FR2524709B1 - Dispositif a semi-conducteur et procede pour sa fabrication - Google Patents
Dispositif a semi-conducteur et procede pour sa fabricationInfo
- Publication number
- FR2524709B1 FR2524709B1 FR8305262A FR8305262A FR2524709B1 FR 2524709 B1 FR2524709 B1 FR 2524709B1 FR 8305262 A FR8305262 A FR 8305262A FR 8305262 A FR8305262 A FR 8305262A FR 2524709 B1 FR2524709 B1 FR 2524709B1
- Authority
- FR
- France
- Prior art keywords
- production
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/103—Mask, dual function, e.g. diffusion and oxidation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/105—Masks, metal
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5138282A JPS58175869A (ja) | 1982-03-31 | 1982-03-31 | 半導体装置の製造方法 |
JP5138382A JPS5941869A (ja) | 1982-03-31 | 1982-03-31 | 半導体装置の製法 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2524709A1 FR2524709A1 (fr) | 1983-10-07 |
FR2524709B1 true FR2524709B1 (fr) | 1985-12-13 |
Family
ID=26391919
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8305262A Expired FR2524709B1 (fr) | 1982-03-31 | 1983-03-30 | Dispositif a semi-conducteur et procede pour sa fabrication |
Country Status (3)
Country | Link |
---|---|
US (1) | US4557036A (fr) |
DE (1) | DE3311635A1 (fr) |
FR (1) | FR2524709B1 (fr) |
Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6116571A (ja) * | 1984-07-03 | 1986-01-24 | Ricoh Co Ltd | 半導体装置の製造方法 |
JPH0628315B2 (ja) * | 1984-12-24 | 1994-04-13 | 株式会社日立製作所 | 半導体装置 |
DE3689735T2 (de) * | 1985-08-02 | 1994-06-30 | Semiconductor Energy Lab | Verfahren und Gerät zur Herstellung von Halbleitervorrichtungen. |
US5296405A (en) * | 1985-08-02 | 1994-03-22 | Semiconductor Energy Laboratory Co.., Ltd. | Method for photo annealing non-single crystalline semiconductor films |
US5753542A (en) | 1985-08-02 | 1998-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for crystallizing semiconductor material without exposing it to air |
JPS62177909A (ja) * | 1986-01-31 | 1987-08-04 | Hitachi Ltd | 半導体装置の製造方法 |
JP2910064B2 (ja) * | 1989-07-06 | 1999-06-23 | ソニー株式会社 | 半導体装置の製造方法 |
US5194405A (en) * | 1989-07-06 | 1993-03-16 | Sony Corporation | Method of manufacturing a semiconductor device having a silicide layer |
US5093275A (en) * | 1989-09-22 | 1992-03-03 | The Board Of Regents, The University Of Texas System | Method for forming hot-carrier suppressed sub-micron MISFET device |
US5012306A (en) * | 1989-09-22 | 1991-04-30 | Board Of Regents, The University Of Texas System | Hot-carrier suppressed sub-micron MISFET device |
US5126283A (en) * | 1990-05-21 | 1992-06-30 | Motorola, Inc. | Process for the selective encapsulation of an electrically conductive structure in a semiconductor device |
US5585288A (en) * | 1990-07-16 | 1996-12-17 | Raytheon Company | Digital MMIC/analog MMIC structures and process |
JP2999271B2 (ja) * | 1990-12-10 | 2000-01-17 | 株式会社半導体エネルギー研究所 | 表示装置 |
US6028333A (en) * | 1991-02-16 | 2000-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors |
JP3556679B2 (ja) | 1992-05-29 | 2004-08-18 | 株式会社半導体エネルギー研究所 | 電気光学装置 |
US5289030A (en) | 1991-03-06 | 1994-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with oxide layer |
JP2794678B2 (ja) * | 1991-08-26 | 1998-09-10 | 株式会社 半導体エネルギー研究所 | 絶縁ゲイト型半導体装置およびその作製方法 |
USRE36314E (en) * | 1991-03-06 | 1999-09-28 | Semiconductor Energy Laboratory Co., Ltd. | Insulated gate field effect semiconductor devices having a LDD region and an anodic oxide film of a gate electrode |
JP2794499B2 (ja) | 1991-03-26 | 1998-09-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2717237B2 (ja) * | 1991-05-16 | 1998-02-18 | 株式会社 半導体エネルギー研究所 | 絶縁ゲイト型半導体装置およびその作製方法 |
US5578520A (en) * | 1991-05-28 | 1996-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for annealing a semiconductor |
US6975296B1 (en) | 1991-06-14 | 2005-12-13 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
US6778231B1 (en) | 1991-06-14 | 2004-08-17 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical display device |
US5414442A (en) * | 1991-06-14 | 1995-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving the same |
US5766344A (en) * | 1991-09-21 | 1998-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming a semiconductor |
TW223178B (en) * | 1992-03-27 | 1994-05-01 | Semiconductor Energy Res Co Ltd | Semiconductor device and its production method |
US6624450B1 (en) | 1992-03-27 | 2003-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
