GB8410252D0 - Shallow source/drain structures - Google Patents

Shallow source/drain structures

Info

Publication number
GB8410252D0
GB8410252D0 GB848410252A GB8410252A GB8410252D0 GB 8410252 D0 GB8410252 D0 GB 8410252D0 GB 848410252 A GB848410252 A GB 848410252A GB 8410252 A GB8410252 A GB 8410252A GB 8410252 D0 GB8410252 D0 GB 8410252D0
Authority
GB
United Kingdom
Prior art keywords
drain structures
shallow source
shallow
source
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
GB848410252A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Co Ltd
Original Assignee
Plessey Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Co Ltd filed Critical Plessey Co Ltd
Priority to GB848410252A priority Critical patent/GB8410252D0/en
Publication of GB8410252D0 publication Critical patent/GB8410252D0/en
Priority to GB08510079A priority patent/GB2159662A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
GB848410252A 1984-04-19 1984-04-19 Shallow source/drain structures Pending GB8410252D0 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB848410252A GB8410252D0 (en) 1984-04-19 1984-04-19 Shallow source/drain structures
GB08510079A GB2159662A (en) 1984-04-19 1985-04-19 Forming diffused junctions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB848410252A GB8410252D0 (en) 1984-04-19 1984-04-19 Shallow source/drain structures

Publications (1)

Publication Number Publication Date
GB8410252D0 true GB8410252D0 (en) 1984-05-31

Family

ID=10559892

Family Applications (2)

Application Number Title Priority Date Filing Date
GB848410252A Pending GB8410252D0 (en) 1984-04-19 1984-04-19 Shallow source/drain structures
GB08510079A Withdrawn GB2159662A (en) 1984-04-19 1985-04-19 Forming diffused junctions

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB08510079A Withdrawn GB2159662A (en) 1984-04-19 1985-04-19 Forming diffused junctions

Country Status (1)

Country Link
GB (2) GB8410252D0 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4933994A (en) * 1987-06-11 1990-06-19 General Electric Company Method for fabricating a self-aligned lightly doped drain semiconductor device with silicide
JPS6454764A (en) * 1987-06-11 1989-03-02 Gen Electric Manufacture of metal oxde semiconductor device
EP0443297B1 (en) * 1990-02-20 1999-09-01 STMicroelectronics S.r.l. Metal-semiconductor ohmic contact forming process
US6720627B1 (en) * 1995-10-04 2004-04-13 Sharp Kabushiki Kaisha Semiconductor device having junction depths for reducing short channel effect

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51128268A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
US4240843A (en) * 1978-05-23 1980-12-23 Western Electric Company, Inc. Forming self-guarded p-n junctions by epitaxial regrowth of amorphous regions using selective radiation annealing
WO1983003032A1 (en) * 1982-02-19 1983-09-01 Tanaka, Tomoyuki Semiconductor device and method of fabricating the same

Also Published As

Publication number Publication date
GB8510079D0 (en) 1985-05-30
GB2159662A (en) 1985-12-04

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