GB2175138B - Bipolar integrated circuits - Google Patents

Bipolar integrated circuits

Info

Publication number
GB2175138B
GB2175138B GB8611203A GB8611203A GB2175138B GB 2175138 B GB2175138 B GB 2175138B GB 8611203 A GB8611203 A GB 8611203A GB 8611203 A GB8611203 A GB 8611203A GB 2175138 B GB2175138 B GB 2175138B
Authority
GB
United Kingdom
Prior art keywords
integrated circuits
bipolar integrated
bipolar
circuits
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8611203A
Other versions
GB8611203D0 (en
GB2175138A (en
Inventor
Ubaldo Mastromatteo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Microelettronica SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Microelettronica SpA filed Critical SGS Microelettronica SpA
Publication of GB8611203D0 publication Critical patent/GB8611203D0/en
Publication of GB2175138A publication Critical patent/GB2175138A/en
Application granted granted Critical
Publication of GB2175138B publication Critical patent/GB2175138B/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826Combination of vertical complementary transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/761PN junctions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222Bipolar technology
    • H01L21/8228Complementary devices, e.g. complementary transistors
    • H01L21/82285Complementary vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
GB8611203A 1985-05-09 1986-05-08 Bipolar integrated circuits Expired GB2175138B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT20640/85A IT1218471B (en) 1985-05-09 1985-05-09 BIPOLAR INTEGRATED CIRCUIT INCLUDING VERTICAL PNP TRANSISTORS WITH COLLECTOR ON THE SUBSTRATE

Publications (3)

Publication Number Publication Date
GB8611203D0 GB8611203D0 (en) 1986-06-18
GB2175138A GB2175138A (en) 1986-11-19
GB2175138B true GB2175138B (en) 1989-04-19

Family

ID=11169918

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8611203A Expired GB2175138B (en) 1985-05-09 1986-05-08 Bipolar integrated circuits

Country Status (6)

Country Link
JP (1) JPS61260666A (en)
FR (1) FR2581796B1 (en)
GB (1) GB2175138B (en)
IT (1) IT1218471B (en)
NL (1) NL8601107A (en)
SE (1) SE8602088L (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4951115A (en) * 1989-03-06 1990-08-21 International Business Machines Corp. Complementary transistor structure and method for manufacture
JP2835116B2 (en) * 1989-09-29 1998-12-14 株式会社東芝 Power IC and method of manufacturing the same
EP0915508A1 (en) * 1997-10-10 1999-05-12 STMicroelectronics S.r.l. Integrated circuit with highly efficient junction insulation
DE19805786A1 (en) 1998-02-12 1999-08-26 Siemens Ag Semiconductor component with structure to avoid cross currents
GB2367187B (en) * 2000-09-21 2002-11-13 Bookham Technology Plc An isolation device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648128A (en) * 1968-05-25 1972-03-07 Sony Corp An integrated complementary transistor circuit chip with polycrystalline contact to buried collector regions
GB1533156A (en) * 1975-02-08 1978-11-22 Sony Corp Semiconductor integrated circuits
EP0154682A1 (en) * 1983-11-18 1985-09-18 Motorola, Inc. Epitaxially isolated semiconductor device means and method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5942463B2 (en) * 1972-09-22 1984-10-15 ソニー株式会社 Semiconductor integrated circuit device
JPS5710964A (en) * 1980-06-25 1982-01-20 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648128A (en) * 1968-05-25 1972-03-07 Sony Corp An integrated complementary transistor circuit chip with polycrystalline contact to buried collector regions
GB1533156A (en) * 1975-02-08 1978-11-22 Sony Corp Semiconductor integrated circuits
EP0154682A1 (en) * 1983-11-18 1985-09-18 Motorola, Inc. Epitaxially isolated semiconductor device means and method

Also Published As

Publication number Publication date
SE8602088L (en) 1986-11-10
GB8611203D0 (en) 1986-06-18
JPS61260666A (en) 1986-11-18
SE8602088D0 (en) 1986-05-07
IT8520640A0 (en) 1985-05-09
FR2581796A1 (en) 1986-11-14
NL8601107A (en) 1986-12-01
GB2175138A (en) 1986-11-19
IT1218471B (en) 1990-04-19
FR2581796B1 (en) 1989-05-19

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20020508