NL173572C - Halfgeleiderinrichting. - Google Patents

Halfgeleiderinrichting.

Info

Publication number
NL173572C
NL173572C NLAANVRAGE7601416,A NL7601416A NL173572C NL 173572 C NL173572 C NL 173572C NL 7601416 A NL7601416 A NL 7601416A NL 173572 C NL173572 C NL 173572C
Authority
NL
Netherlands
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
NLAANVRAGE7601416,A
Other languages
English (en)
Other versions
NL7601416A (nl
NL173572B (nl
Inventor
Roelof Herman Willem I Salters
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NLAANVRAGE7601416,A priority Critical patent/NL173572C/nl
Priority to AU21370/77A priority patent/AU504719B2/en
Priority to CA270,915A priority patent/CA1096499A/en
Priority to IT20122/77A priority patent/IT1077625B/it
Priority to SE7701434D priority patent/SE7701434L/xx
Priority to JP52012566A priority patent/JPS5810865B2/ja
Priority to SE7701434A priority patent/SE409380B/xx
Priority to CH159077A priority patent/CH612783A5/xx
Priority to GB5296/77A priority patent/GB1535615A/en
Priority to DE2705503A priority patent/DE2705503C3/de
Priority to FR7703840A priority patent/FR2341177A1/fr
Priority to AT0092277A priority patent/AT377634B/de
Publication of NL7601416A publication Critical patent/NL7601416A/nl
Priority to US06/158,958 priority patent/US4460911A/en
Publication of NL173572B publication Critical patent/NL173572B/nl
Application granted granted Critical
Publication of NL173572C publication Critical patent/NL173572C/nl

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H01L27/0733—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with capacitors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
NLAANVRAGE7601416,A 1976-02-12 1976-02-12 Halfgeleiderinrichting. NL173572C (nl)

Priority Applications (13)

Application Number Priority Date Filing Date Title
NLAANVRAGE7601416,A NL173572C (nl) 1976-02-12 1976-02-12 Halfgeleiderinrichting.
AU21370/77A AU504719B2 (en) 1976-02-12 1977-01-17 Random access memory device
CA270,915A CA1096499A (en) 1976-02-12 1977-02-02 Semiconductor ram cells having superimposed capacitors
SE7701434D SE7701434L (sv) 1976-02-12 1977-02-09 Halvledaranordning
JP52012566A JPS5810865B2 (ja) 1976-02-12 1977-02-09 ランダムアクセスメモリ−装置
SE7701434A SE409380B (sv) 1976-02-12 1977-02-09 Halvledaranordning for lagring och lesning av information
IT20122/77A IT1077625B (it) 1976-02-12 1977-02-09 Dispositivo semiconduttore
CH159077A CH612783A5 (nl) 1976-02-12 1977-02-09
GB5296/77A GB1535615A (en) 1976-02-12 1977-02-09 Semiconductor devices
DE2705503A DE2705503C3 (de) 1976-02-12 1977-02-10 Halbleiterspeicheranordnung
FR7703840A FR2341177A1 (fr) 1976-02-12 1977-02-11 Dispositif semiconducteur, servant a l'emmagasinage et a la lecture d'information
AT0092277A AT377634B (de) 1976-02-12 1977-02-11 Halbleiteranordnung zum speichern und auslesen von information
US06/158,958 US4460911A (en) 1976-02-12 1980-06-12 Semiconductor device with multiple plate vertically aligned capacitor storage memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7601416,A NL173572C (nl) 1976-02-12 1976-02-12 Halfgeleiderinrichting.

Publications (3)

Publication Number Publication Date
NL7601416A NL7601416A (nl) 1977-08-16
NL173572B NL173572B (nl) 1983-09-01
NL173572C true NL173572C (nl) 1984-02-01

Family

ID=19825610

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7601416,A NL173572C (nl) 1976-02-12 1976-02-12 Halfgeleiderinrichting.

