FR2437083A1 - Dispositif laser a semi-conducteurs - Google Patents

Dispositif laser a semi-conducteurs

Info

Publication number
FR2437083A1
FR2437083A1 FR7923340A FR7923340A FR2437083A1 FR 2437083 A1 FR2437083 A1 FR 2437083A1 FR 7923340 A FR7923340 A FR 7923340A FR 7923340 A FR7923340 A FR 7923340A FR 2437083 A1 FR2437083 A1 FR 2437083A1
Authority
FR
France
Prior art keywords
layers
semi
laser device
semiconductor laser
prohibited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7923340A
Other languages
English (en)
Other versions
FR2437083B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP11467678A external-priority patent/JPS5541741A/ja
Priority claimed from JP3682279U external-priority patent/JPS55137575U/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2437083A1 publication Critical patent/FR2437083A1/fr
Application granted granted Critical
Publication of FR2437083B1 publication Critical patent/FR2437083B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

LE DISPOSITIF LASER SEMI-CONDUCTEURS SELON L'INVENTION COMPREND UNE REGION DE CONFINEMENT OPTIQUE CONSTITUEE PAR AU MOINS DES PREMIERE 1, SECONDE 2, TROISIEME 3 ET QUATRIEME COUCHES 4 SEMI-CONDUCTRICES FORMEES SUCCESSIVEMENT SUR UN SUBSTRAT SEMI-CONDUCTEURS 10. LA SECONDE COUCHE PRESENTE UN INDICE DE REFRACTION FAIBLE ET UNE BANDE INTERDITE LARGE PAR RAPPORT A CEUX DE LA TROISIEME COUCHE SEMI-CONDUCTRICE TANDIS QUE LES PREMIERE ET QUATRIEME COUCHES SEMI-CONDUCTRICES D'UN TYPE DE CONDUCTIVITE OPPOSE PRESENTENT DES INDICES DE REFRACTION FAIBLES PAR RAPPORT AUX SECONDE ET TROISIEME COUCHES SEMI-CONDUCTRICES. LES BANDES INTERDITES DES QUATRIEME ET SECONDE COUCHES SONT RELATIVEMENT LARGES PAR RAPPORT A CELLES DE LA TROISIEME COUCHE, LA DIFFERENCE DE LARGEUR DE BANDE INTERDITE DES SECONDE ET TROISIEME COUCHES N'EST PAS INFERIEURE A 0,15EV.
FR7923340A 1978-09-20 1979-09-19 Dispositif laser a semi-conducteurs Expired FR2437083B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11467678A JPS5541741A (en) 1978-09-20 1978-09-20 Semiconductor laser device
JP3682279U JPS55137575U (fr) 1979-03-23 1979-03-23

Publications (2)

Publication Number Publication Date
FR2437083A1 true FR2437083A1 (fr) 1980-04-18
FR2437083B1 FR2437083B1 (fr) 1986-02-21

Family

ID=26375924

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7923340A Expired FR2437083B1 (fr) 1978-09-20 1979-09-19 Dispositif laser a semi-conducteurs

Country Status (6)

Country Link
US (1) US4315226A (fr)
CA (1) CA1147045A (fr)
DE (1) DE2937930A1 (fr)
FR (1) FR2437083B1 (fr)
GB (1) GB2031644B (fr)
NL (1) NL184715C (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0038981A1 (fr) * 1980-04-30 1981-11-04 Siemens Aktiengesellschaft Diode laser
WO1988005970A1 (fr) * 1987-02-02 1988-08-11 University Of Delaware Diode a mode double d'emission/detection d'un faisceau laser pour lignes de transmission a fibres optiques

