DK525979A - Halvleder-ladnngsoverfoeringsanordning - Google Patents
Halvleder-ladnngsoverfoeringsanordningInfo
- Publication number
- DK525979A DK525979A DK525979A DK525979A DK525979A DK 525979 A DK525979 A DK 525979A DK 525979 A DK525979 A DK 525979A DK 525979 A DK525979 A DK 525979A DK 525979 A DK525979 A DK 525979A
- Authority
- DK
- Denmark
- Prior art keywords
- ladnngsoverfoeringsanordning
- semiconductor
- semiconductor ladnngsoverfoeringsanordning
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76866—Surface Channel CCD
- H01L29/76883—Three-Phase CCD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76833—Buried channel CCD
- H01L29/7685—Three-Phase CCD
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB7849053 | 1978-12-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DK525979A true DK525979A (da) | 1980-06-20 |
Family
ID=10501808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DK525979A DK525979A (da) | 1978-12-19 | 1979-12-11 | Halvleder-ladnngsoverfoeringsanordning |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4262297A (da) |
| EP (1) | EP0012561B1 (da) |
| JP (1) | JPS5586158A (da) |
| CA (1) | CA1133134A (da) |
| DE (1) | DE2963991D1 (da) |
| DK (1) | DK525979A (da) |
| GB (1) | GB2038089B (da) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8303268A (nl) * | 1983-09-23 | 1985-04-16 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting en halfgeleiderinrichting vervaardigd door toepassing van een dergelijke werkwijze. |
| US4688066A (en) * | 1984-08-31 | 1987-08-18 | Rca Corporation | Opposite direction multiple-phase clocking in adjacent CCD shift registers |
| NL8502478A (nl) * | 1985-09-11 | 1987-04-01 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting. |
| DE3715675A1 (de) * | 1987-05-11 | 1988-12-01 | Messerschmitt Boelkow Blohm | Halbleiterelement |
| JP2565213B2 (ja) * | 1989-10-27 | 1996-12-18 | ソニー株式会社 | 読み出し専用メモリ装置 |
| JP3780003B2 (ja) * | 1993-06-15 | 2006-05-31 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
| US5646427A (en) * | 1995-08-23 | 1997-07-08 | Dalsa, Inc. | Integrated circuit defect tolerant architecture |
| US6376868B1 (en) | 1999-06-15 | 2002-04-23 | Micron Technology, Inc. | Multi-layered gate for a CMOS imager |
| US6654057B1 (en) | 1999-06-17 | 2003-11-25 | Micron Technology, Inc. | Active pixel sensor with a diagonal active area |
| US6414342B1 (en) | 1999-06-18 | 2002-07-02 | Micron Technology Inc. | Photogate with improved short wavelength response for a CMOS imager |
| US6326652B1 (en) | 1999-06-18 | 2001-12-04 | Micron Technology, Inc., | CMOS imager with a self-aligned buried contact |
| US6204524B1 (en) | 1999-07-14 | 2001-03-20 | Micron Technology, Inc. | CMOS imager with storage capacitor |
| JP2001308313A (ja) * | 2000-04-21 | 2001-11-02 | Nec Corp | 電荷転送装置及びそれを用いた固体撮像装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4163239A (en) * | 1971-12-30 | 1979-07-31 | Texas Instruments Incorporated | Second level phase lines for CCD line imager |
| US3946421A (en) * | 1974-06-28 | 1976-03-23 | Texas Instruments Incorporated | Multi phase double level metal charge coupled device |
| US3943543A (en) * | 1974-07-26 | 1976-03-09 | Texas Instruments Incorporated | Three level electrode configuration for three phase charge coupled device |
| US3961352A (en) * | 1975-05-30 | 1976-06-01 | Northern Electric Company Limited | Multi-ripple charge coupled device |
-
1979
- 1979-11-30 US US06/098,851 patent/US4262297A/en not_active Expired - Lifetime
- 1979-12-05 EP EP79302795A patent/EP0012561B1/en not_active Expired
- 1979-12-05 GB GB7942007A patent/GB2038089B/en not_active Expired
- 1979-12-05 DE DE7979302795T patent/DE2963991D1/de not_active Expired
- 1979-12-11 DK DK525979A patent/DK525979A/da not_active Application Discontinuation
- 1979-12-18 JP JP16466479A patent/JPS5586158A/ja active Pending
- 1979-12-19 CA CA342,284A patent/CA1133134A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| EP0012561A1 (en) | 1980-06-25 |
| CA1133134A (en) | 1982-10-05 |
| GB2038089B (en) | 1983-04-13 |
| GB2038089A (en) | 1980-07-16 |
| US4262297A (en) | 1981-04-14 |
| DE2963991D1 (en) | 1982-12-09 |
| JPS5586158A (en) | 1980-06-28 |
| EP0012561B1 (en) | 1982-11-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AHS | Application shelved for other reasons than non-payment |