Country Status (11)

Country Link
US (1) US4460911A (nl)
JP (1) JPS5810865B2 (nl)
AU (1) AU504719B2 (nl)
CA (1) CA1096499A (nl)
CH (1) CH612783A5 (nl)
DE (1) DE2705503C3 (nl)
FR (1) FR2341177A1 (nl)
GB (1) GB1535615A (nl)
IT (1) IT1077625B (nl)
NL (1) NL173572C (nl)
SE (2) SE7701434L (nl)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2720533A1 (de) * 1977-05-06 1978-11-09 Siemens Ag Monolithisch integrierte schaltungsanordnung mit ein-transistor- speicherelementen
US4475118A (en) * 1978-12-21 1984-10-02 National Semiconductor Corporation Dynamic MOS RAM with storage cells having a mainly insulated first plate
US5109258A (en) * 1980-05-07 1992-04-28 Texas Instruments Incorporated Memory cell made by selective oxidation of polysilicon
US5357131A (en) * 1982-03-10 1994-10-18 Hitachi, Ltd. Semiconductor memory with trench capacitor
US4649406A (en) * 1982-12-20 1987-03-10 Fujitsu Limited Semiconductor memory device having stacked capacitor-type memory cells
JPH073862B2 (ja) * 1983-07-27 1995-01-18 株式会社日立製作所 半導体記憶装置
JPH0682783B2 (ja) * 1985-03-29 1994-10-19 三菱電機株式会社 容量およびその製造方法
CN1034533C (zh) * 1985-05-01 1997-04-09 得克萨斯仪器公司 超大规模集成电路静态随机存储器
US4685197A (en) * 1986-01-07 1987-08-11 Texas Instruments Incorporated Fabricating a stacked capacitor
JPS63146461A (ja) * 1986-12-10 1988-06-18 Mitsubishi Electric Corp 半導体記憶装置
JPS63198323A (ja) * 1987-02-13 1988-08-17 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH0294471A (ja) * 1988-09-30 1990-04-05 Toshiba Corp 半導体記憶装置およびその製造方法
US4864464A (en) * 1989-01-09 1989-09-05 Micron Technology, Inc. Low-profile, folded-plate dram-cell capacitor fabricated with two mask steps
US5194752A (en) * 1989-05-23 1993-03-16 Kabushiki Kaisha Toshiba Semiconductor memory device
ATE155928T1 (de) * 1990-05-31 1997-08-15 Canon Kk Verfahren zur herstellung einer halbleiterspeicheranordnung mit kondensator
US5036020A (en) * 1990-08-31 1991-07-30 Texas Instrument Incorporated Method of fabricating microelectronic device incorporating capacitor having lowered topographical profile
JPH05136363A (ja) * 1991-11-15 1993-06-01 Sharp Corp 半導体記憶装置
JPH0745717A (ja) * 1993-07-29 1995-02-14 Oki Electric Ind Co Ltd 半導体メモリ装置及びその製造方法
US5712813A (en) * 1996-10-17 1998-01-27 Zhang; Guobiao Multi-level storage capacitor structure with improved memory density
EP0893831A1 (en) * 1997-07-23 1999-01-27 STMicroelectronics S.r.l. High voltage capacitor
US6420746B1 (en) * 1998-10-29 2002-07-16 International Business Machines Corporation Three device DRAM cell with integrated capacitor and local interconnect
DE102004038528A1 (de) * 2004-08-07 2006-03-16 Atmel Germany Gmbh Halbleiterstruktur
US8188786B2 (en) 2009-09-24 2012-05-29 International Business Machines Corporation Modularized three-dimensional capacitor array

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3893146A (en) * 1973-12-26 1975-07-01 Teletype Corp Semiconductor capacitor structure and memory cell, and method of making
JPS5812457Y2 (ja) * 1975-12-31 1983-03-09 富士通株式会社 ハンドウタイキオクソウチ
JPS5853512B2 (ja) * 1976-02-13 1983-11-29 株式会社東芝 半導体記憶装置の製造方法
DE2720533A1 (de) * 1977-05-06 1978-11-09 Siemens Ag Monolithisch integrierte schaltungsanordnung mit ein-transistor- speicherelementen

Also Published As

Publication number Publication date
FR2341177B1 (nl) 1982-03-26
DE2705503C3 (de) 1981-01-29
DE2705503B2 (de) 1980-05-22
GB1535615A (en) 1978-12-13
CH612783A5 (nl) 1979-08-15
IT1077625B (it) 1985-05-04
SE409380B (sv) 1979-08-13
AU504719B2 (en) 1979-10-25
DE2705503A1 (de) 1977-08-18
NL7601416A (nl) 1977-08-16
JPS5810865B2 (ja) 1983-02-28
US4460911A (en) 1984-07-17
JPS5298483A (en) 1977-08-18
AU2137077A (en) 1978-07-27
CA1096499A (en) 1981-02-24
NL173572B (nl) 1983-09-01
FR2341177A1 (fr) 1977-09-09
SE7701434L (sv) 1977-08-13

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Legal Events

Date Code Title Description
BC A request for examination has been filed
V1 Lapsed because of non-payment of the annual fee