3/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821Combination of lateral and vertical transistors only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222Bipolar technology
    • H01L21/8226Bipolar technology comprising merged transistor logic or integrated injection logic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
FR7516605A 1974-05-31 1975-05-28 Expired FR2273373B3 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19742426529 DE2426529C3 (en) 1974-05-31 1974-05-31 Planar diffusion process for manufacturing a transistor in a monolithically integrated I2 L circuit

Publications (2)

Publication Number Publication Date
FR2273373A1 FR2273373A1 (en) 1975-12-26
FR2273373B3 true FR2273373B3 (en) 1978-12-29

Family

ID=5917044

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7516605A Expired FR2273373B3 (en) 1974-05-31 1975-05-28

Country Status (6)

Country Link
JP (1) JPS515974A (en)
DE (1) DE2426529C3 (en)
FR (1) FR2273373B3 (en)
GB (1) GB1482298A (en)
IT (1) IT1038519B (en)
NL (1) NL7506334A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5541533B2 (en) * 1974-12-04 1980-10-24
JPS52141587A (en) * 1976-05-20 1977-11-25 Matsushita Electric Ind Co Ltd Semiconductor device and its process
DE3004681A1 (en) * 1980-02-08 1981-08-13 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Diode element for integrated circuit - achieves low noise and small differential impedance by using three specified zones
US20080187018A1 (en) 2006-10-19 2008-08-07 Amberwave Systems Corporation Distributed feedback lasers formed via aspect ratio trapping
WO2008124154A2 (en) 2007-04-09 2008-10-16 Amberwave Systems Corporation Photovoltaics on silicon
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material

Also Published As

Publication number Publication date
DE2426529B2 (en) 1979-12-20
FR2273373A1 (en) 1975-12-26
IT1038519B (en) 1979-11-30
DE2426529A1 (en) 1975-12-11
JPS515974A (en) 1976-01-19
GB1482298A (en) 1977-08-10
NL7506334A (en) 1975-12-02
DE2426529C3 (en) 1980-08-28

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Legal Events

Date Code Title Description
ST Notification of lapse