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4438446A (en) * 1981-05-29 1984-03-20 Bell Telephone Laboratories, Incorporated Double barrier double heterostructure laser
JPS586191A (ja) * 1981-07-03 1983-01-13 Hitachi Ltd 半導体レ−ザ装置
JPS5947790A (ja) * 1982-09-13 1984-03-17 Hitachi Ltd 半導体レ−ザ装置
CA1218136A (fr) * 1983-01-17 1987-02-17 Toshihiro Kawano Dispositif laser a semiconducteur
JPS60154689A (ja) * 1984-01-25 1985-08-14 Hitachi Ltd 発光素子およびこれを用いた光通信装置
GB2154059B (en) * 1984-01-25 1987-10-28 Hitachi Ltd Light emitting chip and communication apparatus using the same
RO102871B1 (en) * 1990-04-20 1993-08-16 Inst De Fizica Si Tehnologia M High power laser diode
US5559819A (en) * 1994-04-19 1996-09-24 Nippondenso Co., Ltd. Semiconductor laser device
RO109906B1 (ro) * 1994-09-09 1995-06-30 Prahova Iulian Basara Petrescu Dioda laser, de mare putere
EP1218973A4 (fr) * 1999-09-03 2005-11-16 Univ California Source laser accordable modulateur optique int gr
JP3655588B2 (ja) * 1999-12-24 2005-06-02 ロッシュ ディアグノスティクス ゲゼルシャフト ミット ベシュレンクテル ハフツング テストエレメント分析システム
US6724795B2 (en) 2002-05-10 2004-04-20 Bookham Technology, Plc Semiconductor laser
JP5916414B2 (ja) * 2012-02-09 2016-05-11 日本オクラロ株式会社 光半導体装置
US10084282B1 (en) 2017-08-14 2018-09-25 The United States Of America As Represented By The Secretary Of The Air Force Fundamental mode operation in broad area quantum cascade lasers
US11031753B1 (en) * 2017-11-13 2021-06-08 The Government Of The United States Of America As Represented By The Secretary Of The Air Force Extracting the fundamental mode in broad area quantum cascade lasers

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3855607A (en) * 1973-05-29 1974-12-17 Rca Corp Semiconductor injection laser with reduced divergence of emitted beam
FR2263624A1 (fr) * 1974-03-04 1975-10-03 Hitachi Ltd
US4077019A (en) * 1976-01-05 1978-02-28 Xerox Corporation Transverse mode control in double-heterostructure lasers utilizing substrate loss

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3855607A (en) * 1973-05-29 1974-12-17 Rca Corp Semiconductor injection laser with reduced divergence of emitted beam
FR2263624A1 (fr) * 1974-03-04 1975-10-03 Hitachi Ltd
US4077019A (en) * 1976-01-05 1978-02-28 Xerox Corporation Transverse mode control in double-heterostructure lasers utilizing substrate loss

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0038981A1 (fr) * 1980-04-30 1981-11-04 Siemens Aktiengesellschaft Diode laser
WO1988005970A1 (fr) * 1987-02-02 1988-08-11 University Of Delaware Diode a mode double d'emission/detection d'un faisceau laser pour lignes de transmission a fibres optiques
US4773074A (en) * 1987-02-02 1988-09-20 University Of Delaware Dual mode laser/detector diode for optical fiber transmission lines

Also Published As

Publication number Publication date
NL7906948A (nl) 1980-03-24
US4315226A (en) 1982-02-09
GB2031644B (en) 1983-01-19
DE2937930A1 (de) 1980-04-17
FR2437083B1 (fr) 1986-02-21
NL184715B (nl) 1989-05-01
NL184715C (nl) 1989-10-02
GB2031644A (en) 1980-04-23
CA1147045A (fr) 1983-05-24

Similar Documents

Publication Publication Date Title
FR2437083A1 (fr) Dispositif laser a semi-conducteurs
FR2450519A1 (fr) Element a semi-conducteur emetteur de lumiere et son procede de fabrication
JPS5515035A (en) Photo detector
GB1482936A (en) Semiconductor lasers
KR940000419B1 (ko) 광학정보기록재생용 광헤드
JPS54106204A (en) Information recording disc of transparent type
JPS577924A (en) Semiconductor device and manufacture thereof
SE8802720D0 (sv) Optik
JPS55115002A (en) Waveguide type photo branching filter
GB1519398A (en) Telecine equipment
GB1323321A (en) Light beam deflecting device
JPS57113292A (en) Semiconductor light sensing device
JPS6448021A (en) Optical device
EP0161097A3 (fr) Dispositifs semi-conducteurs à verrouillage optique de phase
JPS5331105A (en) Information recording member
FR2430110A1 (fr) Dispositif laser semi-conducteur et procede de fabrication de ce dernier
SE8102249L (sv) Steglost variabel ljusforsvagare
JPS5690439A (en) Material for reproducing optical signal records
JPS5483810A (en) Optical recording method
JPS5593274A (en) Photo-detector for optical integrated circuit
US3530259A (en) Electroluminescent diode and sound recording system with controlled maximum light intensity
KR950034943A (ko) 광디바이스
JPS5730381A (en) Schottky type photodetector
JPS5727088A (en) Semiconductor laser device
JPS56155940A (en) Optically recording medium