JPS5147583B2 - - Google Patents
Info
- Publication number
- JPS5147583B2 JPS5147583B2 JP48000550A JP55073A JPS5147583B2 JP S5147583 B2 JPS5147583 B2 JP S5147583B2 JP 48000550 A JP48000550 A JP 48000550A JP 55073 A JP55073 A JP 55073A JP S5147583 B2 JPS5147583 B2 JP S5147583B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0761—Vertical bipolar transistor in combination with diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0839—Cathode regions of thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (19)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP48000550A JPS5147583B2 (it) | 1972-12-29 | 1972-12-29 | |
| AU63789/73A AU483398B2 (en) | 1972-12-29 | 1973-12-19 | Semiconductor device |
| GB5909373A GB1460037A (en) | 1972-12-29 | 1973-12-20 | Semiconductor devices |
| DK701973A DK140036C (da) | 1972-12-29 | 1973-12-21 | Halvlederelement |
| AT1083973A AT376844B (de) | 1972-12-29 | 1973-12-27 | Halbleiterbauteil |
| DE19732364752 DE2364752A1 (de) | 1972-12-29 | 1973-12-27 | Halbleitervorrichtung |
| CH1814173A CH577750A5 (it) | 1972-12-29 | 1973-12-27 | |
| IT3232473A IT1002384B (it) | 1972-12-29 | 1973-12-27 | Dispositivo semiconduttore |
| BE2053325A BE809216A (fr) | 1972-12-29 | 1973-12-28 | Dispositif semi-conducteur |
| SE7317518A SE398940B (sv) | 1972-12-29 | 1973-12-28 | Halvledardon |
| ES421881A ES421881A1 (es) | 1972-12-29 | 1973-12-28 | Dispositivo semiconductor de varias uniones. |
| CA189,167A CA993568A (en) | 1972-12-29 | 1973-12-28 | Semiconductor device |
| FR7347090A FR2212645B1 (it) | 1972-12-29 | 1973-12-28 | |
| NL7317815A NL7317815A (it) | 1972-12-29 | 1973-12-28 | |
| BR1027573A BR7310275D0 (pt) | 1972-12-29 | 1973-12-28 | Aperfeicoamento em dispositivo semicondutor de juncoes multiplas |
| NO498073A NO140844C (no) | 1972-12-29 | 1973-12-28 | Halvlederanordning. |
| US05/561,914 US4007474A (en) | 1972-12-29 | 1975-03-25 | Transistor having an emitter with a low impurity concentration portion and a high impurity concentration portion |
| US05/651,161 US4027324A (en) | 1972-12-29 | 1976-01-21 | Bidirectional transistor |
| US05/654,758 US4038680A (en) | 1972-12-29 | 1976-02-03 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP48000550A JPS5147583B2 (it) | 1972-12-29 | 1972-12-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4991191A JPS4991191A (it) | 1974-08-30 |
| JPS5147583B2 true JPS5147583B2 (it) | 1976-12-15 |
Family
ID=11476818
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP48000550A Expired JPS5147583B2 (it) | 1972-12-29 | 1972-12-29 |
Country Status (15)
| Country | Link |
|---|---|
| JP (1) | JPS5147583B2 (it) |
| AT (1) | AT376844B (it) |
| BE (1) | BE809216A (it) |
| BR (1) | BR7310275D0 (it) |
| CA (1) | CA993568A (it) |
| CH (1) | CH577750A5 (it) |
| DE (1) | DE2364752A1 (it) |
| DK (1) | DK140036C (it) |
| ES (1) | ES421881A1 (it) |
| FR (1) | FR2212645B1 (it) |
| GB (1) | GB1460037A (it) |
| IT (1) | IT1002384B (it) |
| NL (1) | NL7317815A (it) |
| NO (1) | NO140844C (it) |
| SE (1) | SE398940B (it) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5914897B2 (ja) * | 1975-02-08 | 1984-04-06 | ソニー株式会社 | 半導体装置 |
| AT377645B (de) * | 1972-12-29 | 1985-04-10 | Sony Corp | Halbleiterbauteil |
| JPS5754969B2 (it) * | 1974-04-04 | 1982-11-20 | ||
| JPS5753672B2 (it) * | 1974-04-10 | 1982-11-13 | ||
| JPS57658B2 (it) * | 1974-04-16 | 1982-01-07 | ||
| JPS5714064B2 (it) * | 1974-04-25 | 1982-03-20 | ||
| JPS5718710B2 (it) * | 1974-05-10 | 1982-04-17 | ||
| JPS5648983B2 (it) * | 1974-05-10 | 1981-11-19 | ||
| JPS5426789Y2 (it) * | 1974-07-23 | 1979-09-03 | ||
| IT1061510B (it) * | 1975-06-30 | 1983-04-30 | Rca Corp | Transistore bipolare presentante un emettitore con una elevata bassa concentrazione di impurezze e metodo di fabbricazione dello stesso |
| JPS52100978A (en) * | 1976-02-20 | 1977-08-24 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
| JPS5565460A (en) * | 1978-11-09 | 1980-05-16 | Ibm | Method of manufacturing semiconductor device improved in current gain |
