NL187461C - Halfgeleiderinrichting. - Google Patents
Halfgeleiderinrichting.Info
- Publication number
- NL187461C NL187461C NLAANVRAGE7604558,A NL7604558A NL187461C NL 187461 C NL187461 C NL 187461C NL 7604558 A NL7604558 A NL 7604558A NL 187461 C NL187461 C NL 187461C
- Authority
- NL
- Netherlands
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
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Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50052731A JPS51128268A (en) | 1975-04-30 | 1975-04-30 | Semiconductor unit |
Publications (3)
Publication Number | Publication Date |
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NL7604558A NL7604558A (nl) | 1976-11-02 |
NL187461B NL187461B (nl) | 1991-05-01 |
NL187461C true NL187461C (nl) | 1991-10-01 |
Family
ID=12923062
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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NLAANVRAGE7604558,A NL187461C (nl) | 1975-04-30 | 1976-04-28 | Halfgeleiderinrichting. |
Country Status (7)
Country | Link |
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US (1) | US4062034A (nl) |
JP (1) | JPS51128268A (nl) |
CA (1) | CA1075373A (nl) |
DE (1) | DE2618733C2 (nl) |
FR (1) | FR2309981A1 (nl) |
GB (1) | GB1542651A (nl) |
NL (1) | NL187461C (nl) |
Families Citing this family (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7612883A (nl) * | 1976-11-19 | 1978-05-23 | Philips Nv | Halfgeleiderinrichting, en werkwijze ter ver- vaardiging daarvan. |
FR2376513A1 (fr) * | 1976-12-31 | 1978-07-28 | Radiotechnique Compelec | Dispositif semiconducteur muni d'un film protecteur |
DE2730367A1 (de) * | 1977-07-05 | 1979-01-18 | Siemens Ag | Verfahren zum passivieren von halbleiterelementen |
CA1123525A (en) * | 1977-10-12 | 1982-05-11 | Stanford R. Ovshinsky | High temperature amorphous semiconductor member and method of making same |
CA1136773A (en) * | 1978-08-14 | 1982-11-30 | Norikazu Ohuchi | Semiconductor device |
US4289550A (en) * | 1979-05-25 | 1981-09-15 | Raytheon Company | Method of forming closely spaced device regions utilizing selective etching and diffusion |
JPS5619678A (en) * | 1979-07-27 | 1981-02-24 | Hitachi Ltd | Junction-type field effect semiconductor device |
DE3070390D1 (en) * | 1979-11-13 | 1985-05-02 | Ibm | Process for the formation of the emitter zone of a transistor |
IL61678A (en) * | 1979-12-13 | 1984-04-30 | Energy Conversion Devices Inc | Programmable cell and programmable electronic arrays comprising such cells |
EP0035146B1 (en) * | 1980-02-15 | 1988-10-12 | Matsushita Electric Industrial Co., Ltd. | Semiconductor photoelectric device |
JPS5713777A (en) * | 1980-06-30 | 1982-01-23 | Shunpei Yamazaki | Semiconductor device and manufacture thereof |
JPS56124273A (en) * | 1980-03-04 | 1981-09-29 | Semiconductor Res Found | Semiconductor device |
JPS5946103B2 (ja) * | 1980-03-10 | 1984-11-10 | 日本電信電話株式会社 | トランジスタ |
JPS6026602Y2 (ja) * | 1980-03-19 | 1985-08-10 | ヤンマー農機株式会社 | コンバインにおける結束排藁の立体放出装置 |
JPS56133867A (en) * | 1980-03-21 | 1981-10-20 | Semiconductor Res Found | Thermoelectric emission transistor |
US5859443A (en) * | 1980-06-30 | 1999-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US6900463B1 (en) | 1980-06-30 | 2005-05-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
USRE34658E (en) * | 1980-06-30 | 1994-07-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device of non-single crystal-structure |
US5262350A (en) * | 1980-06-30 | 1993-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Forming a non single crystal semiconductor layer by using an electric current |
US4803528A (en) * | 1980-07-28 | 1989-02-07 | General Electric Company | Insulating film having electrically conducting portions |
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DE3381606D1 (de) * | 1982-02-19 | 1990-06-28 | Hitachi Ltd | Transistor mit heterouebergang und verfahren zu dessen herstellung. |
AU562641B2 (en) | 1983-01-18 | 1987-06-18 | Energy Conversion Devices Inc. | Electronic matrix array |
GB2141579A (en) * | 1983-06-17 | 1984-12-19 | Plessey Co Plc | Improvements in bipolar transistors |
GB2143083B (en) * | 1983-07-06 | 1987-11-25 | Standard Telephones Cables Ltd | Semiconductor structures |
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WO1985003597A1 (en) * | 1984-02-03 | 1985-08-15 | Advanced Micro Devices, Inc. | A bipolar transistor with active elements formed in slots |
US4672413A (en) * | 1984-04-16 | 1987-06-09 | Trw Inc. | Barrier emitter transistor |
JPS60254657A (ja) * | 1984-05-31 | 1985-12-16 | Fujitsu Ltd | 半導体装置 |
GB8410252D0 (en) * | 1984-04-19 | 1984-05-31 | Plessey Co Plc | Shallow source/drain structures |
JPS6124275A (ja) * | 1984-07-13 | 1986-02-01 | Res Dev Corp Of Japan | バイポ−ラトランジスタ |
NL8501769A (nl) * | 1984-10-02 | 1986-05-01 | Imec Interuniversitair Micro E | Bipolaire heterojunctie-transistor en werkwijze voor de vervaardiging daarvan. |
