GB2178593B - Transistor manufacture - Google Patents

Transistor manufacture

Info

Publication number
GB2178593B
GB2178593B GB8519488A GB8519488A GB2178593B GB 2178593 B GB2178593 B GB 2178593B GB 8519488 A GB8519488 A GB 8519488A GB 8519488 A GB8519488 A GB 8519488A GB 2178593 B GB2178593 B GB 2178593B
Authority
GB
United Kingdom
Prior art keywords
transistor manufacture
transistor
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8519488A
Other versions
GB2178593A (en
GB8519488D0 (en
Inventor
Roger Leslie Baker
Colin Nicholas Duckworth
David William Mcneill
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
STC PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STC PLC filed Critical STC PLC
Priority to GB8519488A priority Critical patent/GB2178593B/en
Publication of GB8519488D0 publication Critical patent/GB8519488D0/en
Priority to JP17584586A priority patent/JPS6336563A/en
Priority to DE19863625723 priority patent/DE3625723A1/en
Priority to FR8611229A priority patent/FR2585880A1/en
Publication of GB2178593A publication Critical patent/GB2178593A/en
Application granted granted Critical
Publication of GB2178593B publication Critical patent/GB2178593B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
GB8519488A 1985-08-02 1985-08-02 Transistor manufacture Expired GB2178593B (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
GB8519488A GB2178593B (en) 1985-08-02 1985-08-02 Transistor manufacture
JP17584586A JPS6336563A (en) 1985-08-02 1986-07-28 Manufacture of transistor
DE19863625723 DE3625723A1 (en) 1985-08-02 1986-07-30 TRANSISTOR MANUFACTURING
FR8611229A FR2585880A1 (en) 1985-08-02 1986-08-01 PROCESS FOR MANUFACTURING MIXED TRANSISTORS

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8519488A GB2178593B (en) 1985-08-02 1985-08-02 Transistor manufacture

Publications (3)

Publication Number Publication Date
GB8519488D0 GB8519488D0 (en) 1985-09-11
GB2178593A GB2178593A (en) 1987-02-11
GB2178593B true GB2178593B (en) 1989-07-26

Family

ID=10583236

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8519488A Expired GB2178593B (en) 1985-08-02 1985-08-02 Transistor manufacture

Country Status (4)

Country Link
JP (1) JPS6336563A (en)
DE (1) DE3625723A1 (en)
FR (1) FR2585880A1 (en)
GB (1) GB2178593B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2528926B2 (en) * 1988-02-24 1996-08-28 株式会社日立製作所 Semiconductor device and manufacturing method thereof
JPH06151859A (en) * 1992-09-15 1994-05-31 Canon Inc Semiconductor device
DE102009015839B4 (en) 2009-04-01 2019-07-11 Austriamicrosystems Ag Integrated ESD protection circuit

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0051534A2 (en) * 1980-10-29 1982-05-12 FAIRCHILD CAMERA & INSTRUMENT CORPORATION A method of fabricating a self-aligned integrated circuit structure using differential oxide growth
EP0052038A2 (en) * 1980-10-23 1982-05-19 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Method of fabricating integrated circuit structure
EP0066280A2 (en) * 1981-06-02 1982-12-08 Kabushiki Kaisha Toshiba Method for manufacturing semiconductor device
EP0137992A2 (en) * 1983-09-29 1985-04-24 Fujitsu Limited Lateral bipolar transistor formed in a silicon on insulator (SOI) substrate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0052038A2 (en) * 1980-10-23 1982-05-19 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Method of fabricating integrated circuit structure
EP0051534A2 (en) * 1980-10-29 1982-05-12 FAIRCHILD CAMERA & INSTRUMENT CORPORATION A method of fabricating a self-aligned integrated circuit structure using differential oxide growth
EP0066280A2 (en) * 1981-06-02 1982-12-08 Kabushiki Kaisha Toshiba Method for manufacturing semiconductor device
EP0137992A2 (en) * 1983-09-29 1985-04-24 Fujitsu Limited Lateral bipolar transistor formed in a silicon on insulator (SOI) substrate

Also Published As

Publication number Publication date
JPS6336563A (en) 1988-02-17
GB2178593A (en) 1987-02-11
DE3625723A1 (en) 1987-02-12
FR2585880A1 (en) 1987-02-06
GB8519488D0 (en) 1985-09-11

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19930802