NL7905104A - Halfgeleiderlaser en werkwijze voor de vervaardiging daarvan. - Google Patents
Halfgeleiderlaser en werkwijze voor de vervaardiging daarvan. Download PDFInfo
- Publication number
- NL7905104A NL7905104A NL7905104A NL7905104A NL7905104A NL 7905104 A NL7905104 A NL 7905104A NL 7905104 A NL7905104 A NL 7905104A NL 7905104 A NL7905104 A NL 7905104A NL 7905104 A NL7905104 A NL 7905104A
- Authority
- NL
- Netherlands
- Prior art keywords
- semiconductor layer
- layer
- semiconductor
- substrate
- thickness
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 79
- 238000000034 method Methods 0.000 title claims description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000000758 substrate Substances 0.000 claims description 43
- 239000013078 crystal Substances 0.000 claims description 31
- 239000007791 liquid phase Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 230000003287 optical effect Effects 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims 1
- 230000010355 oscillation Effects 0.000 description 10
- 239000000243 solution Substances 0.000 description 8
- 230000000737 periodic effect Effects 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 125000005842 heteroatom Chemical group 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 230000000087 stabilizing effect Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000012136 culture method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012858 resilient material Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7867478 | 1978-06-30 | ||
| JP7867478A JPS5522807A (en) | 1978-06-30 | 1978-06-30 | Semiconductor laser element and manufacturing of the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7905104A true NL7905104A (nl) | 1980-01-03 |
Family
ID=13668405
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7905104A NL7905104A (nl) | 1978-06-30 | 1979-06-29 | Halfgeleiderlaser en werkwijze voor de vervaardiging daarvan. |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4329658A (fr) |
| JP (1) | JPS5522807A (fr) |
| CA (1) | CA1125898A (fr) |
| DE (1) | DE2926367C2 (fr) |
| FR (1) | FR2430110B1 (fr) |
| GB (1) | GB2025123B (fr) |
| NL (1) | NL7905104A (fr) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2495850A1 (fr) * | 1980-12-05 | 1982-06-11 | Thomson Csf | Laser a semiconducteur a grande longueur d'onde |
| JPS59149558U (ja) * | 1983-03-28 | 1984-10-05 | スズキ株式会社 | コンベヤにおける搬送台 |
| JPS6042890A (ja) * | 1983-08-18 | 1985-03-07 | Mitsubishi Electric Corp | 面発光形半導体レ−ザ及びその製造方法 |
| US9882348B2 (en) * | 2013-06-17 | 2018-01-30 | Elio Battista Porcelli | Induction of force performed by the semiconductor laser diodes |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1273284A (en) * | 1970-10-13 | 1972-05-03 | Standard Telephones Cables Ltd | Improvements in or relating to injection lasers |
| US3883821A (en) * | 1974-01-17 | 1975-05-13 | Bell Telephone Labor Inc | Single transverse mode operation in double heterostructure junction lasers having an active layer of nonuniform thickness |
| JPS51111344A (en) | 1975-03-26 | 1976-10-01 | Hitachi Ltd | A method of diffraction grating |
| US4033796A (en) * | 1975-06-23 | 1977-07-05 | Xerox Corporation | Method of making buried-heterostructure diode injection laser |
| US3978428A (en) * | 1975-06-23 | 1976-08-31 | Xerox Corporation | Buried-heterostructure diode injection laser |
| GB1530323A (en) * | 1975-12-22 | 1978-10-25 | Standard Telephones Cables Ltd | Semiconductor waveguide structures |
| US4099999A (en) * | 1977-06-13 | 1978-07-11 | Xerox Corporation | Method of making etched-striped substrate planar laser |
| EP0000557B1 (fr) * | 1977-08-01 | 1981-12-30 | Hitachi, Ltd. | Laser à semi-conducteur |
-
1978
- 1978-06-30 JP JP7867478A patent/JPS5522807A/ja active Granted
-
1979
- 1979-06-22 US US06/051,144 patent/US4329658A/en not_active Expired - Lifetime
- 1979-06-28 FR FR7916716A patent/FR2430110B1/fr not_active Expired
- 1979-06-29 CA CA330,850A patent/CA1125898A/fr not_active Expired
- 1979-06-29 DE DE2926367A patent/DE2926367C2/de not_active Expired
- 1979-06-29 GB GB7922668A patent/GB2025123B/en not_active Expired
- 1979-06-29 NL NL7905104A patent/NL7905104A/nl not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5522807A (en) | 1980-02-18 |
| FR2430110B1 (fr) | 1986-01-24 |
| CA1125898A (fr) | 1982-06-15 |
| DE2926367C2 (de) | 1986-05-15 |
| GB2025123B (en) | 1982-06-16 |
| GB2025123A (en) | 1980-01-16 |
| JPS5741834B2 (fr) | 1982-09-04 |
| FR2430110A1 (fr) | 1980-01-25 |
| US4329658A (en) | 1982-05-11 |
| DE2926367A1 (de) | 1980-01-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1A | A request for search or an international-type search has been filed | ||
| BB | A search report has been drawn up | ||
| BC | A request for examination has been filed | ||
| A85 | Still pending on 85-01-01 | ||
| BV | The patent application has lapsed |