JPS5562773A - Preparation of semiconductor device - Google Patents
Preparation of semiconductor deviceInfo
- Publication number
- JPS5562773A JPS5562773A JP13644678A JP13644678A JPS5562773A JP S5562773 A JPS5562773 A JP S5562773A JP 13644678 A JP13644678 A JP 13644678A JP 13644678 A JP13644678 A JP 13644678A JP S5562773 A JPS5562773 A JP S5562773A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- oxide film
- portions
- gate
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To shorten the spacing of opened holes, by inversion-etching a gate oxide film by using a resist remaining in a concave portion between gate wiring and a field oxide film as a mask.
CONSTITUTION: A field oxide film 11 is formed, a gate oxide film 15 and gate wiring 12 are manufactured and source and drain layers 13, 14 are prepared by shooting ions. When these portions are covered with an insulating film 16, a resist 17 is stacked and the resist 17 is successively removed from the surface, the resist can be left in a concave portion of the film 16. When these portions are etched by a remaining resist mask by using HF gas in a decompression vessel, these portions are inversion-etched, and films under the resist are removed by means of etching and opened 18, 19. Density of MOSIC can also be heightened because the spacing of source and drain diffusing holes can be lessened by gate self-matching according to this method.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13644678A JPS5562773A (en) | 1978-11-06 | 1978-11-06 | Preparation of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13644678A JPS5562773A (en) | 1978-11-06 | 1978-11-06 | Preparation of semiconductor device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8737387A Division JPH02270321A (en) | 1987-04-09 | 1987-04-09 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5562773A true JPS5562773A (en) | 1980-05-12 |
JPS6359265B2 JPS6359265B2 (en) | 1988-11-18 |
Family
ID=15175295
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13644678A Granted JPS5562773A (en) | 1978-11-06 | 1978-11-06 | Preparation of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5562773A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50107877A (en) * | 1974-01-30 | 1975-08-25 | ||
JPS531198A (en) * | 1976-05-14 | 1978-01-07 | Int Plasma Corp | Method of etching silicon dioxide |
-
1978
- 1978-11-06 JP JP13644678A patent/JPS5562773A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50107877A (en) * | 1974-01-30 | 1975-08-25 | ||
JPS531198A (en) * | 1976-05-14 | 1978-01-07 | Int Plasma Corp | Method of etching silicon dioxide |
Also Published As
Publication number | Publication date |
---|---|
JPS6359265B2 (en) | 1988-11-18 |
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