GB1244013A - Fabrication of semiconductor devices - Google Patents
Fabrication of semiconductor devicesInfo
- Publication number
- GB1244013A GB1244013A GB4611768A GB4611768A GB1244013A GB 1244013 A GB1244013 A GB 1244013A GB 4611768 A GB4611768 A GB 4611768A GB 4611768 A GB4611768 A GB 4611768A GB 1244013 A GB1244013 A GB 1244013A
- Authority
- GB
- United Kingdom
- Prior art keywords
- metal
- layer
- semi
- insulation
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052751 metal Inorganic materials 0.000 abstract 8
- 239000002184 metal Substances 0.000 abstract 8
- 238000009413 insulation Methods 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000003990 capacitor Substances 0.000 abstract 2
- 239000012212 insulator Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
1,244,013. Semi-conductor devices; printed circuits; capacitors. GENERAL ELECTRIC CO. 27 Sept., 1968 [13 Oct., 1967], No. 46117/68. Headings H1K, H1M and H1R. The Specification relates to metal layers on passivated semi-conductor surfaces. A metal layer is formed over a layer of passivating insulation and is then enclosed by a second layer of insulation through which extends a means for making contact to the metal layer. The metal and the insulators are so chosen that the structure may if necessary be processed at, for example, normal inpurity diffusion temperatures without their mutual reaction. The metal may be tungsten or molybdenum, and the insulator may be silicon dioxide, silicon nitride, or silicon oxynitride. The semi-conductor substrate may be of silicon, germanium, or gallium arsenide. The buried metal film maybe the gate electrode of an IGFET or a cross-under connector for circuitry on the upper surface of the second insulating layer, or two superposed buried metal films separated by insulation may be provided to form a capacitor or transmission line. Processing details are given. Contact to the buried metal film is provided by deposited aluminium.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US67522567A | 1967-10-13 | 1967-10-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1244013A true GB1244013A (en) | 1971-08-25 |
Family
ID=24709560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4611768A Expired GB1244013A (en) | 1967-10-13 | 1968-09-27 | Fabrication of semiconductor devices |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5334472B1 (en) |
| CH (1) | CH493936A (en) |
| DE (2) | DE6802214U (en) |
| FR (1) | FR1587465A (en) |
| GB (1) | GB1244013A (en) |
| NL (1) | NL158323C (en) |
| SE (1) | SE402503B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8004088B2 (en) | 2000-10-18 | 2011-08-23 | Megica Corporation | Post passivation interconnection schemes on top of IC chip |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2081248A1 (en) * | 1970-03-23 | 1971-12-03 | Sescosem | Silicon intergrated circuits - with high parasitic mist threshold voltage by localized diffusion |
| JPS5193874A (en) * | 1975-02-15 | 1976-08-17 | Handotaisochino seizohoho | |
| US4557036A (en) * | 1982-03-31 | 1985-12-10 | Nippon Telegraph & Telephone Public Corp. | Semiconductor device and process for manufacturing the same |
| US4638400A (en) * | 1985-10-24 | 1987-01-20 | General Electric Company | Refractory metal capacitor structures, particularly for analog integrated circuit devices |
-
1968
- 1968-09-27 GB GB4611768A patent/GB1244013A/en not_active Expired
- 1968-10-07 NL NL6814320A patent/NL158323C/en not_active IP Right Cessation
- 1968-10-08 JP JP7343468A patent/JPS5334472B1/ja active Pending
- 1968-10-10 CH CH1514368A patent/CH493936A/en not_active IP Right Cessation
- 1968-10-11 FR FR1587465D patent/FR1587465A/fr not_active Expired
- 1968-10-14 DE DE19686802214 patent/DE6802214U/en not_active Expired
- 1968-10-14 SE SE1383768A patent/SE402503B/en unknown
- 1968-10-14 DE DE19681803025 patent/DE1803025B2/en not_active Ceased
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8004088B2 (en) | 2000-10-18 | 2011-08-23 | Megica Corporation | Post passivation interconnection schemes on top of IC chip |
| US8188603B2 (en) | 2000-10-18 | 2012-05-29 | Megica Corporation | Post passivation interconnection schemes on top of IC chip |
| US8435883B2 (en) | 2000-10-18 | 2013-05-07 | Megica Corporation | Post passivation interconnection schemes on top of IC chips |
| US8461686B2 (en) | 2000-10-18 | 2013-06-11 | Megica Corporation | Post passivation interconnection schemes on top of IC chip |
| US8482127B2 (en) | 2000-10-18 | 2013-07-09 | Megica Corporation | Post passivation interconnection schemes on top of IC chip |
| US8492900B2 (en) | 2000-10-18 | 2013-07-23 | Megica Corporation | Post passivation interconnection schemes on top of IC chip |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1803025A1 (en) | 1969-09-04 |
| NL6814320A (en) | 1969-04-15 |
| FR1587465A (en) | 1970-03-20 |
| SE402503B (en) | 1978-07-03 |
| DE1803025B2 (en) | 1972-06-15 |
| CH493936A (en) | 1970-07-15 |
| NL158323B (en) | 1978-10-16 |
| JPS5334472B1 (en) | 1978-09-20 |
| NL158323C (en) | 1982-02-16 |
| DE6802214U (en) | 1972-04-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3475234A (en) | Method for making mis structures | |
| GB1037519A (en) | Electrical circuits | |
| GB1208574A (en) | Methods of manufacturing semiconductor devices | |
| KR960032616A (en) | Method of manufacturing self-aligned contact hole for semiconductor device | |
| GB1422033A (en) | Method of manufacturing a semiconductor device | |
| GB1244013A (en) | Fabrication of semiconductor devices | |
| US3691627A (en) | Method of fabricating buried metallic film devices | |
| EP0081226A3 (en) | Method of making semiconductor device | |
| US4123300A (en) | Integrated circuit process utilizing lift-off techniques | |
| GB1255976A (en) | Semiconductor devices and circuit arrangements | |
| GB1179983A (en) | Method of Fabricating Semiconductor Devices. | |
| US4124863A (en) | Positively biased substrate IC with thermal oxide guard ring | |
| JPS5890755A (en) | Semiconductor device | |
| US3421205A (en) | Fabrication of structures for semiconductor integrated circuits | |
| US3703667A (en) | Shaped riser on substrate step for promoting metal film continuity | |
| JPS6262466B2 (en) | ||
| JPS5461490A (en) | Multi-layer wiring forming method in semiconductor device | |
| KR930011537B1 (en) | Manufacturing method of semiconductor device | |
| JPS5740967A (en) | Integrated circuit device | |
| KR940008047A (en) | Method and apparatus for removing metal blanks in metal lines of semiconductor devices | |
| JPS56138946A (en) | Semiconductor device | |
| JPS56155536A (en) | Semiconductor device | |
| KR100203301B1 (en) | Method of forming interlayer insulator in semiconductor device | |
| ES346214A1 (en) | Improvements in and relating to semiconductor devices | |
| JPS6455853A (en) | Semiconductor device and manufacture thereof |