JP2885616B2 (ja) * | 1992-07-31 | 1999-04-26 | 株式会社東芝 | 半導体装置およびその製造方法 |
US5561082A (en) * | 1992-07-31 | 1996-10-01 | Kabushiki Kaisha Toshiba | Method for forming an electrode and/or wiring layer by reducing copper oxide or silver oxide |
US7097712B1 (en) | 1992-12-04 | 2006-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for processing a semiconductor |
TW297142B (fr) | 1993-09-20 | 1997-02-01 | Handotai Energy Kenkyusho Kk | |
CN100367461C (zh) | 1993-11-05 | 2008-02-06 | 株式会社半导体能源研究所 | 一种制造薄膜晶体管和电子器件的方法 |
US6897100B2 (en) | 1993-11-05 | 2005-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device |
US6747627B1 (en) | 1994-04-22 | 2004-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Redundancy shift register circuit for driver circuit in active matrix type liquid crystal display device |
JP3402400B2 (ja) | 1994-04-22 | 2003-05-06 | 株式会社半導体エネルギー研究所 | 半導体集積回路の作製方法 |
US5633202A (en) * | 1994-09-30 | 1997-05-27 | Intel Corporation | High tensile nitride layer |
TWI228625B (en) * | 1995-11-17 | 2005-03-01 | Semiconductor Energy Lab | Display device |
US6800875B1 (en) | 1995-11-17 | 2004-10-05 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix electro-luminescent display device with an organic leveling layer |
JPH09146108A (ja) * | 1995-11-17 | 1997-06-06 | Semiconductor Energy Lab Co Ltd | 液晶表示装置およびその駆動方法 |
TW309633B (fr) * | 1995-12-14 | 1997-07-01 | Handotai Energy Kenkyusho Kk | |
GB2342775B (en) * | 1998-07-06 | 2000-12-27 | United Microelectronics Corp | Method fabricating local interconnect |
US6528856B1 (en) * | 1998-12-15 | 2003-03-04 | Intel Corporation | High dielectric constant metal oxide gate dielectrics |
US6475836B1 (en) | 1999-03-29 | 2002-11-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US6312378B1 (en) * | 1999-06-03 | 2001-11-06 | Cardiac Intelligence Corporation | System and method for automated collection and analysis of patient information retrieved from an implantable medical device for remote patient care |
US6228777B1 (en) | 1999-06-08 | 2001-05-08 | Intel Corporation | Integrated circuit with borderless contacts |
DE10010821A1 (de) * | 2000-02-29 | 2001-09-13 | Infineon Technologies Ag | Verfahren zur Erhöhung der Kapazität in einem Speichergraben und Grabenkondensator mit erhöhter Kapazität |
TW531803B (en) * | 2000-08-31 | 2003-05-11 | Agere Syst Guardian Corp | Electronic circuit structure with improved dielectric properties |
AT4290U1 (de) * | 2000-12-27 | 2001-05-25 | Plansee Ag | Verfahren zur herabsetzung des spezifischen widerstandes einer elektrisch leitenden schicht |
US7144783B2 (en) * | 2004-04-30 | 2006-12-05 | Intel Corporation | Reducing gate dielectric material to form a metal gate electrode extension |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1244013A (en) * | 1967-10-13 | 1971-08-25 | Gen Electric | Fabrication of semiconductor devices |
US3566517A (en) * | 1967-10-13 | 1971-03-02 | Gen Electric | Self-registered ig-fet devices and method of making same |
US3614829A (en) * | 1969-12-08 | 1971-10-26 | Gen Electric | Method of forming high stability self-registered field effect transistors |
US3679492A (en) * | 1970-03-23 | 1972-07-25 | Ibm | Process for making mosfet's |
US3967981A (en) * | 1971-01-14 | 1976-07-06 | Shumpei Yamazaki | Method for manufacturing a semiconductor field effort transistor |
US3966501A (en) * | 1973-03-23 | 1976-06-29 | Mitsubishi Denki Kabushiki Kaisha | Process of producing semiconductor devices |
US4149307A (en) * | 1977-12-28 | 1979-04-17 | Hughes Aircraft Company | Process for fabricating insulated-gate field-effect transistors with self-aligned contacts |
GB2061615A (en) * | 1979-10-25 | 1981-05-13 | Gen Electric | Composite conductors for integrated circuits |
JPS5679449A (en) * | 1979-11-30 | 1981-06-30 | Mitsubishi Electric Corp | Production of semiconductor device |
-
1983
- 1983-03-25 US US06/479,135 patent/US4557036A/en not_active Expired - Fee Related
- 1983-03-30 FR FR8305262A patent/FR2524709B1/fr not_active Expired
- 1983-03-30 DE DE19833311635 patent/DE3311635A1/de active Granted
Also Published As
Publication number | Publication date |
---|---|
US4557036A (en) | 1985-12-10 |
DE3311635A1 (de) | 1983-10-13 |
FR2524709A1 (fr) | 1983-10-07 |
DE3311635C2 (fr) | 1988-09-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TP | Transmission of property | ||
ST | Notification of lapse |