AT376844B - SEMICONDUCTOR COMPONENT - Google Patents

SEMICONDUCTOR COMPONENT

Info

Publication number
AT376844B
AT376844B AT1083973A AT1083973A AT376844B AT 376844 B AT376844 B AT 376844B AT 1083973 A AT1083973 A AT 1083973A AT 1083973 A AT1083973 A AT 1083973A AT 376844 B AT376844 B AT 376844B
Authority
AT
Austria
Prior art keywords
semiconductor component
semiconductor
component
Prior art date
Application number
AT1083973A
Other languages
German (de)
Other versions
ATA1083973A (en
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of ATA1083973A publication Critical patent/ATA1083973A/en
Application granted granted Critical
Publication of AT376844B publication Critical patent/AT376844B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222Bipolar technology
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761Vertical bipolar transistor in combination with diodes only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826Combination of vertical complementary transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804Emitter regions of bipolar transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083Anode or cathode regions of thyristors or gated bipolar-mode devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839Cathode regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
AT1083973A 1972-12-29 1973-12-27 SEMICONDUCTOR COMPONENT AT376844B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48000550A JPS5147583B2 (en) 1972-12-29 1972-12-29

Publications (2)

Publication Number Publication Date
ATA1083973A ATA1083973A (en) 1984-05-15
AT376844B true AT376844B (en) 1985-01-10

Family

ID=11476818

Family Applications (1)

Application Number Title Priority Date Filing Date
AT1083973A AT376844B (en) 1972-12-29 1973-12-27 SEMICONDUCTOR COMPONENT

Country Status (15)

Country Link
JP (1) JPS5147583B2 (en)
AT (1) AT376844B (en)
BE (1) BE809216A (en)
BR (1) BR7310275D0 (en)
CA (1) CA993568A (en)
CH (1) CH577750A5 (en)
DE (1) DE2364752A1 (en)
DK (1) DK140036C (en)
ES (1) ES421881A1 (en)
FR (1) FR2212645B1 (en)
GB (1) GB1460037A (en)
IT (1) IT1002384B (en)
NL (1) NL7317815A (en)
NO (1) NO140844C (en)
SE (1) SE398940B (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT377645B (en) * 1972-12-29 1985-04-10 Sony Corp SEMICONDUCTOR COMPONENT
JPS5914897B2 (en) * 1975-02-08 1984-04-06 ソニー株式会社 semiconductor equipment
JPS5754969B2 (en) * 1974-04-04 1982-11-20
JPS5753672B2 (en) * 1974-04-10 1982-11-13
JPS57658B2 (en) * 1974-04-16 1982-01-07
JPS5714064B2 (en) * 1974-04-25 1982-03-20
JPS5718710B2 (en) * 1974-05-10 1982-04-17
JPS5648983B2 (en) * 1974-05-10 1981-11-19
JPS5426789Y2 (en) * 1974-07-23 1979-09-03
IT1061510B (en) * 1975-06-30 1983-04-30 Rca Corp BIPOLAR TRANSISTOR PRESENTING AN EMITTER WITH A HIGH LOW CONCENTRATION OF IMPURITIES AND ITS MANUFACTURING METHOD
JPS52100978A (en) * 1976-02-20 1977-08-24 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device
JPS5565460A (en) * 1978-11-09 1980-05-16 Ibm Method of manufacturing semiconductor device improved in current gain
JPS5946103B2 (en) * 1980-03-10 1984-11-10 日本電信電話株式会社 transistor

Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2822310A (en) * 1955-04-21 1958-02-04 Philips Corp Semi-conductor device
DE1221363B (en) * 1964-04-25 1966-07-21 Telefunken Patent Method for reducing the sheet resistance of semiconductor components
DE1278023B (en) * 1964-02-20 1968-09-19 Westinghouse Electric Corp Semiconductor switching element and method for its manufacture
DE1297237B (en) * 1964-09-18 1969-06-12 Itt Ind Gmbh Deutsche Surface transistor and process for its manufacture
GB1160429A (en) * 1965-10-14 1969-08-06 Philco Ford Corp Improvements in and relating to Semiconductive Devices.
US3469117A (en) * 1966-01-08 1969-09-23 Nippon Telegraph & Telephone Electric circuit employing semiconductor devices
DE1917013A1 (en) * 1968-04-11 1969-10-23 Westinghouse Electric Corp Semiconductor four-layer triode
CH484519A (en) * 1967-08-11 1970-01-15 Westinghouse Electric Corp Controllable semiconductor component
US3500141A (en) * 1964-10-13 1970-03-10 Ibm Transistor structure
US3512056A (en) * 1967-04-25 1970-05-12 Westinghouse Electric Corp Double epitaxial layer high power,high speed transistor
DE1614383A1 (en) * 1966-12-01 1970-05-27 Rca Corp Semiconductor component and method for its manufacture
US3544863A (en) * 1968-10-29 1970-12-01 Motorola Inc Monolithic integrated circuit substructure with epitaxial decoupling capacitance
DE2048737A1 (en) * 1969-11-10 1971-05-13 Ibm Process for manufacturing integrated transistors
US3591430A (en) * 1968-11-14 1971-07-06 Philco Ford Corp Method for fabricating bipolar planar transistor having reduced minority carrier fringing
DE1764765A1 (en) * 1967-08-03 1971-07-08 Rca Corp Semiconductor component
DE2014173B2 (en) * 1969-03-28 1972-04-06 Hitachi, Ltd , Tokio METHOD OF MANUFACTURING A VARIETY OF SEMICONDUCTOR ARRANGEMENTS, IN PARTICULAR POWER TRANSISTORS
DE2060854A1 (en) * 1970-12-10 1972-08-17 Siemens Ag Semiconductor component with three zones of alternating conductivity type and arrangement for its control
FR2130399A1 (en) * 1971-03-20 1972-11-03 Philips Nv
DE2320563A1 (en) * 1972-04-20 1973-10-25 Sony Corp FOUR-LAYER TRIOD

