GB8529382D0 - Integrated circuit transistor - Google Patents

Integrated circuit transistor

Info

Publication number
GB8529382D0
GB8529382D0 GB858529382A GB8529382A GB8529382D0 GB 8529382 D0 GB8529382 D0 GB 8529382D0 GB 858529382 A GB858529382 A GB 858529382A GB 8529382 A GB8529382 A GB 8529382A GB 8529382 D0 GB8529382 D0 GB 8529382D0
Authority
GB
United Kingdom
Prior art keywords
integrated circuit
circuit transistor
transistor
integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB858529382A
Other versions
GB2186423A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Co Ltd
Original Assignee
Plessey Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Co Ltd filed Critical Plessey Co Ltd
Priority to GB08529382A priority Critical patent/GB2186423A/en
Publication of GB8529382D0 publication Critical patent/GB8529382D0/en
Priority to EP19860906883 priority patent/EP0247119A1/en
Priority to PCT/GB1986/000708 priority patent/WO1987003425A1/en
Publication of GB2186423A publication Critical patent/GB2186423A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
GB08529382A 1985-11-29 1985-11-29 Integrated circuit transistor and method for producing same Withdrawn GB2186423A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB08529382A GB2186423A (en) 1985-11-29 1985-11-29 Integrated circuit transistor and method for producing same
EP19860906883 EP0247119A1 (en) 1985-11-29 1986-11-20 Transistor having silicide contacts and method for producing same
PCT/GB1986/000708 WO1987003425A1 (en) 1985-11-29 1986-11-20 Transistor having silicide contacts and method for producing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08529382A GB2186423A (en) 1985-11-29 1985-11-29 Integrated circuit transistor and method for producing same

Publications (2)

Publication Number Publication Date
GB8529382D0 true GB8529382D0 (en) 1986-01-08
GB2186423A GB2186423A (en) 1987-08-12

Family

ID=10588959

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08529382A Withdrawn GB2186423A (en) 1985-11-29 1985-11-29 Integrated circuit transistor and method for producing same

Country Status (3)

Country Link
EP (1) EP0247119A1 (en)
GB (1) GB2186423A (en)
WO (1) WO1987003425A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970701432A (en) * 1994-02-28 1997-03-17 존 엠. 클락3세 PROVIDING A LOW RESISTANCE TO INTEGRATED CIRCUIT DEVICES
DE19828846C2 (en) * 1998-06-27 2001-01-18 Micronas Gmbh Process for coating a substrate

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4228212A (en) * 1979-06-11 1980-10-14 General Electric Company Composite conductive structures in integrated circuits
US4301588A (en) * 1980-02-01 1981-11-24 International Business Machines Corporation Consumable amorphous or polysilicon emitter process
DE3218309A1 (en) * 1982-05-14 1983-11-17 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING INTEGRATED MOS FIELD EFFECT TRANSISTORS WITH AN ADDITIONAL CIRCUIT LEVEL, MADE OF METAL SILICIDES
US4665424A (en) * 1984-03-30 1987-05-12 Mitsubishi Denki Kabushiki Kaisha Semiconductor device

Also Published As

Publication number Publication date
WO1987003425A1 (en) 1987-06-04
EP0247119A1 (en) 1987-12-02
GB2186423A (en) 1987-08-12

Similar Documents

Publication Publication Date Title
EP0190027A3 (en) Semiconductor integrated circuit
EP0223526A3 (en) Optimized integrated circuits
EP0173945A3 (en) Integrated circuit device
DE3469245D1 (en) Integrated circuit fet structure
EP0215464A3 (en) Semiconductor integrated circuit device
GB2172143B (en) Semiconductor integrated circuit device
EP0211618A3 (en) Integrated circuit package
EP0228212A3 (en) Integrated circuit device
EP0192456A3 (en) Semiconductor integrated circuit
EP0194134A3 (en) Semiconductor integrated circuit device
EP0205936A3 (en) Semiconductor integrated circuit
EP0222369A3 (en) Gate circuit
GB8531025D0 (en) Bipolar transistor integrated circuit
EP0188378A3 (en) Semiconductor circuit device
EP0198646A3 (en) Integrated circuit device
GB8509720D0 (en) Integrated circuit
GB8511256D0 (en) Integrated circuits
GB8627557D0 (en) Integrated circuit device
HK20893A (en) Semiconducteur integrated circuit device
GB2180688B (en) Transistors
GB8604286D0 (en) Integrated circuits
GB8504726D0 (en) Integrated circuits
GB8611595D0 (en) Semiconductor integrated circuit device
GB8626530D0 (en) Semiconductor integrated circuit device
EP0225720A3 (en) Integrated circuit devices

Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)