FR2350937A1 - Procede de retrait selectif de silice portee par un substrat - Google Patents

Procede de retrait selectif de silice portee par un substrat

Info

Publication number
FR2350937A1
FR2350937A1 FR7714786A FR7714786A FR2350937A1 FR 2350937 A1 FR2350937 A1 FR 2350937A1 FR 7714786 A FR7714786 A FR 7714786A FR 7714786 A FR7714786 A FR 7714786A FR 2350937 A1 FR2350937 A1 FR 2350937A1
Authority
FR
France
Prior art keywords
substrate
removal process
process carried
silica removal
selective silica
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR7714786A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Plasma Corp
INT PLASMA CORP
Original Assignee
International Plasma Corp
INT PLASMA CORP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Plasma Corp, INT PLASMA CORP filed Critical International Plasma Corp
Publication of FR2350937A1 publication Critical patent/FR2350937A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Silicon Compounds (AREA)
  • Electrodes Of Semiconductors (AREA)
FR7714786A 1976-05-14 1977-05-13 Procede de retrait selectif de silice portee par un substrat Pending FR2350937A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US68637376A 1976-05-14 1976-05-14

Publications (1)

Publication Number Publication Date
FR2350937A1 true FR2350937A1 (fr) 1977-12-09

Family

ID=24756042

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7714786A Pending FR2350937A1 (fr) 1976-05-14 1977-05-13 Procede de retrait selectif de silice portee par un substrat

Country Status (8)

Country Link
US (1) US4127437A (fr)
JP (1) JPS6048902B2 (fr)
CH (1) CH614808A5 (fr)
DE (1) DE2721086A1 (fr)
FR (1) FR2350937A1 (fr)
GB (1) GB1539700A (fr)
IT (1) IT1083827B (fr)
NL (1) NL7705320A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0020144A2 (fr) * 1979-05-31 1980-12-10 Fujitsu Limited Procédé de fabrication d'un dispositif semiconducteur
EP0054164A1 (fr) * 1980-12-16 1982-06-23 International Business Machines Corporation Procédé pour aplanir du dioxyde de silicium à surface non-planaire pour dispositifs semiconducteurs

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2802976C2 (de) * 1978-01-24 1980-02-07 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren und Vorrichtung zur Herstellung von Durchbrüchen (Löchern) in Glasplatten, vorzugsweise mit feinsten Strukturen
JPS5562773A (en) * 1978-11-06 1980-05-12 Seiko Epson Corp Preparation of semiconductor device
NL7906996A (nl) * 1979-09-20 1981-03-24 Philips Nv Werkwijze voor het reinigen van een reaktor.
JPS56162831A (en) * 1980-05-19 1981-12-15 Mitsubishi Electric Corp Forming method for electrode and wiring layer
US4325182A (en) * 1980-08-25 1982-04-20 General Electric Company Fast isolation diffusion
JPS57190320A (en) * 1981-05-20 1982-11-22 Toshiba Corp Dry etching method
US4506005A (en) * 1983-05-10 1985-03-19 Gca Corporation Method of catalytic etching
JPS617639A (ja) * 1984-06-22 1986-01-14 Toshiba Corp 半導体薄膜の分解装置
US4749440A (en) * 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
US5044314A (en) * 1986-10-15 1991-09-03 Advantage Production Technology, Inc. Semiconductor wafer processing apparatus
US5030319A (en) * 1988-12-27 1991-07-09 Kabushiki Kaisha Toshiba Method of oxide etching with condensed plasma reaction product
KR930005440B1 (ko) * 1989-10-02 1993-06-21 다이닛뽕 스쿠린 세이소오 가부시키가이샤 절연막의 선택적 제거방법
US5087323A (en) * 1990-07-12 1992-02-11 Idaho Research Foundation, Inc. Fine line pattern formation by aerosol centrifuge etching technique
US5294568A (en) * 1990-10-12 1994-03-15 Genus, Inc. Method of selective etching native oxide
JP2833946B2 (ja) * 1992-12-08 1998-12-09 日本電気株式会社 エッチング方法および装置
KR0170902B1 (ko) * 1995-12-29 1999-03-30 김주용 반도체 소자의 제조방법
US6153358A (en) 1996-12-23 2000-11-28 Micorn Technology, Inc. Polyimide as a mask in vapor hydrogen fluoride etching and method of producing a micropoint
US6090683A (en) 1997-06-16 2000-07-18 Micron Technology, Inc. Method of etching thermally grown oxide substantially selectively relative to deposited oxide
US6165853A (en) * 1997-06-16 2000-12-26 Micron Technology, Inc. Trench isolation method
US6022485A (en) * 1997-10-17 2000-02-08 International Business Machines Corporation Method for controlled removal of material from a solid surface
US6740247B1 (en) 1999-02-05 2004-05-25 Massachusetts Institute Of Technology HF vapor phase wafer cleaning and oxide etching
US6544842B1 (en) 1999-05-01 2003-04-08 Micron Technology, Inc. Method of forming hemisphere grained silicon on a template on a semiconductor work object
KR100381011B1 (ko) 2000-11-13 2003-04-26 한국전자통신연구원 멤즈소자 제조용 미세구조체를 고착없이 띄우는 방법
JP5102467B2 (ja) * 2006-06-29 2012-12-19 東京エレクトロン株式会社 基板処理方法
WO2024095769A1 (fr) * 2022-11-02 2024-05-10 Ａｇｃ株式会社 Procédé permettant de fabriquer un élément présentant une structure concave, et élément présentant une structure concave

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3535137A (en) * 1967-01-13 1970-10-20 Ibm Method of fabricating etch resistant masks
US3471291A (en) * 1967-05-29 1969-10-07 Gen Electric Protective plating of oxide-free silicon surfaces
US3520687A (en) * 1967-05-29 1970-07-14 Gen Electric Etching of silicon dioxide by photosensitive solutions
US3494768A (en) * 1967-05-29 1970-02-10 Gen Electric Condensed vapor phase photoetching of surfaces
US3615956A (en) * 1969-03-27 1971-10-26 Signetics Corp Gas plasma vapor etching process
US3935117A (en) * 1970-08-25 1976-01-27 Fuji Photo Film Co., Ltd. Photosensitive etching composition
US3867216A (en) * 1972-05-12 1975-02-18 Adir Jacob Process and material for manufacturing semiconductor devices
JPS5539903B2 (fr) * 1972-10-19 1980-10-14
DE2411866A1 (de) * 1973-03-12 1974-09-19 Fuji Photo Film Co Ltd Verfahren zur herstellung von metallbildern und mittel zu seiner durchfuehrung

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/77 *
EXBK/80 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0020144A2 (fr) * 1979-05-31 1980-12-10 Fujitsu Limited Procédé de fabrication d'un dispositif semiconducteur
EP0020144A3 (en) * 1979-05-31 1982-12-01 Fujitsu Limited Method of producing a semiconductor device
EP0054164A1 (fr) * 1980-12-16 1982-06-23 International Business Machines Corporation Procédé pour aplanir du dioxyde de silicium à surface non-planaire pour dispositifs semiconducteurs
US4389281A (en) * 1980-12-16 1983-06-21 International Business Machines Corporation Method of planarizing silicon dioxide in semiconductor devices

Also Published As

Publication number Publication date
NL7705320A (nl) 1977-11-16
US4127437A (en) 1978-11-28
JPS531198A (en) 1978-01-07
DE2721086A1 (de) 1977-12-01
IT1083827B (it) 1985-05-25
CH614808A5 (fr) 1979-12-14
GB1539700A (en) 1979-01-31
JPS6048902B2 (ja) 1985-10-30

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