JPS5112994B2 - - Google Patents

Info

Publication number
JPS5112994B2
JPS5112994B2 JP5876073A JP5876073A JPS5112994B2 JP S5112994 B2 JPS5112994 B2 JP S5112994B2 JP 5876073 A JP5876073 A JP 5876073A JP 5876073 A JP5876073 A JP 5876073A JP S5112994 B2 JPS5112994 B2 JP S5112994B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP5876073A
Other versions
JPS4944683A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4944683A publication Critical patent/JPS4944683A/ja
Publication of JPS5112994B2 publication Critical patent/JPS5112994B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/761PN junctions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817Thyristors only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821Collector regions of bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP5876073A 1972-05-31 1973-05-28 Expired JPS5112994B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7207325A NL7207325A (ja) 1972-05-31 1972-05-31

Publications (2)

Publication Number Publication Date
JPS4944683A JPS4944683A (ja) 1974-04-26
JPS5112994B2 true JPS5112994B2 (ja) 1976-04-23

Family

ID=19816170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5876073A Expired JPS5112994B2 (ja) 1972-05-31 1973-05-28

Country Status (9)

Country Link
JP (1) JPS5112994B2 (ja)
AU (1) AU475239B2 (ja)
CA (1) CA970474A (ja)
DE (1) DE2326672A1 (ja)
FR (1) FR2186740B1 (ja)
GB (1) GB1427261A (ja)
IT (1) IT987932B (ja)
NL (1) NL7207325A (ja)
SE (1) SE384948B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52161311U (ja) * 1976-05-31 1977-12-07

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2835930C2 (de) * 1978-08-17 1986-07-17 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierte Halbleiterschaltungsanordnung mit mindestens einem Lateraltransistor
FR2533366B1 (fr) * 1982-09-21 1986-01-03 Trt Telecom Radio Electr Procede de realisation de transistors par integration monolithique sur un substrat semiconducteur
EP0144865B1 (en) * 1983-12-05 1991-06-26 General Electric Company Semiconductor wafer with an electrically-isolated semiconductor device
DE69015651T2 (de) * 1989-01-13 1995-06-08 Canon Kk Aufzeichnungskopf.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52161311U (ja) * 1976-05-31 1977-12-07

Also Published As

Publication number Publication date
FR2186740B1 (ja) 1978-01-06
DE2326672A1 (de) 1973-12-20
AU5617473A (en) 1974-11-28
CA970474A (en) 1975-07-01
SE384948B (sv) 1976-05-24
JPS4944683A (ja) 1974-04-26
FR2186740A1 (ja) 1974-01-11
IT987932B (it) 1975-03-20
GB1427261A (en) 1976-03-10
NL7207325A (ja) 1973-12-04
AU475239B2 (en) 1976-08-19

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