JPS6221694A (ja) * | 1985-07-23 | 1987-01-30 | 河野 隆志 | 扛重機械制御装置 |
GB2180688B (en) * | 1985-09-21 | 1989-09-13 | Stc Plc | Transistors |
JPH0722130B2 (ja) * | 1985-11-25 | 1995-03-08 | 松下電器産業株式会社 | シリコン薄膜およびその作成方法 |
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US4771326A (en) * | 1986-07-09 | 1988-09-13 | Texas Instruments Incorporated | Composition double heterojunction transistor |
JPH0616556B2 (ja) * | 1987-04-14 | 1994-03-02 | 株式会社東芝 | 半導体装置 |
US4983534A (en) * | 1988-01-05 | 1991-01-08 | Nec Corporation | Semiconductor device and method of manufacturing the same |
JPH01283838A (ja) * | 1988-05-10 | 1989-11-15 | Toshiba Corp | 半導体装置 |
US5028973A (en) * | 1989-06-19 | 1991-07-02 | Harris Corporation | Bipolar transistor with high efficient emitter |
GB8926414D0 (en) * | 1989-11-18 | 1990-01-10 | Lsi Logic Europ | Bipolar junction transistors |
US5298455A (en) * | 1991-01-30 | 1994-03-29 | Tdk Corporation | Method for producing a non-single crystal semiconductor device |
EP0501279A1 (en) * | 1991-02-28 | 1992-09-02 | Texas Instruments Incorporated | Microwave heterojunction bipolar transistors suitable for low-power, low-noise and high-power applications and method for fabricating same |
US5446294A (en) * | 1991-07-31 | 1995-08-29 | Texas Instruments Incorporated | Microwave heterojunction bipolar transistors suitable for low-power, low-noise and high-power applications and method for fabricating same |
US5576222A (en) * | 1992-01-27 | 1996-11-19 | Tdk Corp. | Method of making a semiconductor image sensor device |
US5285083A (en) * | 1992-04-27 | 1994-02-08 | The University Of British Columbia | Inverted heterojunction bipolar device having undoped amorphous silicon layer |
US5387813A (en) * | 1992-09-25 | 1995-02-07 | National Semiconductor Corporation | Transistors with emitters having at least three sides |
JPH0851103A (ja) * | 1994-08-08 | 1996-02-20 | Fuji Electric Co Ltd | 薄膜の生成方法 |
JP2904341B2 (ja) * | 1996-03-06 | 1999-06-14 | 日本電気株式会社 | 半導体装置およびその製造方法 |
US5930658A (en) * | 1996-11-26 | 1999-07-27 | Advanced Micro Devices, Inc. | Oxidized oxygen-doped amorphous silicon ultrathin gate oxide structures |
WO2002099890A1 (fr) * | 2001-06-05 | 2002-12-12 | Sony Corporation | Couche semi-conductrice et son procede de formation, et dispositif semi-conducteur et son procede de production |
Family Cites Families (12)
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DE1184178B (de) * | 1960-02-20 | 1964-12-23 | Standard Elektrik Lorenz Ag | Verfahren zum Stabilisieren der Oberflaeche von Halbleiterkoerpern mit pn-UEbergaengen durch Vakuumbedampfen |
US3443175A (en) * | 1967-03-22 | 1969-05-06 | Rca Corp | Pn-junction semiconductor with polycrystalline layer on one region |
US3460007A (en) * | 1967-07-03 | 1969-08-05 | Rca Corp | Semiconductor junction device |
US3519901A (en) * | 1968-01-29 | 1970-07-07 | Texas Instruments Inc | Bi-layer insulation structure including polycrystalline semiconductor material for integrated circuit isolation |
US3651385A (en) * | 1968-09-18 | 1972-03-21 | Sony Corp | Semiconductor device including a polycrystalline diode |
US3664896A (en) * | 1969-07-28 | 1972-05-23 | David M Duncan | Deposited silicon diffusion sources |
US3611070A (en) * | 1970-06-15 | 1971-10-05 | Gen Electric | Voltage-variable capacitor with controllably extendible pn junction region |
BE792589A (fr) * | 1971-10-06 | 1973-03-30 | Ibm | Procede d'obtention de structures semiconductrices par implantation d'ions |
JPS5314420B2 (nl) * | 1973-05-14 | 1978-05-17 | ||
JPS523277B2 (nl) * | 1973-05-19 | 1977-01-27 | ||
JPS5824951B2 (ja) * | 1974-10-09 | 1983-05-24 | ソニー株式会社 | コウガクソウチ |
US3961997A (en) * | 1975-05-12 | 1976-06-08 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Fabrication of polycrystalline solar cells on low-cost substrates |
-
1975
- 1975-04-30 JP JP50052731A patent/JPS51128268A/ja active Granted
-
1976
- 1976-04-23 US US05/679,846 patent/US4062034A/en not_active Expired - Lifetime
- 1976-04-26 GB GB7616883A patent/GB1542651A/en not_active Expired
- 1976-04-27 CA CA251,094A patent/CA1075373A/en not_active Expired
- 1976-04-28 NL NLAANVRAGE7604558,A patent/NL187461C/nl not_active IP Right Cessation
- 1976-04-28 DE DE2618733A patent/DE2618733C2/de not_active Expired
- 1976-04-30 FR FR7613053A patent/FR2309981A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
FR2309981A1 (fr) | 1976-11-26 |
JPS51128268A (en) | 1976-11-09 |
NL187461B (nl) | 1991-05-01 |
JPS5637702B2 (nl) | 1981-09-02 |
GB1542651A (en) | 1979-03-21 |
DE2618733A1 (de) | 1976-11-11 |
CA1075373A (en) | 1980-04-08 |
FR2309981B3 (nl) | 1980-07-18 |
NL7604558A (nl) | 1976-11-02 |
DE2618733C2 (de) | 1987-03-26 |
US4062034A (en) | 1977-12-06 |
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