NL189271C - Halfgeleiderinrichting. - Google Patents

Halfgeleiderinrichting.

Info

Publication number
NL189271C
NL189271C NLAANVRAGE8104443,A NL8104443A NL189271C NL 189271 C NL189271 C NL 189271C NL 8104443 A NL8104443 A NL 8104443A NL 189271 C NL189271 C NL 189271C
Authority
NL
Netherlands
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
NLAANVRAGE8104443,A
Other languages
English (en)
Other versions
NL189271B (nl
NL8104443A (nl
Original Assignee
Nippon Telegraph & Telephone
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP13710880A external-priority patent/JPS5760869A/ja
Priority claimed from JP55137674A external-priority patent/JPS5762571A/ja
Application filed by Nippon Telegraph & Telephone filed Critical Nippon Telegraph & Telephone
Publication of NL8104443A publication Critical patent/NL8104443A/nl
Publication of NL189271B publication Critical patent/NL189271B/nl
Application granted granted Critical
Publication of NL189271C publication Critical patent/NL189271C/nl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0113—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors the conductive layers comprising highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4451—Semiconductor materials, e.g. polysilicon
NLAANVRAGE8104443,A 1980-09-30 1981-09-29 Halfgeleiderinrichting. NL189271C (nl)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP13710880 1980-09-30
JP13710880A JPS5760869A (en) 1980-09-30 1980-09-30 Semiconductor device
JP55137674A JPS5762571A (en) 1980-10-03 1980-10-03 Solar battery
JP13767480 1980-10-03

Publications (3)

Publication Number Publication Date
NL8104443A NL8104443A (nl) 1982-04-16
NL189271B NL189271B (nl) 1992-09-16
NL189271C true NL189271C (nl) 1993-02-16

Family

ID=26470530

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE8104443,A NL189271C (nl) 1980-09-30 1981-09-29 Halfgeleiderinrichting.

Country Status (6)

Country Link
US (1) US4521794A (nl)
CA (1) CA1171977A (nl)
DE (1) DE3138544C2 (nl)
FR (1) FR2491260B1 (nl)
GB (1) GB2086135B (nl)
NL (1) NL189271C (nl)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2578272B1 (fr) * 1985-03-01 1987-05-22 Centre Nat Rech Scient Procede de formation sur un substrat d'une couche de siliciure de tungstene, utilisable notamment pour la realisation de couches d'interconnexion des circuits integres.
JP2686928B2 (ja) * 1985-08-26 1997-12-08 アンリツ株式会社 シリコン・ゲルマニウム混晶薄膜導電体
US4808552A (en) * 1985-09-11 1989-02-28 Texas Instruments Incorporated Process for making vertically-oriented interconnections for VLSI devices
US4729009A (en) * 1986-02-20 1988-03-01 Texas Instruments Incorporated Gate dielectric including undoped amorphous silicon
US5142641A (en) * 1988-03-23 1992-08-25 Fujitsu Limited CMOS structure for eliminating latch-up of parasitic thyristor
KR920008886B1 (ko) * 1989-05-10 1992-10-10 삼성전자 주식회사 디램셀 및 그 제조방법
US5126805A (en) * 1989-11-24 1992-06-30 Gte Laboratories Incorporated Junction field effect transistor with SiGe contact regions
JP3061406B2 (ja) * 1990-09-28 2000-07-10 株式会社東芝 半導体装置
US5286334A (en) * 1991-10-21 1994-02-15 International Business Machines Corporation Nonselective germanium deposition by UHV/CVD
GB2298737A (en) * 1995-03-07 1996-09-11 Atomic Energy Authority Uk Radiation hardened electronic device
AU8649798A (en) * 1997-10-24 1999-05-17 Sumitomo Special Metals Co., Ltd. Silicon based conductive material and process for production thereof
GB9826519D0 (en) * 1998-12-02 1999-01-27 Arima Optoelectronics Corp Semiconductor devices
JP2001036054A (ja) * 1999-07-19 2001-02-09 Mitsubishi Electric Corp Ｓｏｉ基板の製造方法
US6541322B2 (en) * 2001-05-17 2003-04-01 Macronix International Co. Ltd. Method for preventing gate depletion effects of MOS transistor
KR20090046301A (ko) * 2007-11-05 2009-05-11 삼성전기주식회사 단결정 기판 제조방법 및 이를 이용한 태양전지 제조방법
US8912431B2 (en) * 2009-09-29 2014-12-16 Kyocera Corporation Solar cell element and solar cell module

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3496027A (en) * 1965-05-03 1970-02-17 Rca Corp Thermoelectric generator comprising thermoelements of indium-gallium arsenides or silicon-germanium alloys and a hot strap of silicon containing silicides
DE1539332B2 (de) * 1967-03-21 1971-02-04 Siemens AG, 1000 Berlin u 8000 München Kontaktstück zur Kontaktierung von Thermoelementschenkeln in Thermogenerato ren
NL161920C (nl) * 1971-03-12 1980-03-17 Hitachi Ltd Werkwijze voor het vervaardigen van een half- geleiderinrichting, waarbij de roostervervorming t.g.v. doteerstoffen wordt gecompenseerd.
CA950130A (en) * 1971-04-05 1974-06-25 Rca Corporation Overlay transistor employing highly conductive semiconductor grid and method for making
DE7216704U (de) * 1971-05-03 1972-08-10 Motorola Inc Halbleiteranordnung mit flachliegender grenzschicht
US4106051A (en) * 1972-11-08 1978-08-08 Ferranti Limited Semiconductor devices
GB1448482A (en) * 1973-05-05 1976-09-08 Ferranti Ltd Semiconductor devices
NL7612883A (nl) * 1976-11-19 1978-05-23 Philips Nv Halfgeleiderinrichting, en werkwijze ter ver- vaardiging daarvan.
JPS53139470A (en) * 1977-05-11 1978-12-05 Hitachi Ltd Semiconductor rectifying device
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
US4342044A (en) * 1978-03-08 1982-07-27 Energy Conversion Devices, Inc. Method for optimizing photoresponsive amorphous alloys and devices
GB2049643B (en) * 1979-05-30 1983-07-20 Siemens Ag Process for the production of silicon having semiconducting proprties

Also Published As

Publication number Publication date
GB2086135B (en) 1985-08-21
US4521794A (en) 1985-06-04
FR2491260B1 (fr) 1986-10-10
CA1171977A (en) 1984-07-31
NL189271B (nl) 1992-09-16
FR2491260A1 (fr) 1982-04-02
NL8104443A (nl) 1982-04-16
GB2086135A (en) 1982-05-06
DE3138544C2 (de) 1986-04-10
DE3138544A1 (de) 1982-04-15

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Legal Events

Date Code Title Description
A1A A request for search or an international-type search has been filed
BB A search report has been drawn up
A85 Still pending on 85-01-01
CNR Transfer of rights (patent application after its laying open for public inspection)

Free format text: NIPPON TELEGRAPH AND TELEPHONE CORPORATION

BC A request for examination has been filed
V4 Discontinued because of reaching the maximum lifetime of a patent

Free format text: 20010929