DE3022122A1 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung

Info

Publication number
DE3022122A1
DE3022122A1 DE3022122A DE3022122A DE3022122A1 DE 3022122 A1 DE3022122 A1 DE 3022122A1 DE 3022122 A DE3022122 A DE 3022122A DE 3022122 A DE3022122 A DE 3022122A DE 3022122 A1 DE3022122 A1 DE 3022122A1
Authority
DE
Germany
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE3022122A
Other languages
English (en)
Other versions
DE3022122C2 (de
Inventor
Junichi Nakamura
Seiji Hata
Iwao Yamasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of DE3022122A1 publication Critical patent/DE3022122A1/de
Application granted granted Critical
Publication of DE3022122C2 publication Critical patent/DE3022122C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H01L29/0808—Emitter regions of bipolar transistors of lateral transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
DE3022122A 1979-06-12 1980-06-12 Halbleitervorrichtung Granted DE3022122A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7387479A JPS55165674A (en) 1979-06-12 1979-06-12 Semiconductor device

Publications (2)

Publication Number Publication Date
DE3022122A1 true DE3022122A1 (de) 1980-12-18
DE3022122C2 DE3022122C2 (de) 1987-12-10

Family

ID=13530771

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3022122A Granted DE3022122A1 (de) 1979-06-12 1980-06-12 Halbleitervorrichtung

Country Status (3)

Country Link
US (1) US4339765A (de)
JP (1) JPS55165674A (de)
DE (1) DE3022122A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0318317A2 (de) * 1987-11-26 1989-05-31 Nec Corporation Halbleiterspeicher mit kleinem Programmierstrom

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS596573A (ja) * 1982-07-02 1984-01-13 Matsushita Electric Ind Co Ltd 横型バイポ−ラトランジスタ
JPH0656848B2 (ja) * 1983-05-30 1994-07-27 三洋電機株式会社 ラテラル型トランジスタ
US4607172A (en) * 1984-02-13 1986-08-19 National Semiconductor Corporation Bipolar strobed transistor latch for a high gain comparator
JPS6174369A (ja) * 1984-09-20 1986-04-16 Sony Corp 半導体装置
JP2955106B2 (ja) * 1992-01-06 1999-10-04 三菱電機株式会社 半導体装置
US5453712A (en) * 1995-01-25 1995-09-26 Honeywell Inc. Circuit for accurately discharging a capacitor
JP2001085442A (ja) * 1999-09-09 2001-03-30 Mitsubishi Electric Corp トランジスタを備えた半導体装置
US7291496B2 (en) 2003-05-22 2007-11-06 University Of Hawaii Ultrasensitive biochemical sensor
US20050205891A1 (en) * 2004-03-18 2005-09-22 Holm-Kennedy James W Distributed channel bipolar devices and architectures
USD848384S1 (en) * 2017-08-17 2019-05-14 Epistar Corporation Transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3958267A (en) * 1973-05-07 1976-05-18 National Semiconductor Corporation Current scaling in lateral pnp structures
US3987477A (en) * 1974-09-25 1976-10-19 Motorola, Inc. Beta compensated integrated current mirror

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3958267A (en) * 1973-05-07 1976-05-18 National Semiconductor Corporation Current scaling in lateral pnp structures
US3987477A (en) * 1974-09-25 1976-10-19 Motorola, Inc. Beta compensated integrated current mirror

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
IBM Technical Disclosure Bulletin, Bd. 18, 1975, Nr. 1, S. 136 *
J. Wüstehube "Integrierte Halbleiterschaltungen, Hamburg 1966, S. 56-63, 91 *
Solid-State Electronics, Bd. 21, 1978, Nr. 9, S. 1187-1190 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0318317A2 (de) * 1987-11-26 1989-05-31 Nec Corporation Halbleiterspeicher mit kleinem Programmierstrom
EP0318317A3 (de) * 1987-11-26 1991-07-31 Nec Corporation Halbleiterspeicher mit kleinem Programmierstrom

Also Published As

Publication number Publication date
US4339765A (en) 1982-07-13
JPS55165674A (en) 1980-12-24
DE3022122C2 (de) 1987-12-10
JPS572186B2 (de) 1982-01-14

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Legal Events

Date Code Title Description
OAP Request for examination filed
OD Request for examination
8128 New person/name/address of the agent

Representative=s name: HENKEL, G., DR.PHIL. FEILER, L., DR.RER.NAT. HAENZ

8127 New person/name/address of the applicant

Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee