FR2533366B1 - Procede de realisation de transistors par integration monolithique sur un substrat semiconducteur - Google Patents

Procede de realisation de transistors par integration monolithique sur un substrat semiconducteur

Info

Publication number
FR2533366B1
FR2533366B1 FR8215879A FR8215879A FR2533366B1 FR 2533366 B1 FR2533366 B1 FR 2533366B1 FR 8215879 A FR8215879 A FR 8215879A FR 8215879 A FR8215879 A FR 8215879A FR 2533366 B1 FR2533366 B1 FR 2533366B1
Authority
FR
France
Prior art keywords
semiconductor substrate
monolithic integration
producing transistors
transistors
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8215879A
Other languages
English (en)
Other versions
FR2533366A1 (fr
Inventor
Gilbert Marie Marcel Ferrieu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telecommunications Radioelectriques et Telephoniques SA TRT
Original Assignee
Telecommunications Radioelectriques et Telephoniques SA TRT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telecommunications Radioelectriques et Telephoniques SA TRT filed Critical Telecommunications Radioelectriques et Telephoniques SA TRT
Priority to FR8215879A priority Critical patent/FR2533366B1/fr
Publication of FR2533366A1 publication Critical patent/FR2533366A1/fr
Application granted granted Critical
Publication of FR2533366B1 publication Critical patent/FR2533366B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
FR8215879A 1982-09-21 1982-09-21 Procede de realisation de transistors par integration monolithique sur un substrat semiconducteur Expired FR2533366B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8215879A FR2533366B1 (fr) 1982-09-21 1982-09-21 Procede de realisation de transistors par integration monolithique sur un substrat semiconducteur

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8215879A FR2533366B1 (fr) 1982-09-21 1982-09-21 Procede de realisation de transistors par integration monolithique sur un substrat semiconducteur

Publications (2)

Publication Number Publication Date
FR2533366A1 FR2533366A1 (fr) 1984-03-23
FR2533366B1 true FR2533366B1 (fr) 1986-01-03

Family

ID=9277610

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8215879A Expired FR2533366B1 (fr) 1982-09-21 1982-09-21 Procede de realisation de transistors par integration monolithique sur un substrat semiconducteur

Country Status (1)

Country Link
FR (1) FR2533366B1 (fr)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7207325A (fr) * 1972-05-31 1973-12-04

Also Published As

Publication number Publication date
FR2533366A1 (fr) 1984-03-23

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Legal Events

Date Code Title Description
ST Notification of lapse