ES421881A1 - Dispositivo semiconductor de varias uniones. - Google Patents
Dispositivo semiconductor de varias uniones.Info
- Publication number
- ES421881A1 ES421881A1 ES421881A ES421881A ES421881A1 ES 421881 A1 ES421881 A1 ES 421881A1 ES 421881 A ES421881 A ES 421881A ES 421881 A ES421881 A ES 421881A ES 421881 A1 ES421881 A1 ES 421881A1
- Authority
- ES
- Spain
- Prior art keywords
- region
- semi
- emitter
- conductive
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000012535 impurity Substances 0.000 abstract 5
- 238000000926 separation method Methods 0.000 abstract 3
- 239000000969 carrier Substances 0.000 abstract 2
- 230000004888 barrier function Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0761—Vertical bipolar transistor in combination with diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0839—Cathode regions of thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP48000550A JPS5147583B2 (es) | 1972-12-29 | 1972-12-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES421881A1 true ES421881A1 (es) | 1976-08-01 |
Family
ID=11476818
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES421881A Expired ES421881A1 (es) | 1972-12-29 | 1973-12-28 | Dispositivo semiconductor de varias uniones. |
Country Status (15)
| Country | Link |
|---|---|
| JP (1) | JPS5147583B2 (es) |
| AT (1) | AT376844B (es) |
| BE (1) | BE809216A (es) |
| BR (1) | BR7310275D0 (es) |
| CA (1) | CA993568A (es) |
| CH (1) | CH577750A5 (es) |
| DE (1) | DE2364752A1 (es) |
| DK (1) | DK140036C (es) |
| ES (1) | ES421881A1 (es) |
| FR (1) | FR2212645B1 (es) |
| GB (1) | GB1460037A (es) |
| IT (1) | IT1002384B (es) |
| NL (1) | NL7317815A (es) |
| NO (1) | NO140844C (es) |
| SE (1) | SE398940B (es) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT377645B (de) * | 1972-12-29 | 1985-04-10 | Sony Corp | Halbleiterbauteil |
| JPS5914897B2 (ja) * | 1975-02-08 | 1984-04-06 | ソニー株式会社 | 半導体装置 |
| JPS5754969B2 (es) * | 1974-04-04 | 1982-11-20 | ||
| JPS5753672B2 (es) * | 1974-04-10 | 1982-11-13 | ||
| JPS57658B2 (es) * | 1974-04-16 | 1982-01-07 | ||
| JPS5714064B2 (es) * | 1974-04-25 | 1982-03-20 | ||
| JPS5718710B2 (es) * | 1974-05-10 | 1982-04-17 | ||
| JPS5648983B2 (es) * | 1974-05-10 | 1981-11-19 | ||
| JPS5426789Y2 (es) * | 1974-07-23 | 1979-09-03 | ||
| IT1061510B (it) * | 1975-06-30 | 1983-04-30 | Rca Corp | Transistore bipolare presentante un emettitore con una elevata bassa concentrazione di impurezze e metodo di fabbricazione dello stesso |
| JPS52100978A (en) * | 1976-02-20 | 1977-08-24 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device |
| JPS5565460A (en) * | 1978-11-09 | 1980-05-16 | Ibm | Method of manufacturing semiconductor device improved in current gain |
| JPS5946103B2 (ja) * | 1980-03-10 | 1984-11-10 | 日本電信電話株式会社 | トランジスタ |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE547227A (es) * | 1955-04-21 | |||
| US3343048A (en) * | 1964-02-20 | 1967-09-19 | Westinghouse Electric Corp | Four layer semiconductor switching devices having a shorted emitter and method of making the same |
| DE1221363B (de) * | 1964-04-25 | 1966-07-21 | Telefunken Patent | Verfahren zum Verringern des Bahnwiderstands von Halbleiterbauelementen |
| DE1297237B (de) * | 1964-09-18 | 1969-06-12 | Itt Ind Gmbh Deutsche | Flaechentransistor und Verfahren zu seiner Herstellung |
| US3500141A (en) * | 1964-10-13 | 1970-03-10 | Ibm | Transistor structure |
