FR2430110B1 - Dispositif laser semi-conducteur et procede de fabrication de ce dernier - Google Patents
Dispositif laser semi-conducteur et procede de fabrication de ce dernierInfo
- Publication number
- FR2430110B1 FR2430110B1 FR7916716A FR7916716A FR2430110B1 FR 2430110 B1 FR2430110 B1 FR 2430110B1 FR 7916716 A FR7916716 A FR 7916716A FR 7916716 A FR7916716 A FR 7916716A FR 2430110 B1 FR2430110 B1 FR 2430110B1
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- semiconductor laser
- laser device
- semiconductor
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7867478A JPS5522807A (en) | 1978-06-30 | 1978-06-30 | Semiconductor laser element and manufacturing of the same |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2430110A1 FR2430110A1 (fr) | 1980-01-25 |
FR2430110B1 true FR2430110B1 (fr) | 1986-01-24 |
Family
ID=13668405
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7916716A Expired FR2430110B1 (fr) | 1978-06-30 | 1979-06-28 | Dispositif laser semi-conducteur et procede de fabrication de ce dernier |
Country Status (7)
Country | Link |
---|---|
US (1) | US4329658A (fr) |
JP (1) | JPS5522807A (fr) |
CA (1) | CA1125898A (fr) |
DE (1) | DE2926367C2 (fr) |
FR (1) | FR2430110B1 (fr) |
GB (1) | GB2025123B (fr) |
NL (1) | NL7905104A (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2495850A1 (fr) * | 1980-12-05 | 1982-06-11 | Thomson Csf | Laser a semiconducteur a grande longueur d'onde |
JPS59149558U (ja) * | 1983-03-28 | 1984-10-05 | スズキ株式会社 | コンベヤにおける搬送台 |
JPS6042890A (ja) * | 1983-08-18 | 1985-03-07 | Mitsubishi Electric Corp | 面発光形半導体レ−ザ及びその製造方法 |
US9882348B2 (en) * | 2013-06-17 | 2018-01-30 | Elio Battista Porcelli | Induction of force performed by the semiconductor laser diodes |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1273284A (en) * | 1970-10-13 | 1972-05-03 | Standard Telephones Cables Ltd | Improvements in or relating to injection lasers |
US3883821A (en) * | 1974-01-17 | 1975-05-13 | Bell Telephone Labor Inc | Single transverse mode operation in double heterostructure junction lasers having an active layer of nonuniform thickness |
JPS51111344A (en) | 1975-03-26 | 1976-10-01 | Hitachi Ltd | A method of diffraction grating |
US4033796A (en) * | 1975-06-23 | 1977-07-05 | Xerox Corporation | Method of making buried-heterostructure diode injection laser |
US3978428A (en) * | 1975-06-23 | 1976-08-31 | Xerox Corporation | Buried-heterostructure diode injection laser |
GB1530323A (en) * | 1975-12-22 | 1978-10-25 | Standard Telephones Cables Ltd | Semiconductor waveguide structures |
US4099999A (en) * | 1977-06-13 | 1978-07-11 | Xerox Corporation | Method of making etched-striped substrate planar laser |
EP0000557B1 (fr) * | 1977-08-01 | 1981-12-30 | Hitachi, Ltd. | Laser à semi-conducteur |
-
1978
- 1978-06-30 JP JP7867478A patent/JPS5522807A/ja active Granted
-
1979
- 1979-06-22 US US06/051,144 patent/US4329658A/en not_active Expired - Lifetime
- 1979-06-28 FR FR7916716A patent/FR2430110B1/fr not_active Expired
- 1979-06-29 CA CA330,850A patent/CA1125898A/fr not_active Expired
- 1979-06-29 GB GB7922668A patent/GB2025123B/en not_active Expired
- 1979-06-29 NL NL7905104A patent/NL7905104A/nl not_active Application Discontinuation
- 1979-06-29 DE DE2926367A patent/DE2926367C2/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
CA1125898A (fr) | 1982-06-15 |
US4329658A (en) | 1982-05-11 |
FR2430110A1 (fr) | 1980-01-25 |
JPS5741834B2 (fr) | 1982-09-04 |
GB2025123B (en) | 1982-06-16 |
GB2025123A (en) | 1980-01-16 |
DE2926367A1 (de) | 1980-01-03 |
NL7905104A (nl) | 1980-01-03 |
DE2926367C2 (de) | 1986-05-15 |
JPS5522807A (en) | 1980-02-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |