ES525658A0 - Un metodo para producir un dispositivo semiconductor de pelicula delgada - Google Patents
Un metodo para producir un dispositivo semiconductor de pelicula delgadaInfo
- Publication number
- ES525658A0 ES525658A0 ES525658A ES525658A ES525658A0 ES 525658 A0 ES525658 A0 ES 525658A0 ES 525658 A ES525658 A ES 525658A ES 525658 A ES525658 A ES 525658A ES 525658 A0 ES525658 A0 ES 525658A0
- Authority
- ES
- Spain
- Prior art keywords
- producing
- thin film
- semiconductive device
- film semiconductive
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US41915882A | 1982-09-17 | 1982-09-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ES525658A0 true ES525658A0 (es) | 1984-08-16 |
| ES8407247A1 ES8407247A1 (es) | 1984-08-16 |
Family
ID=23661028
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES525658A Expired ES8407247A1 (es) | 1982-09-17 | 1983-09-16 | Un metodo para producir un dispositivo semiconductor de pelicula delgada |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0106540A3 (es) |
| JP (1) | JPS5972779A (es) |
| AU (1) | AU1920483A (es) |
| CA (1) | CA1225139A (es) |
| ES (1) | ES8407247A1 (es) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4720443A (en) * | 1984-04-05 | 1988-01-19 | Canon Kabushiki Kaisha | Member having light receiving layer with nonparallel interfaces |
| EP0165743B1 (en) * | 1984-06-05 | 1990-12-19 | Canon Kabushiki Kaisha | Light-receiving member |
| US4678733A (en) * | 1984-10-15 | 1987-07-07 | Canon Kabushiki Kaisha | Member having light receiving layer of A-Si: Ge (C,N,O) A-Si/surface antireflection layer with non-parallel interfaces |
| DE3446807A1 (de) * | 1984-12-21 | 1986-07-03 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Duennschichtsolarzelle mit n-i-p-struktur |
| US4956685A (en) * | 1984-12-21 | 1990-09-11 | Licentia Patent-Verwaltungs Gmbh | Thin film solar cell having a concave n-i-p structure |
| US4683160A (en) * | 1985-05-09 | 1987-07-28 | Exxon Research And Engineering Company | Solar cells with correlated roughness substrate |
| JPS6236676A (ja) * | 1985-08-10 | 1987-02-17 | Canon Inc | 光導電部材用の支持体及び該支持体を有する光導電部材 |
| JPS6289064A (ja) * | 1985-10-16 | 1987-04-23 | Canon Inc | 光受容部材 |
| JPS6290663A (ja) * | 1985-10-17 | 1987-04-25 | Canon Inc | 光受容部材 |
| JPS62106468A (ja) * | 1985-11-01 | 1987-05-16 | Canon Inc | 光受容部材 |
| JPS62106470A (ja) * | 1985-11-02 | 1987-05-16 | Canon Inc | 光受容部材 |
| US4929524A (en) * | 1986-09-12 | 1990-05-29 | Canon Kabushiki Kaisha | Organic photo conductive medium |
| KR100741933B1 (ko) | 2004-09-21 | 2007-07-23 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 제조 방법 |
| US7736750B2 (en) * | 2006-12-14 | 2010-06-15 | Ppg Industries Ohio, Inc. | Coated non-metallic sheet having a brushed metal appearance, and coatings for and method of making same |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1046795B (de) * | 1954-11-10 | 1958-12-18 | Freiberger Praez Smechanik Veb | Halbleiter-Photoelement, bei dem die Oberflaeche der Halbleiterschicht mit der Lichteinfallsrichtung einen von 90íÒ abweichenden Winkel bildet |
| CA751084A (en) * | 1963-02-06 | 1967-01-17 | John W. Faust, Jr. | Photovoltaic devices with reduced reflection losses |
| US3487223A (en) * | 1968-07-10 | 1969-12-30 | Us Air Force | Multiple internal reflection structure in a silicon detector which is obtained by sandblasting |
| US3973994A (en) * | 1974-03-11 | 1976-08-10 | Rca Corporation | Solar cell with grooved surface |
| US4328390A (en) * | 1979-09-17 | 1982-05-04 | The University Of Delaware | Thin film photovoltaic cell |
-
1983
- 1983-09-08 CA CA000436309A patent/CA1225139A/en not_active Expired
- 1983-09-15 EP EP83305400A patent/EP0106540A3/en not_active Withdrawn
- 1983-09-16 AU AU19204/83A patent/AU1920483A/en not_active Abandoned
- 1983-09-16 ES ES525658A patent/ES8407247A1/es not_active Expired
- 1983-09-17 JP JP58170625A patent/JPS5972779A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0106540A2 (en) | 1984-04-25 |
| ES8407247A1 (es) | 1984-08-16 |
| EP0106540A3 (en) | 1985-06-05 |
| AU1920483A (en) | 1984-03-22 |
| JPS5972779A (ja) | 1984-04-24 |
| CA1225139A (en) | 1987-08-04 |
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