IT8021995A0 - Processo di fabbricazione di transistori bipolari con un emettitore impiantato con ioni. - Google Patents

Processo di fabbricazione di transistori bipolari con un emettitore impiantato con ioni.

Info

Publication number
IT8021995A0
IT8021995A0 IT8021995A IT2199580A IT8021995A0 IT 8021995 A0 IT8021995 A0 IT 8021995A0 IT 8021995 A IT8021995 A IT 8021995A IT 2199580 A IT2199580 A IT 2199580A IT 8021995 A0 IT8021995 A0 IT 8021995A0
Authority
IT
Italy
Prior art keywords
bipolar transistors
ion implanted
manufacturing bipolar
implanted emitter
emitter
Prior art date
Application number
IT8021995A
Other languages
English (en)
Other versions
IT1149957B (it
Inventor
Barile Conrad Albert
Goth George Richard
Makris James Steve
Nagarajan Arunachala
Raheja Raj Kanwal
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of IT8021995A0 publication Critical patent/IT8021995A0/it
Application granted granted Critical
Publication of IT1149957B publication Critical patent/IT1149957B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/139—Schottky barrier
IT21995/80A 1979-06-22 1980-05-13 Processo di fabbricazione di transistori bipolari con un emettitire impianto con ioni IT1149957B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/051,078 US4243435A (en) 1979-06-22 1979-06-22 Bipolar transistor fabrication process with an ion implanted emitter

Publications (2)

Publication Number Publication Date
IT8021995A0 true IT8021995A0 (it) 1980-05-13
IT1149957B IT1149957B (it) 1986-12-10

Family

ID=21969190

Family Applications (1)

Application Number Title Priority Date Filing Date
IT21995/80A IT1149957B (it) 1979-06-22 1980-05-13 Processo di fabbricazione di transistori bipolari con un emettitire impianto con ioni

Country Status (6)

