IT1133869B - Dispositivo mosfet - Google Patents
Dispositivo mosfetInfo
- Publication number
- IT1133869B IT1133869B IT25290/80A IT2529080A IT1133869B IT 1133869 B IT1133869 B IT 1133869B IT 25290/80 A IT25290/80 A IT 25290/80A IT 2529080 A IT2529080 A IT 2529080A IT 1133869 B IT1133869 B IT 1133869B
- Authority
- IT
- Italy
- Prior art keywords
- mosfet device
- mosfet
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US8931579A | 1979-10-30 | 1979-10-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8025290A0 IT8025290A0 (it) | 1980-10-13 |
IT1133869B true IT1133869B (it) | 1986-07-24 |
Family
ID=22216966
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT25290/80A IT1133869B (it) | 1979-10-30 | 1980-10-13 | Dispositivo mosfet |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPS5673472A (it) |
DE (1) | DE3039803A1 (it) |
FR (1) | FR2469003A1 (it) |
GB (1) | GB2062349A (it) |
IT (1) | IT1133869B (it) |
SE (1) | SE8007492L (it) |
YU (1) | YU278180A (it) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58153368A (ja) * | 1982-03-09 | 1983-09-12 | Toshiba Corp | 絶縁ゲ−ト型電界効果トランジスタ |
US4803532A (en) * | 1982-11-27 | 1989-02-07 | Nissan Motor Co., Ltd. | Vertical MOSFET having a proof structure against puncture due to breakdown |
JPS5998557A (ja) * | 1982-11-27 | 1984-06-06 | Nissan Motor Co Ltd | Mosトランジスタ |
US4567644A (en) * | 1982-12-20 | 1986-02-04 | Signetics Corporation | Method of making triple diffused ISL structure |
US4974059A (en) * | 1982-12-21 | 1990-11-27 | International Rectifier Corporation | Semiconductor high-power mosfet device |
DE3465225D1 (en) * | 1983-02-17 | 1987-09-10 | Nissan Motor | A vertical-type mosfet and method of fabricating the same |
US4743952A (en) * | 1983-04-04 | 1988-05-10 | General Electric Company | Insulated-gate semiconductor device with low on-resistance |
CA1216968A (en) * | 1983-09-06 | 1987-01-20 | Victor A.K. Temple | Insulated-gate semiconductor device with improved base-to-source electrode short and method of fabricating said short |
US4587713A (en) * | 1984-02-22 | 1986-05-13 | Rca Corporation | Method for making vertical MOSFET with reduced bipolar effects |
US4837606A (en) * | 1984-02-22 | 1989-06-06 | General Electric Company | Vertical MOSFET with reduced bipolar effects |
JPS60196974A (ja) * | 1984-03-19 | 1985-10-05 | Toshiba Corp | 導電変調型mosfet |
DE3677627D1 (de) * | 1985-04-24 | 1991-04-04 | Gen Electric | Halbleiteranordnung mit isoliertem gate. |
JPS63141375A (ja) * | 1986-12-03 | 1988-06-13 | Fuji Electric Co Ltd | 絶縁ゲ−ト電界効果トランジスタ |
TW399774U (en) * | 1989-07-03 | 2000-07-21 | Gen Electric | FET, IGBT and MCT structures to enhance operating characteristics |
JP2503900B2 (ja) * | 1993-07-30 | 1996-06-05 | 日本電気株式会社 | 半導体装置及びそれを用いたモ―タドライバ回路 |
US5701023A (en) * | 1994-08-03 | 1997-12-23 | National Semiconductor Corporation | Insulated gate semiconductor device typically having subsurface-peaked portion of body region for improved ruggedness |
DE19828494B4 (de) * | 1998-06-26 | 2005-07-07 | Robert Bosch Gmbh | MOSFET-Bauelement mit Schutzvorrichtung gegen Durchschalten eines parasitären Transistors |
US6683349B1 (en) * | 1999-10-29 | 2004-01-27 | Sanyo Electric Co., Ltd. | Semiconductor device and method of manufacturing the same |
JP5588671B2 (ja) | 2008-12-25 | 2014-09-10 | ローム株式会社 | 半導体装置の製造方法 |
JP6168370B2 (ja) * | 2015-12-17 | 2017-07-26 | ローム株式会社 | SiC電界効果トランジスタ |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3923553A (en) * | 1969-10-14 | 1975-12-02 | Kogyo Gijutsuin | Method of manufacturing lateral or field-effect transistors |
US4145703A (en) * | 1977-04-15 | 1979-03-20 | Supertex, Inc. | High power MOS device and fabrication method therefor |
-
1980
- 1980-10-13 IT IT25290/80A patent/IT1133869B/it active
- 1980-10-22 DE DE19803039803 patent/DE3039803A1/de not_active Withdrawn
- 1980-10-24 SE SE8007492A patent/SE8007492L/ not_active Application Discontinuation
- 1980-10-24 GB GB8034309A patent/GB2062349A/en not_active Withdrawn
- 1980-10-28 JP JP15197680A patent/JPS5673472A/ja active Pending
- 1980-10-29 FR FR8023127A patent/FR2469003A1/fr active Pending
- 1980-10-30 YU YU02781/80A patent/YU278180A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
GB2062349A (en) | 1981-05-20 |
DE3039803A1 (de) | 1981-05-14 |
IT8025290A0 (it) | 1980-10-13 |
JPS5673472A (en) | 1981-06-18 |
SE8007492L (sv) | 1981-05-01 |
YU278180A (en) | 1982-10-31 |
FR2469003A1 (fr) | 1981-05-08 |
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