JPS56155536A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56155536A
JPS56155536A JP5912880A JP5912880A JPS56155536A JP S56155536 A JPS56155536 A JP S56155536A JP 5912880 A JP5912880 A JP 5912880A JP 5912880 A JP5912880 A JP 5912880A JP S56155536 A JPS56155536 A JP S56155536A
Authority
JP
Japan
Prior art keywords
oxide film
insulating film
film
substrate
wiring layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5912880A
Other languages
Japanese (ja)
Other versions
JPS6217869B2 (en
Inventor
Nobuo Uematsu
Koichi Tanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
NEC Engineering Ltd
Original Assignee
NEC Corp
NEC Engineering Ltd
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, NEC Engineering Ltd, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5912880A priority Critical patent/JPS56155536A/en
Publication of JPS56155536A publication Critical patent/JPS56155536A/en
Publication of JPS6217869B2 publication Critical patent/JPS6217869B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Abstract

PURPOSE:To prevent the dielectric breakdown on the insulating film (SiO2) in an MOS thpe structure by a method wherein the third insulating film is provided on the boundary sextion where the first and the second insulating films, having a different thickness, are connected on a level, and a metallic wiring layer is formed on the upper section of the third insulating film. CONSTITUTION:For instance, an N<+> diffusion layer 3 is formed on the N type epitaxial layer 2 provided on a P type Si substrate 1 and an MOS type capacity is formed using the diffusion layer 3 and the metallic wiring layer provided through the intermediary of a thin oxide film 5. At the boundary section A where the thin oxide film 5 comes in contact with a thick field oxide film 7 on the substrate, a polymide or an Si nitride film 8, for example, are provided and it is interposed between the wiring layer 6. This insulating film is, after it has been deposited on the whole surface of the substrate through the intermediary of oxide films 5 and 6, is formed by performing a selective etching. Through these procedures, the dielectric strength at the boundary section A of the oxide film is intensified and the breakdown of the oxide film due to the static electricity and the abnormal voltage applied to the circuit from outside can be prevented.
JP5912880A 1980-05-02 1980-05-02 Semiconductor device Granted JPS56155536A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5912880A JPS56155536A (en) 1980-05-02 1980-05-02 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5912880A JPS56155536A (en) 1980-05-02 1980-05-02 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS56155536A true JPS56155536A (en) 1981-12-01
JPS6217869B2 JPS6217869B2 (en) 1987-04-20

Family

ID=13104355

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5912880A Granted JPS56155536A (en) 1980-05-02 1980-05-02 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56155536A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4990984A (en) * 1987-11-27 1991-02-05 Nec Corporation Semiconductor device having protective element

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01105453U (en) * 1987-12-30 1989-07-17
JPH0649180Y2 (en) * 1988-03-10 1994-12-14 ライオン株式会社 Algae farming equipment

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5054288A (en) * 1973-09-10 1975-05-13
JPS5375777A (en) * 1976-12-16 1978-07-05 Nec Corp Mos type semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5054288A (en) * 1973-09-10 1975-05-13
JPS5375777A (en) * 1976-12-16 1978-07-05 Nec Corp Mos type semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4990984A (en) * 1987-11-27 1991-02-05 Nec Corporation Semiconductor device having protective element

Also Published As

Publication number Publication date
JPS6217869B2 (en) 1987-04-20

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