SE7902980L - Halvledaranordning - Google Patents

Halvledaranordning

Info

Publication number
SE7902980L
SE7902980L SE7902980A SE7902980A SE7902980L SE 7902980 L SE7902980 L SE 7902980L SE 7902980 A SE7902980 A SE 7902980A SE 7902980 A SE7902980 A SE 7902980A SE 7902980 L SE7902980 L SE 7902980L
Authority
SE
Sweden
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
SE7902980A
Other languages
English (en)
Inventor
T H Enzlin
A J Janssen
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of SE7902980L publication Critical patent/SE7902980L/sv

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/914Polysilicon containing oxygen, nitrogen, or carbon, e.g. sipos

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
SE7902980A 1978-04-07 1979-04-04 Halvledaranordning SE7902980L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7803706,A NL184185C (nl) 1978-04-07 1978-04-07 Darlingtonschakeling met een geintegreerde halfgeleiderdiode.

Publications (1)

Publication Number Publication Date
SE7902980L true SE7902980L (sv) 1979-10-08

Family

ID=19830612

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7902980A SE7902980L (sv) 1978-04-07 1979-04-04 Halvledaranordning

Country Status (9)

Country Link
US (1) US4288807A (sv)
JP (1) JPS54137284A (sv)
AU (1) AU4580279A (sv)
DE (1) DE2913536C2 (sv)
FR (1) FR2422259A1 (sv)
GB (1) GB2018511B (sv)
IT (1) IT1111929B (sv)
NL (1) NL184185C (sv)
SE (1) SE7902980L (sv)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2449333A1 (fr) * 1979-02-14 1980-09-12 Radiotechnique Compelec Perfectionnement aux dispositifs semi-conducteurs de type darlington
JPS60777B2 (ja) * 1979-05-25 1985-01-10 株式会社東芝 Mos半導体集積回路
NL8005995A (nl) * 1980-11-03 1982-06-01 Philips Nv Halfgeleiderinrichting.
JPS5799771A (en) * 1980-12-12 1982-06-21 Hitachi Ltd Semiconductor device
US4486770A (en) * 1981-04-27 1984-12-04 General Motors Corporation Isolated integrated circuit transistor with transient protection
DE3331631A1 (de) * 1982-09-01 1984-03-01 Mitsubishi Denki K.K., Tokyo Halbleiter-bauelement
JPS5987157U (ja) * 1982-12-01 1984-06-13 株式会社三社電機製作所 ダ−リントントランジスタ
JPS59110166A (ja) * 1982-12-15 1984-06-26 Sansha Electric Mfg Co Ltd ダ−リントントランジスタ
US4783694A (en) * 1984-03-16 1988-11-08 Motorola Inc. Integrated bipolar-MOS semiconductor device with common collector and drain
US4887144A (en) * 1985-07-26 1989-12-12 Texas Instruments Incorporated Topside substrate contact in a trenched semiconductor structure and method of fabrication
US4936928A (en) * 1985-11-27 1990-06-26 Raytheon Company Semiconductor device
GB2183907B (en) * 1985-11-27 1989-10-04 Raytheon Co Semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3913213A (en) * 1974-08-02 1975-10-21 Trw Inc Integrated circuit transistor switch
JPS52149666U (sv) * 1976-05-11 1977-11-12

Also Published As

Publication number Publication date
JPS575061B2 (sv) 1982-01-28
IT7921595A0 (it) 1979-04-04
FR2422259B1 (sv) 1983-01-07
DE2913536C2 (de) 1982-12-09
NL184185C (nl) 1989-05-01
US4288807A (en) 1981-09-08
AU4580279A (en) 1979-10-11
JPS54137284A (en) 1979-10-24
DE2913536A1 (de) 1979-10-18
IT1111929B (it) 1986-01-13
NL184185B (nl) 1988-12-01
NL7803706A (nl) 1979-10-09
GB2018511A (en) 1979-10-17
FR2422259A1 (fr) 1979-11-02
GB2018511B (en) 1982-04-28

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