JPS5562773A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS5562773A
JPS5562773A JP13644678A JP13644678A JPS5562773A JP S5562773 A JPS5562773 A JP S5562773A JP 13644678 A JP13644678 A JP 13644678A JP 13644678 A JP13644678 A JP 13644678A JP S5562773 A JPS5562773 A JP S5562773A
Authority
JP
Japan
Prior art keywords
resist
oxide film
portions
gate
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13644678A
Other languages
Japanese (ja)
Other versions
JPS6359265B2 (en
Inventor
Toshiaki Ogata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP13644678A priority Critical patent/JPS5562773A/en
Publication of JPS5562773A publication Critical patent/JPS5562773A/en
Publication of JPS6359265B2 publication Critical patent/JPS6359265B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To shorten the spacing of opened holes, by inversion-etching a gate oxide film by using a resist remaining in a concave portion between gate wiring and a field oxide film as a mask.
CONSTITUTION: A field oxide film 11 is formed, a gate oxide film 15 and gate wiring 12 are manufactured and source and drain layers 13, 14 are prepared by shooting ions. When these portions are covered with an insulating film 16, a resist 17 is stacked and the resist 17 is successively removed from the surface, the resist can be left in a concave portion of the film 16. When these portions are etched by a remaining resist mask by using HF gas in a decompression vessel, these portions are inversion-etched, and films under the resist are removed by means of etching and opened 18, 19. Density of MOSIC can also be heightened because the spacing of source and drain diffusing holes can be lessened by gate self-matching according to this method.
COPYRIGHT: (C)1980,JPO&Japio
JP13644678A 1978-11-06 1978-11-06 Preparation of semiconductor device Granted JPS5562773A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13644678A JPS5562773A (en) 1978-11-06 1978-11-06 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13644678A JPS5562773A (en) 1978-11-06 1978-11-06 Preparation of semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP8737387A Division JPH02270321A (en) 1987-04-09 1987-04-09 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5562773A true JPS5562773A (en) 1980-05-12
JPS6359265B2 JPS6359265B2 (en) 1988-11-18

Family

ID=15175295

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13644678A Granted JPS5562773A (en) 1978-11-06 1978-11-06 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5562773A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50107877A (en) * 1974-01-30 1975-08-25
JPS531198A (en) * 1976-05-14 1978-01-07 Int Plasma Corp Method of etching silicon dioxide

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50107877A (en) * 1974-01-30 1975-08-25
JPS531198A (en) * 1976-05-14 1978-01-07 Int Plasma Corp Method of etching silicon dioxide

Also Published As

Publication number Publication date
JPS6359265B2 (en) 1988-11-18

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