JPS5550636A - Preparation of semiconductor device - Google Patents
Preparation of semiconductor deviceInfo
- Publication number
- JPS5550636A JPS5550636A JP12362878A JP12362878A JPS5550636A JP S5550636 A JPS5550636 A JP S5550636A JP 12362878 A JP12362878 A JP 12362878A JP 12362878 A JP12362878 A JP 12362878A JP S5550636 A JPS5550636 A JP S5550636A
- Authority
- JP
- Japan
- Prior art keywords
- separation region
- sio
- manufactured
- lateral direction
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE: To improve the density of integration, by preventing the bulging out of an insulating separation region in the lateral direction.
CONSTITUTION: SiO22 and Si3N43 are stacked on a surface of a Si monocrystal 1, and a groove 6 is manufactured by etching the films 3, 2 and the crystal 1 by CF4 gas by using a resist mask. In this case, the peaks of Si3N4 are formed. A SiO2 film 4 is made up to the groove 6 by means of wet oxidation, and Si with approximate 10KeV energy is shot on the whole surface. The film 3 is removed by hot phossphoric acid, and a poly Si layer 5 is manufactured by means of a known selection growth method using SiCl4, thus completing a separation layer. Since there is no oxidation in the lateral direction according to this method, the width of a separation region is extremely narrowed, and an IC circuit can be compacted. And since the separation region and a surface of an electrical, active region become the same plane and birdheads are not built up on the separation region, disconnection can be prevented.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12362878A JPS5550636A (en) | 1978-10-09 | 1978-10-09 | Preparation of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12362878A JPS5550636A (en) | 1978-10-09 | 1978-10-09 | Preparation of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5550636A true JPS5550636A (en) | 1980-04-12 |
JPS6136381B2 JPS6136381B2 (en) | 1986-08-18 |
Family
ID=14865281
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12362878A Granted JPS5550636A (en) | 1978-10-09 | 1978-10-09 | Preparation of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5550636A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5939581U (en) * | 1982-09-02 | 1984-03-13 | 三洋電機株式会社 | White balance correction circuit |
US5653802A (en) * | 1988-03-27 | 1997-08-05 | Canon Kabushiki Kaisha | Method for forming crystal |
US5733369A (en) * | 1986-03-28 | 1998-03-31 | Canon Kabushiki Kaisha | Method for forming crystal |
US5846320A (en) * | 1986-03-31 | 1998-12-08 | Canon Kabushiki Kaisha | Method for forming crystal and crystal article obtained by said method |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0259886U (en) * | 1988-10-17 | 1990-05-01 |
-
1978
- 1978-10-09 JP JP12362878A patent/JPS5550636A/en active Granted
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5939581U (en) * | 1982-09-02 | 1984-03-13 | 三洋電機株式会社 | White balance correction circuit |
JPH0422616Y2 (en) * | 1982-09-02 | 1992-05-25 | ||
US5733369A (en) * | 1986-03-28 | 1998-03-31 | Canon Kabushiki Kaisha | Method for forming crystal |
US5853478A (en) * | 1986-03-28 | 1998-12-29 | Canon Kabushiki Kaisha | Method for forming crystal and crystal article obtained by said method |
US5846320A (en) * | 1986-03-31 | 1998-12-08 | Canon Kabushiki Kaisha | Method for forming crystal and crystal article obtained by said method |
US5653802A (en) * | 1988-03-27 | 1997-08-05 | Canon Kabushiki Kaisha | Method for forming crystal |
Also Published As
Publication number | Publication date |
---|---|
JPS6136381B2 (en) | 1986-08-18 |
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