IT1061510B - Transistore bipolare presentante un emettitore con una elevata bassa concentrazione di impurezze e metodo di fabbricazione dello stesso - Google Patents

Transistore bipolare presentante un emettitore con una elevata bassa concentrazione di impurezze e metodo di fabbricazione dello stesso

Info

Publication number
IT1061510B
IT1061510B IT23368/76A IT2336876A IT1061510B IT 1061510 B IT1061510 B IT 1061510B IT 23368/76 A IT23368/76 A IT 23368/76A IT 2336876 A IT2336876 A IT 2336876A IT 1061510 B IT1061510 B IT 1061510B
Authority
IT
Italy
Prior art keywords
emitter
impurities
manufacturing
bipolar transistor
low concentration
Prior art date
Application number
IT23368/76A
Other languages
English (en)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Application granted granted Critical
Publication of IT1061510B publication Critical patent/IT1061510B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
    • H01L21/2253—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase by ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
IT23368/76A 1975-06-30 1976-05-18 Transistore bipolare presentante un emettitore con una elevata bassa concentrazione di impurezze e metodo di fabbricazione dello stesso IT1061510B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US59195575A 1975-06-30 1975-06-30

Publications (1)

Publication Number Publication Date
IT1061510B true IT1061510B (it) 1983-04-30

Family

ID=24368653

Family Applications (1)

Application Number Title Priority Date Filing Date
IT23368/76A IT1061510B (it) 1975-06-30 1976-05-18 Transistore bipolare presentante un emettitore con una elevata bassa concentrazione di impurezze e metodo di fabbricazione dello stesso

Country Status (7)

Country Link
US (1) US4136353A (it)
JP (1) JPS526472A (it)
DE (1) DE2627922A1 (it)
FR (1) FR2316744A1 (it)
GB (1) GB1523012A (it)
IT (1) IT1061510B (it)
SE (1) SE7606293L (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5691478A (en) * 1979-12-26 1981-07-24 Hitachi Ltd Manufacture of punch-through type diode
DE3039330A1 (de) * 1980-10-17 1982-05-19 Bosch-Siemens Hausgeräte GmbH, 7000 Stuttgart Schaltbaugruppe fuer hausgeraete mit elektrischer und/oder elektronischer steuerung
US4750025A (en) * 1981-12-04 1988-06-07 American Telephone And Telegraph Company, At&T Bell Laboratories Depletion stop transistor
US4951115A (en) * 1989-03-06 1990-08-21 International Business Machines Corp. Complementary transistor structure and method for manufacture
DE59209867D1 (de) * 1991-04-16 2000-11-02 Siemens Ag Freilauf-Transistorschaltung
DE19520182C2 (de) * 1995-06-01 2003-06-18 Infineon Technologies Ag Bipolartransistor vom pnp-Typ

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1355806A (en) * 1970-12-09 1974-06-05 Mullard Ltd Methods of manufacturing a semiconductor device
US4049478A (en) * 1971-05-12 1977-09-20 Ibm Corporation Utilization of an arsenic diffused emitter in the fabrication of a high performance semiconductor device
JPS5145103B2 (it) * 1972-08-24 1976-12-02
JPS5147583B2 (it) * 1972-12-29 1976-12-15
US3943554A (en) * 1973-07-30 1976-03-09 Signetics Corporation Threshold switching integrated circuit and method for forming the same
JPS5616553B2 (it) * 1973-11-19 1981-04-16
US4039857A (en) * 1974-04-24 1977-08-02 Rca Corporation Dynamic biasing of isolation boat including diffused resistors

Also Published As

Publication number Publication date
GB1523012A (en) 1978-08-31
JPS526472A (en) 1977-01-18
SE7606293L (sv) 1976-12-31
US4136353A (en) 1979-01-23
DE2627922A1 (de) 1977-01-27
FR2316744A1 (fr) 1977-01-28

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