Country Link
US (1) US4243435A (it)
EP (1) EP0020998B1 (it)
JP (1) JPS564268A (it)
CA (1) CA1139015A (it)
DE (1) DE3062705D1 (it)
IT (1) IT1149957B (it)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4452645A (en) * 1979-11-13 1984-06-05 International Business Machines Corporation Method of making emitter regions by implantation through a non-monocrystalline layer
JPS5758356A (en) * 1980-09-26 1982-04-08 Toshiba Corp Manufacture of semiconductor device
JPS57162460A (en) * 1981-03-31 1982-10-06 Fujitsu Ltd Manufacture of semiconductor device
US4372033A (en) * 1981-09-08 1983-02-08 Ncr Corporation Method of making coplanar MOS IC structures
JPS5975659A (ja) * 1982-10-22 1984-04-28 Fujitsu Ltd 半導体装置の製造方法
JPS59124141A (ja) * 1982-12-28 1984-07-18 Toshiba Corp 半導体装置の製造方法
JP2501317B2 (ja) * 1985-04-11 1996-05-29 ローム 株式会社 半導体装置の製造方法
JPH0638422B2 (ja) * 1985-04-11 1994-05-18 ロ−ム株式会社 半導体装置の製造方法
JPH0719838B2 (ja) * 1985-07-19 1995-03-06 松下電器産業株式会社 半導体装置およびその製造方法
US4829025A (en) * 1987-10-02 1989-05-09 Advanced Micro Devices, Inc. Process for patterning films in manufacture of integrated circuit structures
JPH0621368Y2 (ja) * 1988-12-13 1994-06-08 九州日立マクセル株式会社 整髪美容器
US5118634A (en) * 1990-09-26 1992-06-02 Purdue Research Foundation Self-aligned integrated circuit bipolar transistor having monocrystalline contacts
US5364801A (en) * 1990-12-17 1994-11-15 Texas Instruments Incorporated Method of forming a charge pump circuit
JPH0720974U (ja) * 1991-04-23 1995-04-18 株式会社徳安 耳掻き
US5880036A (en) * 1992-06-15 1999-03-09 Micron Technology, Inc. Method for enhancing oxide to nitride selectivity through the use of independent heat control
US5651855A (en) * 1992-07-28 1997-07-29 Micron Technology, Inc. Method of making self aligned contacts to silicon substrates during the manufacture of integrated circuits
JP2666233B2 (ja) * 1992-12-25 1997-10-22 鐘紡株式会社 スポンジ状こんにゃく成形体
US6835634B1 (en) 1995-08-25 2004-12-28 Micron Technology, Inc. Streamlined field isolation process
US5920782A (en) * 1997-07-18 1999-07-06 United Microelectronics Corp. Method for improving hot carrier degradation
US6337260B1 (en) 1999-09-24 2002-01-08 Advanced Micro Devices, Inc. Use of knocked-on oxygen atoms for reduction of transient enhanced diffusion
JP5171232B2 (ja) * 2006-12-15 2013-03-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7691734B2 (en) * 2007-03-01 2010-04-06 International Business Machines Corporation Deep trench based far subcollector reachthrough
CN206098394U (zh) * 2016-10-14 2017-04-12 京东方科技集团股份有限公司 一种显示基板、显示面板及显示装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USB422695I5 (it) * 1964-12-31 1900-01-01
US3474021A (en) * 1966-01-12 1969-10-21 Ibm Method of forming openings using sequential sputtering and chemical etching
FR1544067A (fr) * 1966-12-01 1968-10-31 Rca Corp Dispositifs semi-conducteurs perfectionnés et procédé pour leur fabrication
US3604986A (en) * 1970-03-17 1971-09-14 Bell Telephone Labor Inc High frequency transistors with shallow emitters
DE2157633C3 (de) * 1971-11-20 1980-01-24 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zum Herstellen von Zonen einer monolithisch integrierten Festkörperschaltung
CA998778A (en) * 1972-07-13 1976-10-19 Martin M. Skowron Semiconductor manufacturing process
US3928081A (en) * 1973-10-26 1975-12-23 Signetics Corp Method for fabricating semiconductor devices using composite mask and ion implantation
US3928082A (en) * 1973-12-28 1975-12-23 Texas Instruments Inc Self-aligned transistor process
US3933528A (en) * 1974-07-02 1976-01-20 Texas Instruments Incorporated Process for fabricating integrated circuits utilizing ion implantation
US3945856A (en) * 1974-07-15 1976-03-23 Ibm Corporation Method of ion implantation through an electrically insulative material
JPS51144184A (en) * 1975-06-05 1976-12-10 Mitsubishi Electric Corp Production method of semiconductor unit
US4018627A (en) * 1975-09-22 1977-04-19 Signetics Corporation Method for fabricating semiconductor devices utilizing oxide protective layer
FR2341943A1 (fr) * 1976-02-20 1977-09-16 Radiotechnique Compelec Procede de realisation de transistors par implantation ionique
US4046606A (en) * 1976-05-10 1977-09-06 Rca Corporation Simultaneous location of areas having different conductivities
US4110125A (en) * 1977-03-03 1978-08-29 International Business Machines Corporation Method for fabricating semiconductor devices
US4131497A (en) * 1977-07-12 1978-12-26 International Business Machines Corporation Method of manufacturing self-aligned semiconductor devices
US4135954A (en) * 1977-07-12 1979-01-23 International Business Machines Corporation Method for fabricating self-aligned semiconductor devices utilizing selectively etchable masking layers
US4118250A (en) * 1977-12-30 1978-10-03 International Business Machines Corporation Process for producing integrated circuit devices by ion implantation

Also Published As

Publication number Publication date
JPS564268A (en) 1981-01-17
DE3062705D1 (en) 1983-05-19
EP0020998A1 (de) 1981-01-07
IT1149957B (it) 1986-12-10
EP0020998B1 (de) 1983-04-13
US4243435A (en) 1981-01-06
CA1139015A (en) 1983-01-04

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