IT1218471B - BIPOLAR INTEGRATED CIRCUIT INCLUDING VERTICAL PNP TRANSISTORS WITH COLLECTOR ON THE SUBSTRATE - Google Patents

BIPOLAR INTEGRATED CIRCUIT INCLUDING VERTICAL PNP TRANSISTORS WITH COLLECTOR ON THE SUBSTRATE

Info

Publication number
IT1218471B
IT1218471B IT20640/85A IT2064085A IT1218471B IT 1218471 B IT1218471 B IT 1218471B IT 20640/85 A IT20640/85 A IT 20640/85A IT 2064085 A IT2064085 A IT 2064085A IT 1218471 B IT1218471 B IT 1218471B
Authority
IT
Italy
Prior art keywords
collector
substrate
integrated circuit
circuit including
including vertical
Prior art date
Application number
IT20640/85A
Other languages
Italian (it)
Other versions
IT8520640A0 (en
Inventor
Mastromatteo Ubaldo
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Priority to IT20640/85A priority Critical patent/IT1218471B/en
Publication of IT8520640A0 publication Critical patent/IT8520640A0/en
Priority to NL8601107A priority patent/NL8601107A/en
Priority to SE8602088A priority patent/SE8602088L/en
Priority to FR868606607A priority patent/FR2581796B1/en
Priority to GB8611203A priority patent/GB2175138B/en
Priority to JP61105016A priority patent/JPS61260666A/en
Application granted granted Critical
Publication of IT1218471B publication Critical patent/IT1218471B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826Combination of vertical complementary transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/761PN junctions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222Bipolar technology
    • H01L21/8228Complementary devices, e.g. complementary transistors
    • H01L21/82285Complementary vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
IT20640/85A 1985-05-09 1985-05-09 BIPOLAR INTEGRATED CIRCUIT INCLUDING VERTICAL PNP TRANSISTORS WITH COLLECTOR ON THE SUBSTRATE IT1218471B (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT20640/85A IT1218471B (en) 1985-05-09 1985-05-09 BIPOLAR INTEGRATED CIRCUIT INCLUDING VERTICAL PNP TRANSISTORS WITH COLLECTOR ON THE SUBSTRATE
NL8601107A NL8601107A (en) 1985-05-09 1986-04-29 BIPOLAR INTEGRATED CIRCUIT CONTAINING VERTICAL P-N-P TRANSISTORS WITH THEIR COLLECTORS ON THE SUBSTRATE.
SE8602088A SE8602088L (en) 1985-05-09 1986-05-07 BIPOLER INTEGRATED CIRCUIT, INCLUDING VERTICAL PNP TRANSISTORS, HAVING ITS COLLECTORS ON THE SUBSTRATE
FR868606607A FR2581796B1 (en) 1985-05-09 1986-05-07 BIPOLAR INTEGRATED CIRCUIT COMPRISING VERTICAL PNP TRANSISTORS WITH COLLECTOR ON THE SUBSTRATE, AND METHOD FOR PRODUCING SUCH A CIRCUIT
GB8611203A GB2175138B (en) 1985-05-09 1986-05-08 Bipolar integrated circuits
JP61105016A JPS61260666A (en) 1985-05-09 1986-05-09 Bipolar integrated circuit and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT20640/85A IT1218471B (en) 1985-05-09 1985-05-09 BIPOLAR INTEGRATED CIRCUIT INCLUDING VERTICAL PNP TRANSISTORS WITH COLLECTOR ON THE SUBSTRATE

Publications (2)

Publication Number Publication Date
IT8520640A0 IT8520640A0 (en) 1985-05-09
IT1218471B true IT1218471B (en) 1990-04-19

Family

ID=11169918

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20640/85A IT1218471B (en) 1985-05-09 1985-05-09 BIPOLAR INTEGRATED CIRCUIT INCLUDING VERTICAL PNP TRANSISTORS WITH COLLECTOR ON THE SUBSTRATE

Country Status (6)

Country Link
JP (1) JPS61260666A (en)
FR (1) FR2581796B1 (en)
GB (1) GB2175138B (en)
IT (1) IT1218471B (en)
NL (1) NL8601107A (en)
SE (1) SE8602088L (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4951115A (en) * 1989-03-06 1990-08-21 International Business Machines Corp. Complementary transistor structure and method for manufacture
JP2835116B2 (en) * 1989-09-29 1998-12-14 株式会社東芝 Power IC and method of manufacturing the same
EP0915508A1 (en) * 1997-10-10 1999-05-12 STMicroelectronics S.r.l. Integrated circuit with highly efficient junction insulation
DE19805786A1 (en) * 1998-02-12 1999-08-26 Siemens Ag Semiconductor component with structure to avoid cross currents
GB2367187B (en) * 2000-09-21 2002-11-13 Bookham Technology Plc An isolation device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648128A (en) * 1968-05-25 1972-03-07 Sony Corp An integrated complementary transistor circuit chip with polycrystalline contact to buried collector regions
JPS5942463B2 (en) * 1972-09-22 1984-10-15 ソニー株式会社 Semiconductor integrated circuit device
JPS5914897B2 (en) * 1975-02-08 1984-04-06 ソニー株式会社 semiconductor equipment
JPS5710964A (en) * 1980-06-25 1982-01-20 Fujitsu Ltd Manufacture of semiconductor device
US4609413A (en) * 1983-11-18 1986-09-02 Motorola, Inc. Method for manufacturing and epitaxially isolated semiconductor utilizing etch and refill technique

Also Published As

Publication number Publication date
FR2581796A1 (en) 1986-11-14
GB2175138B (en) 1989-04-19
IT8520640A0 (en) 1985-05-09
NL8601107A (en) 1986-12-01
SE8602088D0 (en) 1986-05-07
JPS61260666A (en) 1986-11-18
GB8611203D0 (en) 1986-06-18
FR2581796B1 (en) 1989-05-19
SE8602088L (en) 1986-11-10
GB2175138A (en) 1986-11-19

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970530