Patent Citations (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2822310A (en) * 1955-04-21 1958-02-04 Philips Corp Semi-conductor device
DE1278023B (en) * 1964-02-20 1968-09-19 Westinghouse Electric Corp Semiconductor switching element and method for its manufacture
DE1221363B (en) * 1964-04-25 1966-07-21 Telefunken Patent Method for reducing the sheet resistance of semiconductor components
DE1297237B (en) * 1964-09-18 1969-06-12 Itt Ind Gmbh Deutsche Surface transistor and process for its manufacture
US3500141A (en) * 1964-10-13 1970-03-10 Ibm Transistor structure
GB1160429A (en) * 1965-10-14 1969-08-06 Philco Ford Corp Improvements in and relating to Semiconductive Devices.
DE1564509A1 (en) * 1965-10-14 1970-03-05 Philco Ford Corp transistor
US3469117A (en) * 1966-01-08 1969-09-23 Nippon Telegraph & Telephone Electric circuit employing semiconductor devices
DE1614383A1 (en) * 1966-12-01 1970-05-27 Rca Corp Semiconductor component and method for its manufacture
US3512056A (en) * 1967-04-25 1970-05-12 Westinghouse Electric Corp Double epitaxial layer high power,high speed transistor
DE1764765A1 (en) * 1967-08-03 1971-07-08 Rca Corp Semiconductor component
CH484519A (en) * 1967-08-11 1970-01-15 Westinghouse Electric Corp Controllable semiconductor component
DE1917013A1 (en) * 1968-04-11 1969-10-23 Westinghouse Electric Corp Semiconductor four-layer triode
US3544863A (en) * 1968-10-29 1970-12-01 Motorola Inc Monolithic integrated circuit substructure with epitaxial decoupling capacitance
US3591430A (en) * 1968-11-14 1971-07-06 Philco Ford Corp Method for fabricating bipolar planar transistor having reduced minority carrier fringing
DE2014173B2 (en) * 1969-03-28 1972-04-06 Hitachi, Ltd , Tokio METHOD OF MANUFACTURING A VARIETY OF SEMICONDUCTOR ARRANGEMENTS, IN PARTICULAR POWER TRANSISTORS
DE2048737A1 (en) * 1969-11-10 1971-05-13 Ibm Process for manufacturing integrated transistors
DE2060854A1 (en) * 1970-12-10 1972-08-17 Siemens Ag Semiconductor component with three zones of alternating conductivity type and arrangement for its control
FR2130399A1 (en) * 1971-03-20 1972-11-03 Philips Nv
DE2320563A1 (en) * 1972-04-20 1973-10-25 Sony Corp FOUR-LAYER TRIOD

Also Published As

Publication number Publication date
GB1460037A (en) 1976-12-31
AU6378973A (en) 1975-06-19
SE398940B (en) 1978-01-23
DK140036B (en) 1979-06-05
NL7317815A (en) 1974-07-02
NO140844C (en) 1979-11-21
JPS4991191A (en) 1974-08-30
BE809216A (en) 1974-04-16
DK140036C (en) 1979-12-24
JPS5147583B2 (en) 1976-12-15
ATA1083973A (en) 1984-05-15
ES421881A1 (en) 1976-08-01
DE2364752A1 (en) 1974-08-01
BR7310275D0 (en) 1974-09-24
CA993568A (en) 1976-07-20
IT1002384B (en) 1976-05-20
FR2212645A1 (en) 1974-07-26
FR2212645B1 (en) 1977-08-05
NO140844B (en) 1979-08-13
CH577750A5 (en) 1976-07-15

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Legal Events

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ELA Expired due to lapse of time