IT1133869B - Dispositivo mosfet - Google Patents
Dispositivo mosfetInfo
- Publication number
- IT1133869B IT1133869B IT25290/80A IT2529080A IT1133869B IT 1133869 B IT1133869 B IT 1133869B IT 25290/80 A IT25290/80 A IT 25290/80A IT 2529080 A IT2529080 A IT 2529080A IT 1133869 B IT1133869 B IT 1133869B
- Authority
- IT
- Italy
- Prior art keywords
- mosfet device
- mosfet
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/393—Body regions of DMOS transistors or IGBTs
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US8931579A | 1979-10-30 | 1979-10-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8025290A0 IT8025290A0 (it) | 1980-10-13 |
| IT1133869B true IT1133869B (it) | 1986-07-24 |
Family
ID=22216966
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT25290/80A IT1133869B (it) | 1979-10-30 | 1980-10-13 | Dispositivo mosfet |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5673472A (it) |
| DE (1) | DE3039803A1 (it) |
| FR (1) | FR2469003A1 (it) |
| GB (1) | GB2062349A (it) |
| IT (1) | IT1133869B (it) |
| SE (1) | SE8007492L (it) |
| YU (1) | YU278180A (it) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58153368A (ja) * | 1982-03-09 | 1983-09-12 | Toshiba Corp | 絶縁ゲ−ト型電界効果トランジスタ |
| US4803532A (en) * | 1982-11-27 | 1989-02-07 | Nissan Motor Co., Ltd. | Vertical MOSFET having a proof structure against puncture due to breakdown |
| JPS5998557A (ja) * | 1982-11-27 | 1984-06-06 | Nissan Motor Co Ltd | Ｍｏｓトランジスタ |
| US4567644A (en) * | 1982-12-20 | 1986-02-04 | Signetics Corporation | Method of making triple diffused ISL structure |
| US4974059A (en) * | 1982-12-21 | 1990-11-27 | International Rectifier Corporation | Semiconductor high-power mosfet device |
| DE3465225D1 (en) * | 1983-02-17 | 1987-09-10 | Nissan Motor | A vertical-type mosfet and method of fabricating the same |
| US4743952A (en) * | 1983-04-04 | 1988-05-10 | General Electric Company | Insulated-gate semiconductor device with low on-resistance |
| CA1216968A (en) * | 1983-09-06 | 1987-01-20 | Victor A.K. Temple | Insulated-gate semiconductor device with improved base-to-source electrode short and method of fabricating said short |
| US4587713A (en) * | 1984-02-22 | 1986-05-13 | Rca Corporation | Method for making vertical MOSFET with reduced bipolar effects |
| US4837606A (en) * | 1984-02-22 | 1989-06-06 | General Electric Company | Vertical MOSFET with reduced bipolar effects |
| JPS60196974A (ja) * | 1984-03-19 | 1985-10-05 | Toshiba Corp | 導電変調型ｍｏｓｆｅｔ |
| EP0199293B2 (en) * | 1985-04-24 | 1995-08-30 | General Electric Company | Insulated gate semiconductor device |
| JPS63141375A (ja) * | 1986-12-03 | 1988-06-13 | Fuji Electric Co Ltd | 絶縁ゲ−ト電界効果トランジスタ |
| TW399774U (en) * | 1989-07-03 | 2000-07-21 | Gen Electric | FET, IGBT and MCT structures to enhance operating characteristics |
| JP2503900B2 (ja) * | 1993-07-30 | 1996-06-05 | 日本電気株式会社 | 半導体装置及びそれを用いたモ―タドライバ回路 |
| US5701023A (en) * | 1994-08-03 | 1997-12-23 | National Semiconductor Corporation | Insulated gate semiconductor device typically having subsurface-peaked portion of body region for improved ruggedness |
| DE19828494B4 (de) * | 1998-06-26 | 2005-07-07 | Robert Bosch Gmbh | MOSFET-Bauelement mit Schutzvorrichtung gegen Durchschalten eines parasitären Transistors |
| US6683349B1 (en) * | 1999-10-29 | 2004-01-27 | Sanyo Electric Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US8188538B2 (en) | 2008-12-25 | 2012-05-29 | Rohm Co., Ltd. | Semiconductor device and method of manufacturing semiconductor device |
| JP6168370B2 (ja) * | 2015-12-17 | 2017-07-26 | ローム株式会社 | ＳｉＣ電界効果トランジスタ |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3923553A (en) * | 1969-10-14 | 1975-12-02 | Kogyo Gijutsuin | Method of manufacturing lateral or field-effect transistors |
| US4145703A (en) * | 1977-04-15 | 1979-03-20 | Supertex, Inc. | High power MOS device and fabrication method therefor |
-
1980
- 1980-10-13 IT IT25290/80A patent/IT1133869B/it active
- 1980-10-22 DE DE19803039803 patent/DE3039803A1/de not_active Withdrawn
- 1980-10-24 SE SE8007492A patent/SE8007492L/ not_active Application Discontinuation
- 1980-10-24 GB GB8034309A patent/GB2062349A/en not_active Withdrawn
- 1980-10-28 JP JP15197680A patent/JPS5673472A/ja active Pending
- 1980-10-29 FR FR8023127A patent/FR2469003A1/fr active Pending
- 1980-10-30 YU YU02781/80A patent/YU278180A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| GB2062349A (en) | 1981-05-20 |
| DE3039803A1 (de) | 1981-05-14 |
| YU278180A (en) | 1982-10-31 |
| JPS5673472A (en) | 1981-06-18 |
| FR2469003A1 (fr) | 1981-05-08 |
| IT8025290A0 (it) | 1980-10-13 |
| SE8007492L (sv) | 1981-05-01 |
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