JPS52141587A - Semiconductor device and its process - Google Patents

Semiconductor device and its process

Info

Publication number
JPS52141587A
JPS52141587A JP5865076A JP5865076A JPS52141587A JP S52141587 A JPS52141587 A JP S52141587A JP 5865076 A JP5865076 A JP 5865076A JP 5865076 A JP5865076 A JP 5865076A JP S52141587 A JPS52141587 A JP S52141587A
Authority
JP
Japan
Prior art keywords
semiconductor device
injector
diffusion
hfe
deeply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5865076A
Other languages
Japanese (ja)
Inventor
Haruyasu Yamada
Tsutomu Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP5865076A priority Critical patent/JPS52141587A/en
Publication of JPS52141587A publication Critical patent/JPS52141587A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0244—I2L structures integrated in combination with analog structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To improve the hFE of the pnp transistor by forming a diffused layer of injector simultaneously with the isolation diffusion or by diffusing the injector deeply independently of the base diffusion of npn transistor.
JP5865076A 1976-05-20 1976-05-20 Semiconductor device and its process Pending JPS52141587A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5865076A JPS52141587A (en) 1976-05-20 1976-05-20 Semiconductor device and its process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5865076A JPS52141587A (en) 1976-05-20 1976-05-20 Semiconductor device and its process

Publications (1)

Publication Number Publication Date
JPS52141587A true JPS52141587A (en) 1977-11-25

Family

ID=13090450

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5865076A Pending JPS52141587A (en) 1976-05-20 1976-05-20 Semiconductor device and its process

Country Status (1)

Country Link
JP (1) JPS52141587A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5527697A (en) * 1978-08-11 1980-02-27 Siemens Ag Bipolar semiconductor integrated circuit and method of manufacturing same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS515974A (en) * 1974-05-31 1976-01-19 Itt
JPS516487A (en) * 1974-07-05 1976-01-20 Hitachi Ltd
JPS5132285A (en) * 1974-09-13 1976-03-18 Hitachi Ltd
JPS5150585A (en) * 1974-10-30 1976-05-04 Tokyo Shibaura Electric Co
JPS5154379A (en) * 1974-10-29 1976-05-13 Fairchild Camera Instr Co

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS515974A (en) * 1974-05-31 1976-01-19 Itt
JPS516487A (en) * 1974-07-05 1976-01-20 Hitachi Ltd
JPS5132285A (en) * 1974-09-13 1976-03-18 Hitachi Ltd
JPS5154379A (en) * 1974-10-29 1976-05-13 Fairchild Camera Instr Co
JPS5150585A (en) * 1974-10-30 1976-05-04 Tokyo Shibaura Electric Co

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5527697A (en) * 1978-08-11 1980-02-27 Siemens Ag Bipolar semiconductor integrated circuit and method of manufacturing same

Similar Documents

Publication Publication Date Title
FR2285715A1 (en) TRANSISTOR WITH DIFFUSED ISOLATION OF THE MANIFOLD
ES368777A1 (en) Method of manufacturing a zener diode
SE7714902L (en) POWER TRANSISTOR
JPS5324277A (en) Semiconductor devic e and its production
JPS52141587A (en) Semiconductor device and its process
ES402164A1 (en) Monolithic semiconductor device
JPS5762552A (en) Manufacture of semiconductor device
JPS5314579A (en) Semiconductor integrated circuit and its production
JPS5338990A (en) Iil semiconductor device
JPS5710968A (en) Semiconductor device
JPS561567A (en) Manufacture of semiconductor device
JPS5687360A (en) Transistor device
JPS5326580A (en) Semiconductor unit
JPS5710963A (en) Semiconductor device and manufacture thereof
JPS5275281A (en) Semiconductor device
JPS52133759A (en) Production of semicondutor integrated circuit device
JPS52154388A (en) Semiconductor integrated circuit device and its production
SE7910530L (en) SET TO MANUFACTURE INTEGRATED CIRCUITS
JPS5745276A (en) Manufacture of thyristor
JPS5310286A (en) Production of semiconductor device
JPS54127683A (en) Planar-type transistor
GB1052981A (en)
JPS5298485A (en) Semiconductor integrated circuit
JPS52106278A (en) Manufacture of bipolar cmos semiconductor device
JPS5735366A (en) Semiconductor integrated circuit device