IT8025290A0 - MOSFET DEVICE. - Google Patents

MOSFET DEVICE.

Info

Publication number
IT8025290A0
IT8025290A0 IT8025290A IT2529080A IT8025290A0 IT 8025290 A0 IT8025290 A0 IT 8025290A0 IT 8025290 A IT8025290 A IT 8025290A IT 2529080 A IT2529080 A IT 2529080A IT 8025290 A0 IT8025290 A0 IT 8025290A0
Authority
IT
Italy
Prior art keywords
mosfet device
mosfet
Prior art date
Application number
IT8025290A
Other languages
Italian (it)
Other versions
IT1133869B (en
Inventor
Lawrence Alan Goodman
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of IT8025290A0 publication Critical patent/IT8025290A0/en
Application granted granted Critical
Publication of IT1133869B publication Critical patent/IT1133869B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
IT25290/80A 1979-10-30 1980-10-13 MOSFET DEVICE IT1133869B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8931579A 1979-10-30 1979-10-30

Publications (2)

Publication Number Publication Date
IT8025290A0 true IT8025290A0 (en) 1980-10-13
IT1133869B IT1133869B (en) 1986-07-24

Family

ID=22216966

Family Applications (1)

Application Number Title Priority Date Filing Date
IT25290/80A IT1133869B (en) 1979-10-30 1980-10-13 MOSFET DEVICE

Country Status (7)

Country Link
JP (1) JPS5673472A (en)
DE (1) DE3039803A1 (en)
FR (1) FR2469003A1 (en)
GB (1) GB2062349A (en)
IT (1) IT1133869B (en)
SE (1) SE8007492L (en)
YU (1) YU278180A (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58153368A (en) * 1982-03-09 1983-09-12 Toshiba Corp Insulated gate field effect transistor
US4803532A (en) * 1982-11-27 1989-02-07 Nissan Motor Co., Ltd. Vertical MOSFET having a proof structure against puncture due to breakdown
JPS5998557A (en) * 1982-11-27 1984-06-06 Nissan Motor Co Ltd Mos transistor
US4567644A (en) * 1982-12-20 1986-02-04 Signetics Corporation Method of making triple diffused ISL structure
US4974059A (en) * 1982-12-21 1990-11-27 International Rectifier Corporation Semiconductor high-power mosfet device
DE3465225D1 (en) * 1983-02-17 1987-09-10 Nissan Motor A vertical-type mosfet and method of fabricating the same
US4743952A (en) * 1983-04-04 1988-05-10 General Electric Company Insulated-gate semiconductor device with low on-resistance
CA1216968A (en) * 1983-09-06 1987-01-20 Victor A.K. Temple Insulated-gate semiconductor device with improved base-to-source electrode short and method of fabricating said short
US4587713A (en) * 1984-02-22 1986-05-13 Rca Corporation Method for making vertical MOSFET with reduced bipolar effects
US4837606A (en) * 1984-02-22 1989-06-06 General Electric Company Vertical MOSFET with reduced bipolar effects
JPS60196974A (en) * 1984-03-19 1985-10-05 Toshiba Corp Conduction modulation type mosfet
DE3677627D1 (en) * 1985-04-24 1991-04-04 Gen Electric SEMICONDUCTOR ARRANGEMENT WITH INSULATED GATE.
JPS63141375A (en) * 1986-12-03 1988-06-13 Fuji Electric Co Ltd Insulated gate field effect transistor
TW399774U (en) * 1989-07-03 2000-07-21 Gen Electric FET, IGBT and MCT structures to enhance operating characteristics
JP2503900B2 (en) * 1993-07-30 1996-06-05 日本電気株式会社 Semiconductor device and motor driver circuit using the same
US5701023A (en) * 1994-08-03 1997-12-23 National Semiconductor Corporation Insulated gate semiconductor device typically having subsurface-peaked portion of body region for improved ruggedness
DE19828494B4 (en) * 1998-06-26 2005-07-07 Robert Bosch Gmbh MOSFET device with protective device against switching through a parasitic transistor
US6683349B1 (en) * 1999-10-29 2004-01-27 Sanyo Electric Co., Ltd. Semiconductor device and method of manufacturing the same
JP5588671B2 (en) 2008-12-25 2014-09-10 ローム株式会社 Manufacturing method of semiconductor device
JP6168370B2 (en) * 2015-12-17 2017-07-26 ローム株式会社 SiC field effect transistor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3923553A (en) * 1969-10-14 1975-12-02 Kogyo Gijutsuin Method of manufacturing lateral or field-effect transistors
US4145703A (en) * 1977-04-15 1979-03-20 Supertex, Inc. High power MOS device and fabrication method therefor

Also Published As

Publication number Publication date
IT1133869B (en) 1986-07-24
JPS5673472A (en) 1981-06-18
FR2469003A1 (en) 1981-05-08
YU278180A (en) 1982-10-31
GB2062349A (en) 1981-05-20
SE8007492L (en) 1981-05-01
DE3039803A1 (en) 1981-05-14

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