GB1427261A - Integrated circuits - Google Patents

Integrated circuits

Info

Publication number
GB1427261A
GB1427261A GB2515273A GB2515273A GB1427261A GB 1427261 A GB1427261 A GB 1427261A GB 2515273 A GB2515273 A GB 2515273A GB 2515273 A GB2515273 A GB 2515273A GB 1427261 A GB1427261 A GB 1427261A
Authority
GB
United Kingdom
Prior art keywords
region
short
islands
regions
surrounding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2515273A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1427261A publication Critical patent/GB1427261A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817—Thyristors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

1427261 Integrated circuits PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 25 May 1973 [31 May 1972] 25152/73 Heading H1K A tub-shaped isolation region 304 surrounding a device-containing island in an integrated circuit and denning PN junctions with the outer region 303/307/308/309 of the device and with the surrounding semi-conductor body 305 is substantially short-circuited to a part 308 of the device region 303/307/308/309. Injection of carriers from the latter region into the isolation region 304 causing a leakage current from the device to the body 305, is thus prevented. Among the various devices which may be thus isolated are conventional NPN bipolar transistors having buried collector layers (Fig. 1, not shown) and lateral PNPN switches (Fig. 2, not shown). The device shown, however, is a vertical PNPN switch having inter-nested regions 318, 301, 302 and 303/307/308/309 of alternating conductivity types. The last-mentioned region has relatively low-resistivity portions 307, 308, 309 one of which, 309, is short-circuited to the isolation region 304 by a metal layer 320. This device may operate as a conventional PNP bipolar transistor if the regions 302 and 303 are connected by another short-circuit. With such a short-circuit an additional N-type region may be nested within the P-type region 318 to provide a four-layer switch of complementary layer order to that shown in Fig. 3. Diodes, resistors, capacitors and FETs may be formed in the isolated islands together with the multilayer devices already described. The tubshaped isolation regions surrounding adjacent islands may share a common portion between the two islands, to which portion a common short-circuiting contact for both islands is made. It is stated that the necessary shortcircuiting effect may be obtained with a low threshold-voltage diode, e.g. a Schottky diode. Si and III-V compound semi-conductors are referred to.
GB2515273A 1972-05-31 1973-05-25 Integrated circuits Expired GB1427261A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7207325A NL7207325A (en) 1972-05-31 1972-05-31

Publications (1)

Publication Number Publication Date
GB1427261A true GB1427261A (en) 1976-03-10

Family

ID=19816170

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2515273A Expired GB1427261A (en) 1972-05-31 1973-05-25 Integrated circuits

Country Status (9)

Country Link
JP (1) JPS5112994B2 (en)
AU (1) AU475239B2 (en)
CA (1) CA970474A (en)
DE (1) DE2326672A1 (en)
FR (1) FR2186740B1 (en)
GB (1) GB1427261A (en)
IT (1) IT987932B (en)
NL (1) NL7207325A (en)
SE (1) SE384948B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5216447A (en) * 1989-01-13 1993-06-01 Canon Kabushiki Kaisha Recording head

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52161311U (en) * 1976-05-31 1977-12-07
DE2835930C2 (en) * 1978-08-17 1986-07-17 Siemens AG, 1000 Berlin und 8000 München Monolithically integrated semiconductor circuit arrangement with at least one lateral transistor
FR2533366B1 (en) * 1982-09-21 1986-01-03 Trt Telecom Radio Electr METHOD FOR PRODUCING TRANSISTORS BY MONOLITHIC INTEGRATION ON A SEMICONDUCTOR SUBSTRATE
EP0144865B1 (en) * 1983-12-05 1991-06-26 General Electric Company Semiconductor wafer with an electrically-isolated semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5216447A (en) * 1989-01-13 1993-06-01 Canon Kabushiki Kaisha Recording head

Also Published As

Publication number Publication date
FR2186740B1 (en) 1978-01-06
DE2326672A1 (en) 1973-12-20
AU5617473A (en) 1974-11-28
CA970474A (en) 1975-07-01
SE384948B (en) 1976-05-24
JPS4944683A (en) 1974-04-26
FR2186740A1 (en) 1974-01-11
IT987932B (en) 1975-03-20
NL7207325A (en) 1973-12-04
AU475239B2 (en) 1976-08-19
JPS5112994B2 (en) 1976-04-23

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee