FR2186740A1 - - Google Patents
Info
- Publication number
- FR2186740A1 FR2186740A1 FR7319648A FR7319648A FR2186740A1 FR 2186740 A1 FR2186740 A1 FR 2186740A1 FR 7319648 A FR7319648 A FR 7319648A FR 7319648 A FR7319648 A FR 7319648A FR 2186740 A1 FR2186740 A1 FR 2186740A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0817—Thyristors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Element Separation (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7207325A NL7207325A (en) | 1972-05-31 | 1972-05-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2186740A1 true FR2186740A1 (en) | 1974-01-11 |
FR2186740B1 FR2186740B1 (en) | 1978-01-06 |
Family
ID=19816170
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7319648A Expired FR2186740B1 (en) | 1972-05-31 | 1973-05-30 |
Country Status (9)
Country | Link |
---|---|
JP (1) | JPS5112994B2 (en) |
AU (1) | AU475239B2 (en) |
CA (1) | CA970474A (en) |
DE (1) | DE2326672A1 (en) |
FR (1) | FR2186740B1 (en) |
GB (1) | GB1427261A (en) |
IT (1) | IT987932B (en) |
NL (1) | NL7207325A (en) |
SE (1) | SE384948B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2533366A1 (en) * | 1982-09-21 | 1984-03-23 | Trt Telecom Radio Electr | Method of producing transistors by monolithic integration on a semiconductor substrate. |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52161311U (en) * | 1976-05-31 | 1977-12-07 | ||
DE2835930C2 (en) * | 1978-08-17 | 1986-07-17 | Siemens AG, 1000 Berlin und 8000 München | Monolithically integrated semiconductor circuit arrangement with at least one lateral transistor |
DE3484747D1 (en) * | 1983-12-05 | 1991-08-01 | Gen Electric | SEMICONDUCTOR SUBSTRATE WITH AN ELECTRICALLY INSULATED SEMICONDUCTOR ARRANGEMENT. |
DE69015651T2 (en) * | 1989-01-13 | 1995-06-08 | Canon Kk | Recording head. |
-
1972
- 1972-05-31 NL NL7207325A patent/NL7207325A/xx not_active Application Discontinuation
-
1973
- 1973-05-25 GB GB2515273A patent/GB1427261A/en not_active Expired
- 1973-05-25 CA CA172,293A patent/CA970474A/en not_active Expired
- 1973-05-25 DE DE19732326672 patent/DE2326672A1/en not_active Ceased
- 1973-05-25 IT IT2464473A patent/IT987932B/en active
- 1973-05-28 JP JP5876073A patent/JPS5112994B2/ja not_active Expired
- 1973-05-28 SE SE7307492A patent/SE384948B/en unknown
- 1973-05-28 AU AU56174/73A patent/AU475239B2/en not_active Expired
- 1973-05-30 FR FR7319648A patent/FR2186740B1/fr not_active Expired
Non-Patent Citations (1)
Title |
---|
NEANT * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2533366A1 (en) * | 1982-09-21 | 1984-03-23 | Trt Telecom Radio Electr | Method of producing transistors by monolithic integration on a semiconductor substrate. |
Also Published As
Publication number | Publication date |
---|---|
IT987932B (en) | 1975-03-20 |
CA970474A (en) | 1975-07-01 |
FR2186740B1 (en) | 1978-01-06 |
SE384948B (en) | 1976-05-24 |
NL7207325A (en) | 1973-12-04 |
AU475239B2 (en) | 1976-08-19 |
GB1427261A (en) | 1976-03-10 |
JPS5112994B2 (en) | 1976-04-23 |
JPS4944683A (en) | 1974-04-26 |
AU5617473A (en) | 1974-11-28 |
DE2326672A1 (en) | 1973-12-20 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |