SE8105257L - Halvledaranordning - Google Patents

Halvledaranordning

Info

Publication number
SE8105257L
SE8105257L SE8105257D SE8105257D SE8105257L SE 8105257 L SE8105257 L SE 8105257L SE 8105257 D SE8105257 D SE 8105257D SE 8105257 D SE8105257 D SE 8105257D SE 8105257 L SE8105257 L SE 8105257L
Authority
SE
Sweden
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
SE8105257D
Other languages
English (en)
Inventor
H M J Vaes
J A Appels
A W Ludikhuize
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of SE8105257L publication Critical patent/SE8105257L/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0878—Impurity concentration or distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Element Separation (AREA)
  • Thyristors (AREA)
SE8105257D 1980-09-08 1981-09-04 Halvledaranordning SE8105257L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE8005053,A NL187415C (nl) 1980-09-08 1980-09-08 Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte.

Publications (1)

Publication Number Publication Date
SE8105257L true SE8105257L (sv) 1982-03-09

Family

ID=19835848

Family Applications (2)

Application Number Title Priority Date Filing Date
SE8105257A SE454732B (sv) 1980-09-08 1981-09-04 Halvledaranordning
SE8105257D SE8105257L (sv) 1980-09-08 1981-09-04 Halvledaranordning

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SE8105257A SE454732B (sv) 1980-09-08 1981-09-04 Halvledaranordning

Country Status (13)

Country Link
US (1) US4422089A (sv)
JP (1) JPS5778168A (sv)
AT (1) AT387105B (sv)
AU (1) AU544603B2 (sv)
CA (1) CA1176762A (sv)
DE (1) DE3135269A1 (sv)
ES (1) ES505199A0 (sv)
FR (1) FR2490012B1 (sv)
GB (1) GB2083700B (sv)
IE (1) IE52204B1 (sv)
IT (1) IT1138578B (sv)
NL (1) NL187415C (sv)
SE (2) SE454732B (sv)

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GB2090053B (en) * 1980-12-19 1984-09-19 Philips Electronic Associated Mesfet
NL8103218A (nl) * 1981-07-06 1983-02-01 Philips Nv Veldeffekttransistor met geisoleerde stuurelektrode.
US4783688A (en) * 1981-12-02 1988-11-08 U.S. Philips Corporation Schottky barrier field effect transistors
US4942440A (en) * 1982-10-25 1990-07-17 General Electric Company High voltage semiconductor devices with reduced on-resistance
US4626879A (en) * 1982-12-21 1986-12-02 North American Philips Corporation Lateral double-diffused MOS transistor devices suitable for source-follower applications
EP0115098B1 (en) * 1982-12-27 1987-03-18 Koninklijke Philips Electronics N.V. Lateral dmos transistor device having an injector region
NL8302092A (nl) * 1983-06-13 1985-01-02 Philips Nv Halfgeleiderinrichting bevattende een veldeffekttransistor.
US4862242A (en) * 1983-12-05 1989-08-29 General Electric Company Semiconductor wafer with an electrically-isolated semiconductor device
US4639761A (en) * 1983-12-16 1987-01-27 North American Philips Corporation Combined bipolar-field effect transistor resurf devices
GB2165090A (en) * 1984-09-26 1986-04-03 Philips Electronic Associated Improving the field distribution in high voltage semiconductor devices
JPS61171165A (ja) * 1985-01-25 1986-08-01 Nissan Motor Co Ltd Ｍｏｓトランジスタ
US4661838A (en) * 1985-10-24 1987-04-28 General Electric Company High voltage semiconductor devices electrically isolated from an integrated circuit substrate
US4823173A (en) * 1986-01-07 1989-04-18 Harris Corporation High voltage lateral MOS structure with depleted top gate region
US4868921A (en) * 1986-09-05 1989-09-19 General Electric Company High voltage integrated circuit devices electrically isolated from an integrated circuit substrate
JPS63173365A (ja) * 1986-11-26 1988-07-16 ゼネラル・エレクトリック・カンパニイ ラテラル形絶縁ゲート半導体装置とその製法
US4933740A (en) * 1986-11-26 1990-06-12 General Electric Company Insulated gate transistor with vertical integral diode and method of fabrication
US4796070A (en) * 1987-01-15 1989-01-03 General Electric Company Lateral charge control semiconductor device and method of fabrication
US4888627A (en) * 1987-05-19 1989-12-19 General Electric Company Monolithically integrated lateral insulated gate semiconductor device
US5023678A (en) * 1987-05-27 1991-06-11 International Rectifier Corporation High power MOSFET and integrated control circuit therefor for high-side switch application
US4866495A (en) * 1987-05-27 1989-09-12 International Rectifier Corporation High power MOSFET and integrated control circuit therefor for high-side switch application
US5191401A (en) * 1989-03-10 1993-03-02 Kabushiki Kaisha Toshiba MOS transistor with high breakdown voltage
US5107312A (en) * 1989-09-11 1992-04-21 Harris Corporation Method of isolating a top gate of a MESFET and the resulting device
DE4201276C1 (sv) * 1992-01-18 1993-06-17 Daimler-Benz Aktiengesellschaft, 7000 Stuttgart, De
TW218424B (sv) * 1992-05-21 1994-01-01 Philips Nv
EP0580254A3 (en) * 1992-07-20 1996-01-03 Philips Electronics Nv Integrated semiconductor circuit
SE500814C2 (sv) * 1993-01-25 1994-09-12 Ericsson Telefon Ab L M Halvledaranordning i ett tunt aktivt skikt med hög genombrottsspänning
SE500815C2 (sv) * 1993-01-25 1994-09-12 Ericsson Telefon Ab L M Dielektriskt isolerad halvledaranordning och förfarande för dess framställning
JP2689874B2 (ja) * 1993-12-17 1997-12-10 関西日本電気株式会社 高耐圧ｍｏｓトランジスタ
US6037632A (en) * 1995-11-06 2000-03-14 Kabushiki Kaisha Toshiba Semiconductor device
US6831331B2 (en) 1995-11-15 2004-12-14 Denso Corporation Power MOS transistor for absorbing surge current
US6242787B1 (en) 1995-11-15 2001-06-05 Denso Corporation Semiconductor device and manufacturing method thereof
JP3547884B2 (ja) * 1995-12-30 2004-07-28 三菱電機株式会社 半導体装置及びその製造方法
DE19701189B4 (de) * 1996-01-18 2005-06-30 International Rectifier Corp., El Segundo Halbleiterbauteil
DE19644821C1 (de) * 1996-10-29 1998-02-12 Daimler Benz Ag Steuerbare Halbleiterstruktur mit verbesserten Schalteigenschaften
US6097205A (en) * 1997-02-14 2000-08-01 Semitest, Inc. Method and apparatus for characterizing a specimen of semiconductor material
DE10023956A1 (de) * 2000-05-16 2001-11-22 Bosch Gmbh Robert Halbleiter-Leistungsbauelement
DE10339505A1 (de) * 2003-08-27 2005-03-24 Siemens Ag Zur Befestigung in einem Kraftfahrzeug vorgesehene Einrichtung zur Reinigung einer Scheibe oder einer Streuscheibe
JP4777676B2 (ja) * 2005-03-23 2011-09-21 本田技研工業株式会社 接合型半導体装置および接合型半導体装置の製造方法
US7211477B2 (en) * 2005-05-06 2007-05-01 Freescale Semiconductor, Inc. High voltage field effect device and method
US9577079B2 (en) 2009-12-17 2017-02-21 Infineon Technologies Ag Tunnel field effect transistors
US9087713B2 (en) * 2012-10-12 2015-07-21 Power Integrations, Inc. Semiconductor device with shared region
US10861938B2 (en) * 2013-07-19 2020-12-08 Nissan Motor Co., Ltd. Semiconductor device and method of manufacturing the same

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US3442723A (en) * 1964-12-30 1969-05-06 Sony Corp Method of making a semiconductor junction by diffusion
JPS51117579A (en) * 1975-04-07 1976-10-15 Nec Corp Junction type field effect transistor
JPS5434684A (en) * 1977-08-23 1979-03-14 Nec Corp Manufacture of junction-type field effect transistor
NL184552C (nl) * 1978-07-24 1989-08-16 Philips Nv Halfgeleiderinrichting voor hoge spanningen.
CA1131801A (en) * 1978-01-18 1982-09-14 Johannes A. Appels Semiconductor device
NL184551C (nl) * 1978-07-24 1989-08-16 Philips Nv Veldeffekttransistor met geisoleerde stuurelektrode.
NL186665C (nl) * 1980-03-10 1992-01-16 Philips Nv Halfgeleiderinrichting.

Also Published As

Publication number Publication date
NL8005053A (nl) 1982-04-01
JPS5778168A (en) 1982-05-15
FR2490012A1 (fr) 1982-03-12
IT8123810A0 (it) 1981-09-04
ES8206917A1 (es) 1982-08-16
IE812047L (en) 1982-03-08
SE454732B (sv) 1988-05-24
ES505199A0 (es) 1982-08-16
CA1176762A (en) 1984-10-23
DE3135269C2 (sv) 1987-03-26
NL187415C (nl) 1991-09-16
IE52204B1 (en) 1987-08-05
DE3135269A1 (de) 1982-06-24
AU544603B2 (en) 1985-06-06
US4422089A (en) 1983-12-20
GB2083700B (en) 1984-10-24
IT1138578B (it) 1986-09-17
ATA386681A (de) 1988-04-15
AU7486881A (en) 1982-03-18
AT387105B (de) 1988-12-12
JPH033390B2 (sv) 1991-01-18
GB2083700A (en) 1982-03-24
FR2490012B1 (fr) 1985-11-22

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