FR2437083B1 - Dispositif laser a semi-conducteurs - Google Patents

Dispositif laser a semi-conducteurs

Info

Publication number
FR2437083B1
FR2437083B1 FR7923340A FR7923340A FR2437083B1 FR 2437083 B1 FR2437083 B1 FR 2437083B1 FR 7923340 A FR7923340 A FR 7923340A FR 7923340 A FR7923340 A FR 7923340A FR 2437083 B1 FR2437083 B1 FR 2437083B1
Authority
FR
France
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7923340A
Other languages
English (en)
Other versions
FR2437083A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP11467678A external-priority patent/JPS5541741A/ja
Priority claimed from JP3682279U external-priority patent/JPS55137575U/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2437083A1 publication Critical patent/FR2437083A1/fr
Application granted granted Critical
Publication of FR2437083B1 publication Critical patent/FR2437083B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
FR7923340A 1978-09-20 1979-09-19 Dispositif laser a semi-conducteurs Expired FR2437083B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11467678A JPS5541741A (en) 1978-09-20 1978-09-20 Semiconductor laser device
JP3682279U JPS55137575U (fr) 1979-03-23 1979-03-23

Publications (2)

Publication Number Publication Date
FR2437083A1 FR2437083A1 (fr) 1980-04-18
FR2437083B1 true FR2437083B1 (fr) 1986-02-21

Family

ID=26375924

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7923340A Expired FR2437083B1 (fr) 1978-09-20 1979-09-19 Dispositif laser a semi-conducteurs

Country Status (6)

Country Link
US (1) US4315226A (fr)
CA (1) CA1147045A (fr)
DE (1) DE2937930A1 (fr)
FR (1) FR2437083B1 (fr)
GB (1) GB2031644B (fr)
NL (1) NL184715C (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3016778A1 (de) * 1980-04-30 1981-11-05 Siemens AG, 1000 Berlin und 8000 München Laser-diode
US4438446A (en) * 1981-05-29 1984-03-20 Bell Telephone Laboratories, Incorporated Double barrier double heterostructure laser
JPS586191A (ja) * 1981-07-03 1983-01-13 Hitachi Ltd 半導体レ−ザ装置
JPS5947790A (ja) * 1982-09-13 1984-03-17 Hitachi Ltd 半導体レ−ザ装置
US4602371A (en) * 1983-01-17 1986-07-22 Hitachi, Ltd. High output semiconductor laser device utilizing a mesa-stripe optical confinement region
JPS60154689A (ja) * 1984-01-25 1985-08-14 Hitachi Ltd 発光素子およびこれを用いた光通信装置
GB2154059B (en) * 1984-01-25 1987-10-28 Hitachi Ltd Light emitting chip and communication apparatus using the same
US4773074A (en) * 1987-02-02 1988-09-20 University Of Delaware Dual mode laser/detector diode for optical fiber transmission lines
RO102871B1 (en) * 1990-04-20 1993-08-16 Inst De Fizica Si Tehnologia M High power laser diode
US5559819A (en) * 1994-04-19 1996-09-24 Nippondenso Co., Ltd. Semiconductor laser device
RO109906B1 (ro) * 1994-09-09 1995-06-30 Prahova Iulian Basara Petrescu Dioda laser, de mare putere
WO2001018919A1 (fr) * 1999-09-03 2001-03-15 The Regents Of The University Of California Source laser accordable à modulateur optique intégré
US7262061B2 (en) * 1999-12-24 2007-08-28 Roche Diagnostics Gmbh Test element analysis system
US6724795B2 (en) 2002-05-10 2004-04-20 Bookham Technology, Plc Semiconductor laser
JP5916414B2 (ja) * 2012-02-09 2016-05-11 日本オクラロ株式会社 光半導体装置
US10084282B1 (en) 2017-08-14 2018-09-25 The United States Of America As Represented By The Secretary Of The Air Force Fundamental mode operation in broad area quantum cascade lasers
US11031753B1 (en) * 2017-11-13 2021-06-08 The Government Of The United States Of America As Represented By The Secretary Of The Air Force Extracting the fundamental mode in broad area quantum cascade lasers

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5248066B2 (fr) * 1974-03-04 1977-12-07
US3855607A (en) * 1973-05-29 1974-12-17 Rca Corp Semiconductor injection laser with reduced divergence of emitted beam
US4077019A (en) * 1976-01-05 1978-02-28 Xerox Corporation Transverse mode control in double-heterostructure lasers utilizing substrate loss

Also Published As

Publication number Publication date
CA1147045A (fr) 1983-05-24
NL7906948A (nl) 1980-03-24
US4315226A (en) 1982-02-09
GB2031644B (en) 1983-01-19
NL184715C (nl) 1989-10-02
NL184715B (nl) 1989-05-01
DE2937930A1 (de) 1980-04-17
FR2437083A1 (fr) 1980-04-18
GB2031644A (en) 1980-04-23

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