JPS5673472A - Longitudinal mosfet device - Google Patents

Longitudinal mosfet device

Info

Publication number
JPS5673472A
JPS5673472A JP15197680A JP15197680A JPS5673472A JP S5673472 A JPS5673472 A JP S5673472A JP 15197680 A JP15197680 A JP 15197680A JP 15197680 A JP15197680 A JP 15197680A JP S5673472 A JPS5673472 A JP S5673472A
Authority
JP
Japan
Prior art keywords
mosfet device
longitudinal mosfet
longitudinal
mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15197680A
Other languages
Japanese (ja)
Inventor
Aran Gutsudoman Roorensu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of JPS5673472A publication Critical patent/JPS5673472A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP15197680A 1979-10-30 1980-10-28 Longitudinal mosfet device Pending JPS5673472A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8931579A 1979-10-30 1979-10-30

Publications (1)

Publication Number Publication Date
JPS5673472A true JPS5673472A (en) 1981-06-18

Family

ID=22216966

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15197680A Pending JPS5673472A (en) 1979-10-30 1980-10-28 Longitudinal mosfet device

Country Status (7)

Country Link
JP (1) JPS5673472A (en)
DE (1) DE3039803A1 (en)
FR (1) FR2469003A1 (en)
GB (1) GB2062349A (en)
IT (1) IT1133869B (en)
SE (1) SE8007492L (en)
YU (1) YU278180A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58153368A (en) * 1982-03-09 1983-09-12 Toshiba Corp Insulated gate field effect transistor
JPS63141375A (en) * 1986-12-03 1988-06-13 Fuji Electric Co Ltd Insulated gate field effect transistor
US5631487A (en) * 1993-07-30 1997-05-20 Nec Corporation Semiconductor device and motor driver circuit using the same
JP2016103649A (en) * 2015-12-17 2016-06-02 ローム株式会社 Silicon carbide field-effect transistor
US9837531B2 (en) 2008-12-25 2017-12-05 Rohm Co., Ltd. Semiconductor device

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5998557A (en) * 1982-11-27 1984-06-06 Nissan Motor Co Ltd Mos transistor
US4803532A (en) * 1982-11-27 1989-02-07 Nissan Motor Co., Ltd. Vertical MOSFET having a proof structure against puncture due to breakdown
US4567644A (en) * 1982-12-20 1986-02-04 Signetics Corporation Method of making triple diffused ISL structure
US4974059A (en) * 1982-12-21 1990-11-27 International Rectifier Corporation Semiconductor high-power mosfet device
DE3465225D1 (en) * 1983-02-17 1987-09-10 Nissan Motor A vertical-type mosfet and method of fabricating the same
US4743952A (en) * 1983-04-04 1988-05-10 General Electric Company Insulated-gate semiconductor device with low on-resistance
CA1216968A (en) * 1983-09-06 1987-01-20 Victor A.K. Temple Insulated-gate semiconductor device with improved base-to-source electrode short and method of fabricating said short
US4587713A (en) * 1984-02-22 1986-05-13 Rca Corporation Method for making vertical MOSFET with reduced bipolar effects
US4837606A (en) * 1984-02-22 1989-06-06 General Electric Company Vertical MOSFET with reduced bipolar effects
JPS60196974A (en) * 1984-03-19 1985-10-05 Toshiba Corp Conduction modulation type mosfet
EP0199293B2 (en) * 1985-04-24 1995-08-30 General Electric Company Insulated gate semiconductor device
TW399774U (en) * 1989-07-03 2000-07-21 Gen Electric FET, IGBT and MCT structures to enhance operating characteristics
US5701023A (en) * 1994-08-03 1997-12-23 National Semiconductor Corporation Insulated gate semiconductor device typically having subsurface-peaked portion of body region for improved ruggedness
DE19828494B4 (en) * 1998-06-26 2005-07-07 Robert Bosch Gmbh MOSFET device with protective device against switching through a parasitic transistor
US6683349B1 (en) * 1999-10-29 2004-01-27 Sanyo Electric Co., Ltd. Semiconductor device and method of manufacturing the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3923553A (en) * 1969-10-14 1975-12-02 Kogyo Gijutsuin Method of manufacturing lateral or field-effect transistors
US4145703A (en) * 1977-04-15 1979-03-20 Supertex, Inc. High power MOS device and fabrication method therefor

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58153368A (en) * 1982-03-09 1983-09-12 Toshiba Corp Insulated gate field effect transistor
JPH0456473B2 (en) * 1982-03-09 1992-09-08 Tokyo Shibaura Electric Co
JPS63141375A (en) * 1986-12-03 1988-06-13 Fuji Electric Co Ltd Insulated gate field effect transistor
US5631487A (en) * 1993-07-30 1997-05-20 Nec Corporation Semiconductor device and motor driver circuit using the same
US9837531B2 (en) 2008-12-25 2017-12-05 Rohm Co., Ltd. Semiconductor device
US10693001B2 (en) 2008-12-25 2020-06-23 Rohm Co., Ltd. Semiconductor device
US11152501B2 (en) 2008-12-25 2021-10-19 Rohm Co., Ltd. Semiconductor device
US11804545B2 (en) 2008-12-25 2023-10-31 Rohm Co., Ltd. Semiconductor device
JP2016103649A (en) * 2015-12-17 2016-06-02 ローム株式会社 Silicon carbide field-effect transistor

Also Published As

Publication number Publication date
IT1133869B (en) 1986-07-24
GB2062349A (en) 1981-05-20
IT8025290A0 (en) 1980-10-13
DE3039803A1 (en) 1981-05-14
FR2469003A1 (en) 1981-05-08
SE8007492L (en) 1981-05-01
YU278180A (en) 1982-10-31

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