IT8019838A0 - Dispositivo semiconduttore. - Google Patents

Dispositivo semiconduttore.

Info

Publication number
IT8019838A0
IT8019838A0 IT8019838A IT1983880A IT8019838A0 IT 8019838 A0 IT8019838 A0 IT 8019838A0 IT 8019838 A IT8019838 A IT 8019838A IT 1983880 A IT1983880 A IT 1983880A IT 8019838 A0 IT8019838 A0 IT 8019838A0
Authority
IT
Italy
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
IT8019838A
Other languages
English (en)
Other versions
IT1140550B (it
Inventor
Roger Bernard Pierre
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of IT8019838A0 publication Critical patent/IT8019838A0/it
Application granted granted Critical
Publication of IT1140550B publication Critical patent/IT1140550B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0772—Vertical bipolar transistor in combination with resistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
IT19838/80A 1979-02-14 1980-02-11 Dispositivo semiconduttore IT1140550B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7903759A FR2449333A1 (fr) 1979-02-14 1979-02-14 Perfectionnement aux dispositifs semi-conducteurs de type darlington

Publications (2)

Publication Number Publication Date
IT8019838A0 true IT8019838A0 (it) 1980-02-11
IT1140550B IT1140550B (it) 1986-10-01

Family

ID=9221964

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19838/80A IT1140550B (it) 1979-02-14 1980-02-11 Dispositivo semiconduttore

Country Status (10)

Country Link
US (1) US4360822A (it)
JP (1) JPS55111160A (it)
AU (1) AU5536880A (it)
DE (1) DE3003911C2 (it)
FR (1) FR2449333A1 (it)
GB (1) GB2043342B (it)
IE (1) IE800257L (it)
IT (1) IT1140550B (it)
NL (1) NL8000830A (it)
SE (1) SE8001042L (it)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57112027A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Manufacture of semiconductor device
US4486770A (en) * 1981-04-27 1984-12-04 General Motors Corporation Isolated integrated circuit transistor with transient protection
FR2505102B1 (fr) * 1981-04-29 1986-01-24 Radiotechnique Compelec Amplificateur de type darlington forme d'un transistor a effet de champ et d'un transistor bipolaire, et sa realisation en structure semi-conductrice integree
JPS59119733A (ja) * 1982-12-24 1984-07-11 Toshiba Corp 半導体装置
JPS6049649U (ja) * 1983-09-14 1985-04-08 関西日本電気株式会社 半導体装置
US5343071A (en) * 1993-04-28 1994-08-30 Raytheon Company Semiconductor structures having dual surface via holes
US6469882B1 (en) 2001-10-31 2002-10-22 General Electric Company Current transformer initial condition correction

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3624454A (en) * 1969-09-15 1971-11-30 Gen Motors Corp Mesa-type semiconductor device
US3659160A (en) * 1970-02-13 1972-04-25 Texas Instruments Inc Integrated circuit process utilizing orientation dependent silicon etch
NL7307527A (it) * 1973-05-30 1974-12-03
US4011580A (en) * 1973-05-30 1977-03-08 U.S. Philips Corporation Integrated circuit
JPS51126775A (en) * 1975-04-25 1976-11-05 Iwatsu Electric Co Ltd Semiconductor unit manufacturing process
FR2335957A1 (fr) * 1975-12-17 1977-07-15 Radiotechnique Compelec Dispositif semiconducteur monolithique comprenant un pont de redressement
JPS5925389B2 (ja) * 1976-02-04 1984-06-16 三菱電機株式会社 半導体装置
US4057894A (en) * 1976-02-09 1977-11-15 Rca Corporation Controllably valued resistor
US4118728A (en) * 1976-09-03 1978-10-03 Fairchild Camera And Instrument Corporation Integrated circuit structures utilizing conductive buried regions
FR2374743A1 (fr) * 1976-12-20 1978-07-13 Radiotechnique Compelec Transistor multicouche a emetteur compose
FR2377706A1 (fr) * 1977-01-12 1978-08-11 Radiotechnique Compelec Dispositif semi-conducteur integre du type darlington et son procede de fabrication
NL184185C (nl) * 1978-04-07 1989-05-01 Philips Nv Darlingtonschakeling met een geintegreerde halfgeleiderdiode.

Also Published As

Publication number Publication date
FR2449333A1 (fr) 1980-09-12
IT1140550B (it) 1986-10-01
JPS55111160A (en) 1980-08-27
AU5536880A (en) 1980-08-21
DE3003911C2 (de) 1985-07-04
JPH0221147B2 (it) 1990-05-11
US4360822A (en) 1982-11-23
GB2043342A (en) 1980-10-01
GB2043342B (en) 1983-03-16
IE800257L (en) 1980-08-14
DE3003911A1 (de) 1980-08-21
FR2449333B1 (it) 1982-06-04
NL8000830A (nl) 1980-08-18
SE8001042L (sv) 1980-08-15

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