| JPS5946103B2 (ja) * | 1980-03-10 | 1984-11-10 | 日本電信電話株式会社 | トランジスタ |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE547227A (it) * | 1955-04-21 | |||
| US3343048A (en) * | 1964-02-20 | 1967-09-19 | Westinghouse Electric Corp | Four layer semiconductor switching devices having a shorted emitter and method of making the same |
| DE1221363B (de) * | 1964-04-25 | 1966-07-21 | Telefunken Patent | Verfahren zum Verringern des Bahnwiderstands von Halbleiterbauelementen |
| DE1297237B (de) * | 1964-09-18 | 1969-06-12 | Itt Ind Gmbh Deutsche | Flaechentransistor und Verfahren zu seiner Herstellung |
| US3500141A (en) * | 1964-10-13 | 1970-03-10 | Ibm | Transistor structure |
| GB1160429A (en) * | 1965-10-14 | 1969-08-06 | Philco Ford Corp | Improvements in and relating to Semiconductive Devices. |
| US3469117A (en) * | 1966-01-08 | 1969-09-23 | Nippon Telegraph & Telephone | Electric circuit employing semiconductor devices |
| US3432920A (en) * | 1966-12-01 | 1969-03-18 | Rca Corp | Semiconductor devices and methods of making them |
| US3512056A (en) * | 1967-04-25 | 1970-05-12 | Westinghouse Electric Corp | Double epitaxial layer high power,high speed transistor |
| FR1574577A (it) * | 1967-08-03 | 1969-07-11 | ||
| US3504242A (en) * | 1967-08-11 | 1970-03-31 | Westinghouse Electric Corp | Switching power transistor with thyristor overload capacity |
| US3538401A (en) * | 1968-04-11 | 1970-11-03 | Westinghouse Electric Corp | Drift field thyristor |
| US3544863A (en) * | 1968-10-29 | 1970-12-01 | Motorola Inc | Monolithic integrated circuit substructure with epitaxial decoupling capacitance |
| US3591430A (en) * | 1968-11-14 | 1971-07-06 | Philco Ford Corp | Method for fabricating bipolar planar transistor having reduced minority carrier fringing |
| JPS4840667B1 (it) * | 1969-03-28 | 1973-12-01 | ||
| US3717515A (en) * | 1969-11-10 | 1973-02-20 | Ibm | Process for fabricating a pedestal transistor |
| DE2060854A1 (de) * | 1970-12-10 | 1972-08-17 | Siemens Ag | Halbleiterbauelement mit drei Zonen abwechselnden Leitfaehigkeitstyps und Anordnung zu seiner Ansteuerung |
| DE2211384A1 (de) * | 1971-03-20 | 1972-11-30 | Philips Nv | Schaltungsanordnung mit mindestens einem strahlungsgespeisten Schaltungselement und Halbleiteranordnung zur Anwendung in einer derartigen Schaltungsanordnung |
| JPS493583A (it) * | 1972-04-20 | 1974-01-12 |
-
1972
- 1972-12-29 JP JP48000550A patent/JPS5147583B2/ja not_active Expired
-
1973
- 1973-12-20 GB GB5909373A patent/GB1460037A/en not_active Expired
- 1973-12-21 DK DK701973A patent/DK140036C/da not_active IP Right Cessation
- 1973-12-27 AT AT1083973A patent/AT376844B/de not_active IP Right Cessation
- 1973-12-27 CH CH1814173A patent/CH577750A5/de not_active IP Right Cessation
- 1973-12-27 IT IT3232473A patent/IT1002384B/it active
- 1973-12-27 DE DE19732364752 patent/DE2364752A1/de not_active Ceased
- 1973-12-28 BR BR1027573A patent/BR7310275D0/pt unknown
- 1973-12-28 CA CA189,167A patent/CA993568A/en not_active Expired
- 1973-12-28 NL NL7317815A patent/NL7317815A/xx unknown
- 1973-12-28 BE BE2053325A patent/BE809216A/xx not_active IP Right Cessation
- 1973-12-28 FR FR7347090A patent/FR2212645B1/fr not_active Expired
- 1973-12-28 ES ES421881A patent/ES421881A1/es not_active Expired
- 1973-12-28 SE SE7317518A patent/SE398940B/xx unknown
- 1973-12-28 NO NO498073A patent/NO140844C/no unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NO140844B (no) | 1979-08-13 |
| SE398940B (sv) | 1978-01-23 |
| NO140844C (no) | 1979-11-21 |
| DK140036C (da) | 1979-12-24 |
| JPS4991191A (it) | 1974-08-30 |
| NL7317815A (it) | 1974-07-02 |
| AT376844B (de) | 1985-01-10 |
| BE809216A (fr) | 1974-04-16 |
| FR2212645A1 (it) | 1974-07-26 |
| FR2212645B1 (it) | 1977-08-05 |
| CA993568A (en) | 1976-07-20 |
| DK140036B (da) | 1979-06-05 |
| ATA1083973A (de) | 1984-05-15 |
| BR7310275D0 (pt) | 1974-09-24 |
| IT1002384B (it) | 1976-05-20 |
| AU6378973A (en) | 1975-06-19 |
| DE2364752A1 (de) | 1974-08-01 |
| GB1460037A (en) | 1976-12-31 |
| CH577750A5 (it) | 1976-07-15 |
| ES421881A1 (es) | 1976-08-01 |