IT1194477B - Dispositivo laser a semiconduttori - Google Patents

Dispositivo laser a semiconduttori

Info

Publication number
IT1194477B
IT1194477B IT23850/83A IT2385083A IT1194477B IT 1194477 B IT1194477 B IT 1194477B IT 23850/83 A IT23850/83 A IT 23850/83A IT 2385083 A IT2385083 A IT 2385083A IT 1194477 B IT1194477 B IT 1194477B
Authority
IT
Italy
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Application number
IT23850/83A
Other languages
English (en)
Other versions
IT8323850A0 (it
Inventor
Masaaki Sawai
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of IT8323850A0 publication Critical patent/IT8323850A0/it
Application granted granted Critical
Publication of IT1194477B publication Critical patent/IT1194477B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02407Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02415Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00Functional characteristics
    • H01S2301/14Semiconductor lasers with special structural design for lasing in a specific polarisation mode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00Functional characteristics
    • H01S2301/18Semiconductor lasers with special structural design for influencing the near- or far-field
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/02208Mountings; Housings characterised by the shape of the housings
    • H01S5/02212Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068Stabilisation of laser output parameters
    • H01S5/0683Stabilisation of laser output parameters by monitoring the optical output parameters
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
IT23850/83A 1982-11-24 1983-11-23 Dispositivo laser a semiconduttori IT1194477B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57204645A JPS5994891A (ja) 1982-11-24 1982-11-24 半導体レ−ザ装置

Publications (2)

Publication Number Publication Date
IT8323850A0 IT8323850A0 (it) 1983-11-23
IT1194477B true IT1194477B (it) 1988-09-22

Family

ID=16493906

Family Applications (1)

Application Number Title Priority Date Filing Date
IT23850/83A IT1194477B (it) 1982-11-24 1983-11-23 Dispositivo laser a semiconduttori

Country Status (7)

