FR2534079B1 - Dispositif laser a semi-conducteur - Google Patents

Dispositif laser a semi-conducteur

Info

Publication number
FR2534079B1
FR2534079B1 FR8315257A FR8315257A FR2534079B1 FR 2534079 B1 FR2534079 B1 FR 2534079B1 FR 8315257 A FR8315257 A FR 8315257A FR 8315257 A FR8315257 A FR 8315257A FR 2534079 B1 FR2534079 B1 FR 2534079B1
Authority
FR
France
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8315257A
Other languages
English (en)
Other versions
FR2534079A1 (fr
Inventor
Tatsuji Oda
Takayoshi Mamine
Osamu Yoneyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2534079A1 publication Critical patent/FR2534079A1/fr
Application granted granted Critical
Publication of FR2534079B1 publication Critical patent/FR2534079B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
FR8315257A 1982-09-30 1983-09-26 Dispositif laser a semi-conducteur Expired FR2534079B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57172202A JPS5961982A (ja) 1982-09-30 1982-09-30 半導体レ−ザ−

Publications (2)

Publication Number Publication Date
FR2534079A1 FR2534079A1 (fr) 1984-04-06
FR2534079B1 true FR2534079B1 (fr) 1987-11-13

Family

ID=15937472

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8315257A Expired FR2534079B1 (fr) 1982-09-30 1983-09-26 Dispositif laser a semi-conducteur

Country Status (7)

Country Link
US (1) US4608695A (fr)
JP (1) JPS5961982A (fr)
KR (1) KR850002706A (fr)
DE (1) DE3335371A1 (fr)
FR (1) FR2534079B1 (fr)
GB (1) GB2128402B (fr)
NL (1) NL8303337A (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60150682A (ja) * 1984-01-17 1985-08-08 Sharp Corp 半導体レ−ザ素子
JPS60192379A (ja) * 1984-03-12 1985-09-30 Mitsubishi Electric Corp 半導体レ−ザ装置
US4686679A (en) * 1984-03-21 1987-08-11 Sharp Kabushiki Kaisha Window VSIS semiconductor laser
JPS61135184A (ja) * 1984-12-05 1986-06-23 Sharp Corp 半導体レ−ザ装置
US4827483A (en) * 1985-08-12 1989-05-02 Hitachi, Ltd. Semiconductor laser device and method of fabricating the same
FR2606223B1 (fr) * 1986-10-29 1996-03-01 Seiko Epson Corp Laser a semiconducteur et son procede de fabrication
US5275968A (en) * 1987-08-05 1994-01-04 Mitsubishi Denki Kabushiki Kaisha Method of producing a semiconductor light emitting device disposed in an insulating substrate
US5194399A (en) * 1987-08-05 1993-03-16 Mitsubishi Denki Kabushiki Kaisha Method of producing a semiconductor light emitting device disposed in an insulating substrate
JPH0716081B2 (ja) * 1987-08-05 1995-02-22 三菱電機株式会社 半導体発光装置
DE3732822A1 (de) * 1987-09-29 1989-04-06 Siemens Ag Laserdiode mit indexfuehrung, insbesondere laserdioden-array mit wellenleiterstruktur
US5351257A (en) * 1993-03-08 1994-09-27 Motorola, Inc. VCSEL with vertical offset operating region providing a lateral waveguide and current limiting and method of fabrication

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3838359A (en) * 1973-11-23 1974-09-24 Bell Telephone Labor Inc Gain asymmetry in heterostructure junction lasers operating in a fundamental transverse mode
US4280106A (en) * 1979-05-15 1981-07-21 Xerox Corporation Striped substrate planar laser
JPS57211791A (en) * 1981-06-24 1982-12-25 Sharp Corp Semiconductor laser element

Also Published As

Publication number Publication date
GB8326055D0 (en) 1983-11-02
JPS5961982A (ja) 1984-04-09
FR2534079A1 (fr) 1984-04-06
DE3335371A1 (de) 1984-04-05
NL8303337A (nl) 1984-04-16
KR850002706A (ko) 1985-05-15
GB2128402A (en) 1984-04-26
GB2128402B (en) 1986-03-05
US4608695A (en) 1986-08-26

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Legal Events

Date Code Title Description
ST Notification of lapse