FR2469003A1 - Field effect transistors of the kind mos - Google Patents

Field effect transistors of the kind mos

Info

Publication number
FR2469003A1
FR2469003A1 FR8023127A FR8023127A FR2469003A1 FR 2469003 A1 FR2469003 A1 FR 2469003A1 FR 8023127 A FR8023127 A FR 8023127A FR 8023127 A FR8023127 A FR 8023127A FR 2469003 A1 FR2469003 A1 FR 2469003A1
Authority
FR
Grant status
Application
Patent type
Prior art keywords
region
source
drain
field effect
adjacent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
FR8023127A
Other languages
French (fr)
Inventor
Lawrence Alan Goodman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802Vertical DMOS transistors, i.e. VDMOS transistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095Body region, i.e. base region, of DMOS transistors or IGBTs
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors

Abstract

L'invention concerne un dispositif MOSFET vertical ayant des effets bipolaires parasites diminués, et qui comprend un substrat semiconducteur ayant des première et seconde surfaces majeures et opposées et comprenant, en série, des régions adjacentes de source, de corps et de drain de types alternes de conductivité, et une partie de canal dans la région de corps, la région de source et la région de corps étant adjacentes à la première surface, et la region de drain étant adjacente à la seconde surface, avec une porte disposée sur la partie de canal, une électrode de source en contact avec la région de source, et une électrode de drain en contact avec la région de drain. The invention relates to a vertical MOSFET device having reduced parasitic bipolar effects, and which comprises a semiconductor substrate having first and second major surfaces and opposed and comprising, in series, adjacent regions of source, body and drain types alternate conductivity, and a channel portion in the body region, the source region and the body region being adjacent to the first surface, and the drain region being adjacent to the second surface, with a door disposed on the portion of channel, a source electrode contacting the source region, and a drain electrode contacting the drain region. Selon l'invention, la partie de canal 25 est à une conductivité relativement faible en comparaison avec le restant de la région de corps 8. </P><P>L'invention s'applique notamment aux transistors à effet de champ. According to the invention, the channel portion 25 is at a relatively low conductivity compared with the remainder of the body region 8. </ P> <P> The invention is particularly applicable to field effect transistors.
FR8023127A 1979-10-30 1980-10-29 Field effect transistors of the kind mos Pending FR2469003A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US8931579 true 1979-10-30 1979-10-30

Publications (1)

Publication Number Publication Date
FR2469003A1 true true FR2469003A1 (en) 1981-05-08

Family

ID=22216966

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8023127A Pending FR2469003A1 (en) 1979-10-30 1980-10-29 Field effect transistors of the kind mos

Country Status (4)

Country Link
JP (1) JPS5673472A (en)
DE (1) DE3039803A1 (en)
FR (1) FR2469003A1 (en)
GB (1) GB2062349A (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0456473B2 (en) * 1982-03-09 1992-09-08 Tokyo Shibaura Electric Co
JPH0324791B2 (en) * 1982-11-27 1991-04-04 Nissan Motor
US4803532A (en) * 1982-11-27 1989-02-07 Nissan Motor Co., Ltd. Vertical MOSFET having a proof structure against puncture due to breakdown
US4567644A (en) * 1982-12-20 1986-02-04 Signetics Corporation Method of making triple diffused ISL structure
US4974059A (en) * 1982-12-21 1990-11-27 International Rectifier Corporation Semiconductor high-power mosfet device
DE3465225D1 (en) * 1983-02-17 1987-09-10 Nissan Motor A vertical-type mosfet and method of fabricating the same
US4743952A (en) * 1983-04-04 1988-05-10 General Electric Company Insulated-gate semiconductor device with low on-resistance
CA1216968A (en) * 1983-09-06 1987-01-20 Victor A.K. Temple Insulated-gate semiconductor device with improved base-to-source electrode short and method of fabricating said short
US4587713A (en) * 1984-02-22 1986-05-13 Rca Corporation Method for making vertical MOSFET with reduced bipolar effects
US4837606A (en) * 1984-02-22 1989-06-06 General Electric Company Vertical MOSFET with reduced bipolar effects
JPH0467343B2 (en) * 1984-03-19 1992-10-28 Tokyo Shibaura Electric Co
DE3677627D1 (en) * 1985-04-24 1991-04-04 Gen Electric A semiconductor device having an insulated gate.
JPS63141375A (en) * 1986-12-03 1988-06-13 Fuji Electric Co Ltd Insulated gate field effect transistor
CA2013349C (en) * 1989-07-03 2001-01-30 Tat-Sing Paul Chow Fet, igbt and mct structures to enhance operating characteristics
JP2503900B2 (en) * 1993-07-30 1996-06-05 日本電気株式会社 A semiconductor device and a motor using the same - motor driver circuits
US5701023A (en) * 1994-08-03 1997-12-23 National Semiconductor Corporation Insulated gate semiconductor device typically having subsurface-peaked portion of body region for improved ruggedness
DE19828494B4 (en) * 1998-06-26 2005-07-07 Robert Bosch Gmbh MOSFET device with protection against turning on a parasitic transistor
US6683349B1 (en) * 1999-10-29 2004-01-27 Sanyo Electric Co., Ltd. Semiconductor device and method of manufacturing the same
US8188538B2 (en) 2008-12-25 2012-05-29 Rohm Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
JP6168370B2 (en) * 2015-12-17 2017-07-26 ローム株式会社 SiC field-effect transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3923553A (en) * 1969-10-14 1975-12-02 Kogyo Gijutsuin Method of manufacturing lateral or field-effect transistors
US4145703A (en) * 1977-04-15 1979-03-20 Supertex, Inc. High power MOS device and fabrication method therefor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3923553A (en) * 1969-10-14 1975-12-02 Kogyo Gijutsuin Method of manufacturing lateral or field-effect transistors
US4145703A (en) * 1977-04-15 1979-03-20 Supertex, Inc. High power MOS device and fabrication method therefor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/77 *

Also Published As

Publication number Publication date Type
GB2062349A (en) 1981-05-20 application
JPS5673472A (en) 1981-06-18 application
DE3039803A1 (en) 1981-05-14 application

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