Country Link
US (1) US4604753A (it)
JP (1) JPS5994891A (it)
KR (1) KR840006578A (it)
DE (1) DE3342111A1 (it)
FR (1) FR2536596A1 (it)
GB (1) GB2131607B (it)
IT (1) IT1194477B (it)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2163008A (en) * 1984-08-08 1986-02-12 Varian Associates Miniature, temperature controlled phase detector
JPS6195591A (ja) * 1984-10-16 1986-05-14 Sony Corp 半導体レ−ザ
JPS61107784A (ja) * 1984-10-30 1986-05-26 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置
US4698662A (en) * 1985-02-05 1987-10-06 Gould Inc. Multichip thin film module
JPS61189658A (ja) * 1985-02-18 1986-08-23 Fuji Photo Film Co Ltd 半導体素子温度制御装置
JPS61189657A (ja) * 1985-02-18 1986-08-23 Fuji Photo Film Co Ltd 半導体素子温度制御装置
HUT39871A (en) * 1985-02-19 1986-10-29 Videoton Elekt Vallalat Method for measuring the temperature of semiconductor laser diode and circuit arrangement for carrying out thereof
JPS61274379A (ja) * 1985-05-29 1986-12-04 Olympus Optical Co Ltd 半導体レ−ザ駆動装置
WO1987001875A1 (en) * 1985-09-24 1987-03-26 Bell Communications Research, Inc. Temperature stabilization of injection lasers
JPS6280364U (it) * 1985-11-11 1987-05-22
US4817109A (en) * 1985-12-10 1989-03-28 501 Sharp Kabushiki Kaisha External resonator type semiconductor laser apparatus
US5001694A (en) * 1986-05-06 1991-03-19 Pencom International Corp. Tracking and focus actuator for a holographic optical head
US4805783A (en) * 1986-07-23 1989-02-21 Mayer John R Slat wall advertising panel
US4749842A (en) * 1987-05-06 1988-06-07 Lightwave Electronics Co. Ring laser and method of making same
US4955270A (en) * 1987-09-21 1990-09-11 Beta Raven Inc. Dry flow sensor
US4948221A (en) * 1988-08-30 1990-08-14 Eastman Kodak Company Athermalized optical head
US5043775A (en) * 1989-02-21 1991-08-27 Wai-Hon Lee Semiconductor laser assembly
US4924471A (en) * 1989-03-13 1990-05-08 Amoco Corporation Method for increasing the output power of a laser diode
US5008736A (en) * 1989-11-20 1991-04-16 Motorola, Inc. Thermal protection method for a power device
US5024535A (en) * 1989-12-20 1991-06-18 United Technologies Corporation Semiconductor light source temperature measurement
US4993801A (en) * 1989-12-27 1991-02-19 Eastman Kodak Company Optical head
US4996169A (en) * 1990-02-21 1991-02-26 Pencom International Corp. Semiconductor laser assembly
US5032897A (en) * 1990-02-28 1991-07-16 International Business Machines Corp. Integrated thermoelectric cooling
US5012325A (en) * 1990-04-24 1991-04-30 International Business Machines Corp. Thermoelectric cooling via electrical connections
US5156999A (en) * 1990-06-08 1992-10-20 Wai-Hon Lee Packaging method for semiconductor laser/detector devices
US5118964A (en) * 1990-09-26 1992-06-02 At&T Bell Laboratories Thermo-electric temperature control arrangement for laser apparatus
DE4039371C2 (de) * 1990-12-10 2000-05-31 Zeiss Carl Fa Einrichtung zur Stabilisierung der Wellenlänge einer Laserdiode
JPH04105572U (ja) * 1991-02-26 1992-09-10 ソニー株式会社 レーザ装置
JP3407893B2 (ja) * 1991-05-27 2003-05-19 パイオニア株式会社 半導体レーザ制御装置
US5197076A (en) * 1991-11-15 1993-03-23 Davis James G Temperature stabilizable laser apparatus
US5313333A (en) * 1992-12-23 1994-05-17 Estman Kodak Company Method and apparatus for combined active and passive athermalization of an optical assembly
US5270869A (en) * 1992-12-23 1993-12-14 Eastman Kodak Company Passively athermalized optical assembly incorporating laminate fiber compensation ring
US5317875A (en) * 1992-12-23 1994-06-07 Eastman Kodak Company Thermally-controlled rotary displacement actuator operable for precise displacement of an optical or mechanical element
US5270870A (en) * 1992-12-23 1993-12-14 Eastman Kodak Company Athermalized beam source and collimator lens assembly
US6043872A (en) * 1994-06-22 2000-03-28 Nec Corporation Method and apparatus for determining defectiveness/non-defectiveness of a semiconductor laser by examining an optical output from the semiconductor laser
JP3432620B2 (ja) * 1994-12-20 2003-08-04 富士通株式会社 光送信機及びレーザダイオードモジュール
JPH08264898A (ja) * 1995-03-23 1996-10-11 Mitsubishi Electric Corp 半導体レーザ装置
DE19617552A1 (de) * 1996-05-02 1997-11-06 Heidelberger Druckmasch Ag Verfahren und Vorrichtung zur Regelung der Temperatur in einer mit Laserlicht arbeitenden Druckplatten-Beschriftungseinheit, insbesondere einer Offset-Druckmaschine
JP3339369B2 (ja) * 1997-05-30 2002-10-28 株式会社デンソー レーザダイオード
JP3456121B2 (ja) * 1997-09-09 2003-10-14 三菱電機株式会社 レーザダイオード用電源制御装置
JP2000223791A (ja) * 1999-02-04 2000-08-11 Sharp Corp 半導体レーザ装置およびその製造方法
DE19912463A1 (de) * 1999-03-19 2000-09-28 Sensor Line Ges Fuer Optoelekt Verfahren zur Stabilisierung der optischen Ausgangsleistung von Leuchtdioden und Laserdioden
US6868104B2 (en) 2001-09-06 2005-03-15 Finisar Corporation Compact laser package with integrated temperature control
US20050105571A1 (en) * 2002-02-25 2005-05-19 Van Der Kall Herman P. Controlling the temperature of a laser diode in a disc drive
JP4687460B2 (ja) * 2003-07-28 2011-05-25 日亜化学工業株式会社 発光装置、led照明、led発光装置及び発光装置の制御方法
US7701988B2 (en) * 2005-04-20 2010-04-20 Finisar Corporation Optical transmit assembly including thermally isolated laser, temperature sensor, and temperature driver
US7706421B2 (en) 2005-04-20 2010-04-27 Finisar Corporation Temperature sensing device patterned on an electro-optic transducer die
US20060237807A1 (en) * 2005-04-20 2006-10-26 Hosking Lucy G Electro-optic transducer die including a temperature sensing PN junction diode
JP2006324524A (ja) * 2005-05-19 2006-11-30 Sumitomo Electric Ind Ltd 発光モジュール
US20070120138A1 (en) * 2005-11-28 2007-05-31 Visteon Global Technologies, Inc. Multi-layer light emitting device with integrated thermoelectric chip
US7832944B2 (en) 2007-11-08 2010-11-16 Finisar Corporation Optoelectronic subassembly with integral thermoelectric cooler driver
TWI447892B (zh) * 2009-04-20 2014-08-01 財團法人工業技術研究院 發光裝置與其製造方法
US20110222567A1 (en) * 2010-03-09 2011-09-15 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. optoelectronic transistor outline (to)-can header assembly having a configuration that improves heat dissipation and reduces thermal resistance
US8605763B2 (en) * 2010-03-31 2013-12-10 Microsoft Corporation Temperature measurement and control for laser and light-emitting diodes
JP2013110138A (ja) * 2011-11-17 2013-06-06 Sumitomo Electric Ind Ltd 発光モジュール
US9500808B2 (en) * 2012-05-09 2016-11-22 The Boeing Company Ruggedized photonic crystal sensor packaging
JP6356526B2 (ja) * 2014-08-01 2018-07-11 株式会社日立エルジーデータストレージ 光モジュールとその製造方法
US9491824B2 (en) * 2014-08-05 2016-11-08 Svetlana Eden Method and apparatus for precise temperature brightness compensation of LED
CN106229809A (zh) * 2016-09-20 2016-12-14 大连艾科科技开发有限公司 用于半导体激光器的芯片载体
TWI686691B (zh) * 2018-08-16 2020-03-01 緯穎科技服務股份有限公司 電子裝置及被動元件

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1483849A (en) * 1974-09-21 1977-08-24 Nippon Electric Co Semiconductor laser device equipped with a silicon heat sink
DE2737345C2 (de) * 1976-08-20 1991-07-25 Canon K.K., Tokio/Tokyo Halbleiterlaser-Vorrichtung mit einem Peltier-Element
US4215577A (en) * 1978-08-28 1980-08-05 Purdue Research Foundation Utilization of diodes as wide range responsive thermometers
US4238759A (en) * 1978-10-20 1980-12-09 University Of Delaware Monolithic Peltier temperature controlled junction
US4297653A (en) * 1979-04-30 1981-10-27 Xerox Corporation Hybrid semiconductor laser/detectors
GB2054949B (en) * 1979-07-26 1983-04-07 Standard Telephones Cables Ltd Cooling arrangement for laser diode
JPS5678183A (en) * 1979-11-29 1981-06-26 Matsushita Electric Ind Co Ltd Semiconductor laser apparatus
US4399541A (en) * 1981-02-17 1983-08-16 Northern Telecom Limited Light emitting device package having combined heater/cooler
JPS57149784A (en) * 1981-03-11 1982-09-16 Nec Corp Laser diode
FR2504293B1 (fr) * 1981-04-20 1987-01-09 Burr Brown Res Corp Procede et module de regulation de temperature pour un circuit electronique
JPS57186383A (en) * 1981-05-13 1982-11-16 Hitachi Ltd Semiconductor laser device
JPS57188894A (en) * 1981-05-18 1982-11-19 Hitachi Ltd Semiconductor laser device
GB2112565B (en) * 1981-12-24 1985-12-18 Ferranti Ltd Peltier effect temperature control device

Also Published As

Publication number Publication date
GB2131607B (en) 1987-01-14
JPS5994891A (ja) 1984-05-31
KR840006578A (ko) 1984-11-30
FR2536596A1 (fr) 1984-05-25
US4604753A (en) 1986-08-05
GB2131607A (en) 1984-06-20
DE3342111A1 (de) 1984-05-24
GB8330997D0 (en) 1983-12-29
IT8323850A0 (it) 1983-11-23

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19931118