| GB1160429A (en) * | 1965-10-14 | 1969-08-06 | Philco Ford Corp | Improvements in and relating to Semiconductive Devices. |
| US3469117A (en) * | 1966-01-08 | 1969-09-23 | Nippon Telegraph & Telephone | Electric circuit employing semiconductor devices |
| US3432920A (en) * | 1966-12-01 | 1969-03-18 | Rca Corp | Semiconductor devices and methods of making them |
| US3512056A (en) * | 1967-04-25 | 1970-05-12 | Westinghouse Electric Corp | Double epitaxial layer high power,high speed transistor |
| FR1574577A (es) * | 1967-08-03 | 1969-07-11 | ||
| US3504242A (en) * | 1967-08-11 | 1970-03-31 | Westinghouse Electric Corp | Switching power transistor with thyristor overload capacity |
| US3538401A (en) * | 1968-04-11 | 1970-11-03 | Westinghouse Electric Corp | Drift field thyristor |
| US3544863A (en) * | 1968-10-29 | 1970-12-01 | Motorola Inc | Monolithic integrated circuit substructure with epitaxial decoupling capacitance |
| US3591430A (en) * | 1968-11-14 | 1971-07-06 | Philco Ford Corp | Method for fabricating bipolar planar transistor having reduced minority carrier fringing |
| JPS4840667B1 (es) * | 1969-03-28 | 1973-12-01 | ||
| US3717515A (en) * | 1969-11-10 | 1973-02-20 | Ibm | Process for fabricating a pedestal transistor |
| DE2060854A1 (de) * | 1970-12-10 | 1972-08-17 | Siemens Ag | Halbleiterbauelement mit drei Zonen abwechselnden Leitfaehigkeitstyps und Anordnung zu seiner Ansteuerung |
| DE2211384A1 (de) * | 1971-03-20 | 1972-11-30 | Philips Nv | Schaltungsanordnung mit mindestens einem strahlungsgespeisten Schaltungselement und Halbleiteranordnung zur Anwendung in einer derartigen Schaltungsanordnung |
| JPS493583A (es) * | 1972-04-20 | 1974-01-12 |
-
1972
- 1972-12-29 JP JP48000550A patent/JPS5147583B2/ja not_active Expired
-
1973
- 1973-12-20 GB GB5909373A patent/GB1460037A/en not_active Expired
- 1973-12-21 DK DK701973A patent/DK140036C/da not_active IP Right Cessation
- 1973-12-27 CH CH1814173A patent/CH577750A5/de not_active IP Right Cessation
- 1973-12-27 DE DE19732364752 patent/DE2364752A1/de not_active Ceased
- 1973-12-27 AT AT1083973A patent/AT376844B/de not_active IP Right Cessation
- 1973-12-27 IT IT3232473A patent/IT1002384B/it active
- 1973-12-28 BR BR1027573A patent/BR7310275D0/pt unknown
- 1973-12-28 CA CA189,167A patent/CA993568A/en not_active Expired
- 1973-12-28 SE SE7317518A patent/SE398940B/xx unknown
- 1973-12-28 NO NO498073A patent/NO140844C/no unknown
- 1973-12-28 ES ES421881A patent/ES421881A1/es not_active Expired
- 1973-12-28 BE BE2053325A patent/BE809216A/xx not_active IP Right Cessation
- 1973-12-28 FR FR7347090A patent/FR2212645B1/fr not_active Expired
- 1973-12-28 NL NL7317815A patent/NL7317815A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CH577750A5 (es) | 1976-07-15 |
| BR7310275D0 (pt) | 1974-09-24 |
| JPS5147583B2 (es) | 1976-12-15 |
| NO140844C (no) | 1979-11-21 |
| DK140036C (da) | 1979-12-24 |
| DE2364752A1 (de) | 1974-08-01 |
| NO140844B (no) | 1979-08-13 |
| JPS4991191A (es) | 1974-08-30 |
| BE809216A (fr) | 1974-04-16 |
| CA993568A (en) | 1976-07-20 |
| AU6378973A (en) | 1975-06-19 |
| SE398940B (sv) | 1978-01-23 |
| FR2212645B1 (es) | 1977-08-05 |
| ATA1083973A (de) | 1984-05-15 |
| NL7317815A (es) | 1974-07-02 |
| FR2212645A1 (es) | 1974-07-26 |
| IT1002384B (it) | 1976-05-20 |
| AT376844B (de) | 1985-01-10 |
| DK140036B (da) | 1979-06-05 |
| GB1460037A (en) | 1976-12-31 |
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