IT1038519B - PLANAR DIFFUSION FOR THE FABERI CAATION OF A TRANSISTOR - Google Patents
PLANAR DIFFUSION FOR THE FABERI CAATION OF A TRANSISTORInfo
- Publication number
- IT1038519B IT1038519B IT2374275A IT2374275A IT1038519B IT 1038519 B IT1038519 B IT 1038519B IT 2374275 A IT2374275 A IT 2374275A IT 2374275 A IT2374275 A IT 2374275A IT 1038519 B IT1038519 B IT 1038519B
- Authority
- IT
- Italy
- Prior art keywords
- caation
- faberi
- transistor
- planar diffusion
- diffusion
- Prior art date
Links
- 238000009792 diffusion process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0821—Combination of lateral and vertical transistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8226—Bipolar technology comprising merged transistor logic or integrated injection logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19742426529 DE2426529C3 (en) | 1974-05-31 | 1974-05-31 | Planar diffusion process for manufacturing a transistor in a monolithically integrated I2 L circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1038519B true IT1038519B (en) | 1979-11-30 |
Family
ID=5917044
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT2374275A IT1038519B (en) | 1974-05-31 | 1975-05-27 | PLANAR DIFFUSION FOR THE FABERI CAATION OF A TRANSISTOR |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS515974A (en) |
DE (1) | DE2426529C3 (en) |
FR (1) | FR2273373B3 (en) |
GB (1) | GB1482298A (en) |
IT (1) | IT1038519B (en) |
NL (1) | NL7506334A (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5541533B2 (en) * | 1974-12-04 | 1980-10-24 | ||
JPS52141587A (en) * | 1976-05-20 | 1977-11-25 | Matsushita Electric Ind Co Ltd | Semiconductor device and its process |
DE3004681A1 (en) * | 1980-02-08 | 1981-08-13 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Diode element for integrated circuit - achieves low noise and small differential impedance by using three specified zones |
US20080187018A1 (en) | 2006-10-19 | 2008-08-07 | Amberwave Systems Corporation | Distributed feedback lasers formed via aspect ratio trapping |
WO2008124154A2 (en) | 2007-04-09 | 2008-10-16 | Amberwave Systems Corporation | Photovoltaics on silicon |
US8183667B2 (en) | 2008-06-03 | 2012-05-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Epitaxial growth of crystalline material |
-
1974
- 1974-05-31 DE DE19742426529 patent/DE2426529C3/en not_active Expired
-
1975
- 1975-05-22 GB GB2212775A patent/GB1482298A/en not_active Expired
- 1975-05-27 IT IT2374275A patent/IT1038519B/en active
- 1975-05-28 FR FR7516605A patent/FR2273373B3/fr not_active Expired
- 1975-05-29 NL NL7506334A patent/NL7506334A/en unknown
- 1975-05-31 JP JP50065986A patent/JPS515974A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
DE2426529B2 (en) | 1979-12-20 |
DE2426529A1 (en) | 1975-12-11 |
FR2273373A1 (en) | 1975-12-26 |
NL7506334A (en) | 1975-12-02 |
GB1482298A (en) | 1977-08-10 |
DE2426529C3 (en) | 1980-08-28 |
FR2273373B3 (en) | 1978-12-29 |
JPS515974A (en) | 1976-01-19 |
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