GB1160429A - Improvements in and relating to Semiconductive Devices. - Google Patents

Improvements in and relating to Semiconductive Devices.

Info

Publication number
GB1160429A
GB1160429A GB4580066A GB4580066A GB1160429A GB 1160429 A GB1160429 A GB 1160429A GB 4580066 A GB4580066 A GB 4580066A GB 4580066 A GB4580066 A GB 4580066A GB 1160429 A GB1160429 A GB 1160429A
Authority
GB
United Kingdom
Prior art keywords
layer
deposited
base region
frame
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4580066A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Space Systems Loral LLC
Original Assignee
Philco Ford Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philco Ford Corp filed Critical Philco Ford Corp
Publication of GB1160429A publication Critical patent/GB1160429A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)

Abstract

1,160,429. Semi-conductor devices. PHILCO-FORD CORP. 13 Oct., 1966 [14 Oct., 1965], No. 45800/66. Heading H1K. The base region of a transistor is formed by the redistribution of impurities pre-deposited on a P-type body 12<SP>1</SP> into a layer 30 of N-type material substantially formed over the deposits. The base region comprises an active part 20 and a frame-shaped peripheral part 22, extending respectively partly and fully through the layer 30. In the embodiment described the collector region of a silicon transistor comprises a high resistivity P-type layer 12<SP>1</SP> epitaxially deposited on a low resistivity P-type substrate 10. A rectangular frame-shaped layer of phosphorus is deposited on the surface of the epitaxial layer 12<SP>1</SP>, and a less concentrated layer 20 of antimony is deposited to cover the centre of the frame, and to overlap slightly into the frame. A further epitaxial layer 26, 30 of high resistivity P-type silicon is then deposited on the layer 12<SP>1</SP>, and during a subsequent heating step the faster diffusing phosphorus diffuses through the layer 26, 30 to the upper surface thereof, to form a peripheral base region 22 isolating an emitter region 26. The base region 22 also diffuses down into the layer 12<SP>1</SP>. A low resistivity emitter portion 24 may be formed by a further boron-diffusion step. Suitable oxide masking is used during the manufacture. The process may also be applied to manufacture of an NPN transistor, which may form part of a microcircuit within a single wafer.
GB4580066A 1965-10-14 1966-10-13 Improvements in and relating to Semiconductive Devices. Expired GB1160429A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US49592765A 1965-10-14 1965-10-14

Publications (1)

Publication Number Publication Date
GB1160429A true GB1160429A (en) 1969-08-06

Family

ID=23970537

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4580066A Expired GB1160429A (en) 1965-10-14 1966-10-13 Improvements in and relating to Semiconductive Devices.

Country Status (2)

Country Link
DE (1) DE1564509A1 (en)
GB (1) GB1160429A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT376844B (en) * 1972-12-29 1985-01-10 Sony Corp SEMICONDUCTOR COMPONENT
AT377645B (en) * 1972-12-29 1985-04-10 Sony Corp SEMICONDUCTOR COMPONENT

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT376844B (en) * 1972-12-29 1985-01-10 Sony Corp SEMICONDUCTOR COMPONENT
AT377645B (en) * 1972-12-29 1985-04-10 Sony Corp SEMICONDUCTOR COMPONENT

Also Published As

Publication number Publication date
DE1564509A1 (en) 1970-03-05

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees