FR2430110A1 - Dispositif laser semi-conducteur et procede de fabrication de ce dernier - Google Patents

Dispositif laser semi-conducteur et procede de fabrication de ce dernier

Info

Publication number
FR2430110A1
FR2430110A1 FR7916716A FR7916716A FR2430110A1 FR 2430110 A1 FR2430110 A1 FR 2430110A1 FR 7916716 A FR7916716 A FR 7916716A FR 7916716 A FR7916716 A FR 7916716A FR 2430110 A1 FR2430110 A1 FR 2430110A1
Authority
FR
France
Prior art keywords
semiconductor
semiconductor layer
laser device
semiconductor laser
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7916716A
Other languages
English (en)
Other versions
FR2430110B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2430110A1 publication Critical patent/FR2430110A1/fr
Application granted granted Critical
Publication of FR2430110B1 publication Critical patent/FR2430110B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

Dispositif laser semi-conducteur comprenant un assemblage semi-conducteur qui comporte un substrat de croissance cristalline à la surface duquel se trouve une seconde couche semiconductrice, une première couche semi-conductrice à région active formée sur ledit substrat et une troisième couche semiconductrice, l'indice de réfraction de chacune des seconde et troisième couches semi-conductrices étant inférieur à celui de la première couche et leurs intervalles de bande plus larges que celui de cette première couche semi-conductrice, une premiere électrode formée sur une surface dudit assemblage semi-conducteur du côté de la troisième couche semi-conductrice, une seconde électrode formée sur une surface de l'assemblage semi-conducteur du côté du substrat, et au moins un système pour réaliser une réaction optique destinée à produire des radiations optiques.
FR7916716A 1978-06-30 1979-06-28 Dispositif laser semi-conducteur et procede de fabrication de ce dernier Expired FR2430110B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7867478A JPS5522807A (en) 1978-06-30 1978-06-30 Semiconductor laser element and manufacturing of the same

Publications (2)

Publication Number Publication Date
FR2430110A1 true FR2430110A1 (fr) 1980-01-25
FR2430110B1 FR2430110B1 (fr) 1986-01-24

Family

ID=13668405

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7916716A Expired FR2430110B1 (fr) 1978-06-30 1979-06-28 Dispositif laser semi-conducteur et procede de fabrication de ce dernier

Country Status (7)

Country Link
US (1) US4329658A (fr)
JP (1) JPS5522807A (fr)
CA (1) CA1125898A (fr)
DE (1) DE2926367C2 (fr)
FR (1) FR2430110B1 (fr)
GB (1) GB2025123B (fr)
NL (1) NL7905104A (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2495850A1 (fr) * 1980-12-05 1982-06-11 Thomson Csf Laser a semiconducteur a grande longueur d'onde
JPS59149558U (ja) * 1983-03-28 1984-10-05 スズキ株式会社 コンベヤにおける搬送台
JPS6042890A (ja) * 1983-08-18 1985-03-07 Mitsubishi Electric Corp 面発光形半導体レ−ザ及びその製造方法
US9882348B2 (en) * 2013-06-17 2018-01-30 Elio Battista Porcelli Induction of force performed by the semiconductor laser diodes

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3780358A (en) * 1970-10-13 1973-12-18 Int Standard Electric Corp Gallium arsenide lasers
US3883821A (en) * 1974-01-17 1975-05-13 Bell Telephone Labor Inc Single transverse mode operation in double heterostructure junction lasers having an active layer of nonuniform thickness

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51111344A (en) 1975-03-26 1976-10-01 Hitachi Ltd A method of diffraction grating
US4033796A (en) * 1975-06-23 1977-07-05 Xerox Corporation Method of making buried-heterostructure diode injection laser
US3978428A (en) * 1975-06-23 1976-08-31 Xerox Corporation Buried-heterostructure diode injection laser
GB1530323A (en) * 1975-12-22 1978-10-25 Standard Telephones Cables Ltd Semiconductor waveguide structures
US4099999A (en) * 1977-06-13 1978-07-11 Xerox Corporation Method of making etched-striped substrate planar laser
EP0000557B1 (fr) * 1977-08-01 1981-12-30 Hitachi, Ltd. Laser à semi-conducteur

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3780358A (en) * 1970-10-13 1973-12-18 Int Standard Electric Corp Gallium arsenide lasers
US3883821A (en) * 1974-01-17 1975-05-13 Bell Telephone Labor Inc Single transverse mode operation in double heterostructure junction lasers having an active layer of nonuniform thickness

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IEEE JOURNAL OF QUANTUM ELECTRONICS, vol.QE-13, no.8, août 1977, New York (US) *

Also Published As

Publication number Publication date
JPS5522807A (en) 1980-02-18
FR2430110B1 (fr) 1986-01-24
CA1125898A (fr) 1982-06-15
DE2926367C2 (de) 1986-05-15
GB2025123B (en) 1982-06-16
GB2025123A (en) 1980-01-16
JPS5741834B2 (fr) 1982-09-04
US4329658A (en) 1982-05-11
NL7905104A (nl) 1980-01-03
DE2926367A1 (de) 1980-01-03

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Legal Events

Date Code Title Description
ST Notification of lapse