IT987932B - INTEGRATED SEMICONDUCTOR DEVICE - Google Patents

INTEGRATED SEMICONDUCTOR DEVICE

Info

Publication number
IT987932B
IT987932B IT2464473A IT2464473A IT987932B IT 987932 B IT987932 B IT 987932B IT 2464473 A IT2464473 A IT 2464473A IT 2464473 A IT2464473 A IT 2464473A IT 987932 B IT987932 B IT 987932B
Authority
IT
Italy
Prior art keywords
semiconductor device
integrated semiconductor
integrated
semiconductor
Prior art date
Application number
IT2464473A
Other languages
Italian (it)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of IT987932B publication Critical patent/IT987932B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/761PN junctions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817Thyristors only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821Collector regions of bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
IT2464473A 1972-05-31 1973-05-25 INTEGRATED SEMICONDUCTOR DEVICE IT987932B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7207325A NL7207325A (en) 1972-05-31 1972-05-31

Publications (1)

Publication Number Publication Date
IT987932B true IT987932B (en) 1975-03-20

Family

ID=19816170

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2464473A IT987932B (en) 1972-05-31 1973-05-25 INTEGRATED SEMICONDUCTOR DEVICE

Country Status (9)

Country Link
JP (1) JPS5112994B2 (en)
AU (1) AU475239B2 (en)
CA (1) CA970474A (en)
DE (1) DE2326672A1 (en)
FR (1) FR2186740B1 (en)
GB (1) GB1427261A (en)
IT (1) IT987932B (en)
NL (1) NL7207325A (en)
SE (1) SE384948B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52161311U (en) * 1976-05-31 1977-12-07
DE2835930C2 (en) * 1978-08-17 1986-07-17 Siemens AG, 1000 Berlin und 8000 München Monolithically integrated semiconductor circuit arrangement with at least one lateral transistor
FR2533366B1 (en) * 1982-09-21 1986-01-03 Trt Telecom Radio Electr METHOD FOR PRODUCING TRANSISTORS BY MONOLITHIC INTEGRATION ON A SEMICONDUCTOR SUBSTRATE
DE3484747D1 (en) * 1983-12-05 1991-08-01 Gen Electric SEMICONDUCTOR SUBSTRATE WITH AN ELECTRICALLY INSULATED SEMICONDUCTOR ARRANGEMENT.
US5216447A (en) * 1989-01-13 1993-06-01 Canon Kabushiki Kaisha Recording head

Also Published As

Publication number Publication date
AU5617473A (en) 1974-11-28
JPS4944683A (en) 1974-04-26
GB1427261A (en) 1976-03-10
FR2186740A1 (en) 1974-01-11
AU475239B2 (en) 1976-08-19
NL7207325A (en) 1973-12-04
FR2186740B1 (en) 1978-01-06
SE384948B (en) 1976-05-24
CA970474A (en) 1975-07-01
JPS5112994B2 (en) 1976-04-23
DE2326672A1 (en) 1973-12-20

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