FR2462023B1 - Procede de fabrication d'un dispositif semi-conducteur - Google Patents

Procede de fabrication d'un dispositif semi-conducteur

Info

Publication number
FR2462023B1
FR2462023B1 FR8015602A FR8015602A FR2462023B1 FR 2462023 B1 FR2462023 B1 FR 2462023B1 FR 8015602 A FR8015602 A FR 8015602A FR 8015602 A FR8015602 A FR 8015602A FR 2462023 B1 FR2462023 B1 FR 2462023B1
Authority
FR
France
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8015602A
Other languages
English (en)
Other versions
FR2462023A1 (fr
Inventor
James Edgar Scheppele
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northrop Grumman Space and Mission Systems Corp
Original Assignee
TRW Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TRW Inc filed Critical TRW Inc
Publication of FR2462023A1 publication Critical patent/FR2462023A1/fr
Application granted granted Critical
Publication of FR2462023B1 publication Critical patent/FR2462023B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
FR8015602A 1979-07-16 1980-07-15 Procede de fabrication d'un dispositif semi-conducteur Expired FR2462023B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/057,694 US4234357A (en) 1979-07-16 1979-07-16 Process for manufacturing emitters by diffusion from polysilicon

Publications (2)

Publication Number Publication Date
FR2462023A1 FR2462023A1 (fr) 1981-02-06
FR2462023B1 true FR2462023B1 (fr) 1986-09-12

Family

ID=22012185

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8015602A Expired FR2462023B1 (fr) 1979-07-16 1980-07-15 Procede de fabrication d'un dispositif semi-conducteur

Country Status (6)

Country Link
US (1) US4234357A (fr)
JP (1) JPS5617066A (fr)
DE (1) DE3024084A1 (fr)
FR (1) FR2462023B1 (fr)
GB (1) GB2054265B (fr)
NL (1) NL8004099A (fr)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1129118A (fr) * 1978-07-19 1982-08-03 Tetsushi Sakai Dispositifs a semi-conducteurs et methode de fabrication
US4452645A (en) * 1979-11-13 1984-06-05 International Business Machines Corporation Method of making emitter regions by implantation through a non-monocrystalline layer
US4534806A (en) * 1979-12-03 1985-08-13 International Business Machines Corporation Method for manufacturing vertical PNP transistor with shallow emitter
US4411708A (en) * 1980-08-25 1983-10-25 Trw Inc. Method of making precision doped polysilicon vertical ballast resistors by multiple implantations
FR2560440B1 (fr) * 1984-02-28 1986-06-13 Telemecanique Electrique Structure integree de thyristor a auto-allumage pour commutation par tout ou rien de courants forts, et son circuit de commande
JPS60220975A (ja) * 1984-04-18 1985-11-05 Toshiba Corp ＧａＡｓ電界効果トランジスタ及びその製造方法
JPS63136668A (ja) * 1986-11-28 1988-06-08 Fuji Electric Co Ltd 半導体装置の製造方法
JPS63263070A (ja) * 1987-04-20 1988-10-31 Hiroko Aizawa 御通
US4916083A (en) * 1987-05-11 1990-04-10 International Business Machines Corporation High performance sidewall emitter transistor
US4847670A (en) * 1987-05-11 1989-07-11 International Business Machines Corporation High performance sidewall emitter transistor
JPH0748502B2 (ja) * 1988-05-13 1995-05-24 三菱電機株式会社 半導体装置の製造方法
US6143655A (en) 1998-02-25 2000-11-07 Micron Technology, Inc. Methods and structures for silver interconnections in integrated circuits
US6121126A (en) 1998-02-25 2000-09-19 Micron Technologies, Inc. Methods and structures for metal interconnections in integrated circuits
US6492694B2 (en) 1998-02-27 2002-12-10 Micron Technology, Inc. Highly conductive composite polysilicon gate for CMOS integrated circuits
US6815303B2 (en) * 1998-04-29 2004-11-09 Micron Technology, Inc. Bipolar transistors with low-resistance emitter contacts
US7672558B2 (en) * 2004-01-12 2010-03-02 Honeywell International, Inc. Silicon optical device
US7362443B2 (en) 2005-11-17 2008-04-22 Honeywell International Inc. Optical gyro with free space resonator and method for sensing inertial rotation rate
US7463360B2 (en) * 2006-04-18 2008-12-09 Honeywell International Inc. Optical resonator gyro with integrated external cavity beam generator
US7454102B2 (en) 2006-04-26 2008-11-18 Honeywell International Inc. Optical coupling structure
US7535576B2 (en) * 2006-05-15 2009-05-19 Honeywell International, Inc. Integrated optical rotation sensor and method for sensing rotation rate
EP2803083A4 (fr) * 2012-01-10 2014-12-31 Hzo Inc Masques servant à l'application de revêtements de protection sur des ensembles électroniques, ensembles électroniques masqués, et procédés associés
WO2013192222A2 (fr) 2012-06-18 2013-12-27 Hzo, Inc. Systèmes et procédés pour appliquer des revêtements de protection sur des surfaces internes de dispositifs électroniques complètement assemblés
US10449568B2 (en) 2013-01-08 2019-10-22 Hzo, Inc. Masking substrates for application of protective coatings
US9894776B2 (en) 2013-01-08 2018-02-13 Hzo, Inc. System for refurbishing or remanufacturing an electronic device
WO2014110039A2 (fr) 2013-01-08 2014-07-17 Hzo, Inc. Retrait de parties sélectionnées de revêtements protecteurs de substrats

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3807038A (en) * 1969-05-22 1974-04-30 Mitsubishi Electric Corp Process of producing semiconductor devices
US3753807A (en) * 1972-02-24 1973-08-21 Bell Canada Northern Electric Manufacture of bipolar semiconductor devices
US3912557A (en) * 1974-05-02 1975-10-14 Trw Inc Method for fabricating planar semiconductor devices
US4074304A (en) * 1974-10-04 1978-02-14 Nippon Electric Company, Ltd. Semiconductor device having a miniature junction area and process for fabricating same
US3929529A (en) * 1974-12-09 1975-12-30 Ibm Method for gettering contaminants in monocrystalline silicon
JPS5324277A (en) * 1976-08-18 1978-03-06 Nec Corp Semiconductor devic e and its production
JPS5382275A (en) * 1976-12-28 1978-07-20 Fujitsu Ltd Production of semiconductor device
US4104090A (en) * 1977-02-24 1978-08-01 International Business Machines Corporation Total dielectric isolation utilizing a combination of reactive ion etching, anodic etching, and thermal oxidation
JPS53123673A (en) * 1977-04-04 1978-10-28 Nec Corp Manufacture of semiconductor device
DE2857837C2 (de) * 1977-10-26 1983-07-14 Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa Verfahren zur Herstellung einer Halbleitervorrichtung

Also Published As

Publication number Publication date
DE3024084A1 (de) 1981-02-05
US4234357A (en) 1980-11-18
GB2054265B (en) 1983-08-10
NL8004099A (nl) 1981-01-20
GB2054265A (en) 1981-02-11
JPS5617066A (en) 1981-02-18
FR2462023A1 (fr) 1981-02-06

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Legal Events

Date Code Title Description
ST Notification of lapse