NL7612883A - Halfgeleiderinrichting, en werkwijze ter ver- vaardiging daarvan. - Google Patents
Halfgeleiderinrichting, en werkwijze ter ver- vaardiging daarvan.Info
- Publication number
- NL7612883A NL7612883A NL7612883A NL7612883A NL7612883A NL 7612883 A NL7612883 A NL 7612883A NL 7612883 A NL7612883 A NL 7612883A NL 7612883 A NL7612883 A NL 7612883A NL 7612883 A NL7612883 A NL 7612883A
- Authority
- NL
- Netherlands
- Prior art keywords
- semi
- manufacturing
- conductor device
- conductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7612883A NL7612883A (nl) | 1976-11-19 | 1976-11-19 | Halfgeleiderinrichting, en werkwijze ter ver- vaardiging daarvan. |
US05/837,032 US4161745A (en) | 1976-11-19 | 1977-09-27 | Semiconductor device having non-metallic connection zones |
DE2749607A DE2749607C3 (de) | 1976-11-19 | 1977-11-05 | Halbleiteranordnung und Verfahren zu deren Herstellung |
GB47670/77A GB1589938A (en) | 1976-11-19 | 1977-11-16 | Semiconductor devices and their manufacture |
JP52137353A JPS5937867B2 (ja) | 1976-11-19 | 1977-11-17 | 半導体装置およびその製造方法 |
CA291,081A CA1093702A (en) | 1976-11-19 | 1977-11-17 | Semiconductor device and method of manufacturing same |
FR7734709A FR2371779A1 (fr) | 1976-11-19 | 1977-11-18 | Dispositif semi-conducteur a faible capacite parasite et son procede de fabrication |
US06/029,424 US4283837A (en) | 1976-11-19 | 1979-04-12 | Semiconductor device and method of manufacturing same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7612883A NL7612883A (nl) | 1976-11-19 | 1976-11-19 | Halfgeleiderinrichting, en werkwijze ter ver- vaardiging daarvan. |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7612883A true NL7612883A (nl) | 1978-05-23 |
Family
ID=19827254
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7612883A NL7612883A (nl) | 1976-11-19 | 1976-11-19 | Halfgeleiderinrichting, en werkwijze ter ver- vaardiging daarvan. |
Country Status (7)
Country | Link |
---|---|
US (2) | US4161745A (nl) |
JP (1) | JPS5937867B2 (nl) |
CA (1) | CA1093702A (nl) |
DE (1) | DE2749607C3 (nl) |
FR (1) | FR2371779A1 (nl) |
GB (1) | GB1589938A (nl) |
NL (1) | NL7612883A (nl) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL190710C (nl) * | 1978-02-10 | 1994-07-01 | Nec Corp | Geintegreerde halfgeleiderketen. |
NL7806989A (nl) * | 1978-06-29 | 1980-01-03 | Philips Nv | Geintegreerde schakeling. |
NL7900280A (nl) * | 1979-01-15 | 1980-07-17 | Philips Nv | Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan. |
JPS55134962A (en) * | 1979-04-09 | 1980-10-21 | Toshiba Corp | Semiconductor device |
GB2050694B (en) * | 1979-05-07 | 1983-09-28 | Nippon Telegraph & Telephone | Electrode structure for a semiconductor device |
US4785341A (en) * | 1979-06-29 | 1988-11-15 | International Business Machines Corporation | Interconnection of opposite conductivity type semiconductor regions |
DE2945854A1 (de) * | 1979-11-13 | 1981-05-21 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Ionenimplantationsverfahren |
EP0029887B1 (de) * | 1979-12-03 | 1983-07-13 | International Business Machines Corporation | Verfahren zum Herstellen eines vertikalen PNP-Transistors und so hergestellter Transistor |
EP0040436B1 (en) * | 1980-05-20 | 1986-04-30 | Kabushiki Kaisha Toshiba | Semiconductor device |
JPS5721838A (en) * | 1980-07-15 | 1982-02-04 | Toshiba Corp | Semiconductor device |
JPS5737870A (en) * | 1980-08-20 | 1982-03-02 | Toshiba Corp | Semiconductor device |
GB2086135B (en) * | 1980-09-30 | 1985-08-21 | Nippon Telegraph & Telephone | Electrode and semiconductor device provided with the electrode |
US4518981A (en) * | 1981-11-12 | 1985-05-21 | Advanced Micro Devices, Inc. | Merged platinum silicide fuse and Schottky diode and method of manufacture thereof |
NL8105920A (nl) * | 1981-12-31 | 1983-07-18 | Philips Nv | Halfgeleiderinrichting en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting. |
DE3245457A1 (de) * | 1982-12-08 | 1984-06-14 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterelement mit kontaktloch |
NL8303179A (nl) * | 1983-09-15 | 1985-04-01 | Philips Nv | Halfgeleiderinrichting. |
US5298786A (en) * | 1990-12-06 | 1994-03-29 | International Business Machines Corp. | SOI lateral bipolar transistor with edge-strapped base contact and method of fabricating same |
US6326281B1 (en) * | 1998-09-23 | 2001-12-04 | Texas Instruments Incorporated | Integrated circuit isolation |
US6406981B1 (en) * | 2000-06-30 | 2002-06-18 | Intel Corporation | Method for the manufacture of semiconductor devices and circuits |
US6743697B2 (en) * | 2000-06-30 | 2004-06-01 | Intel Corporation | Thin silicon circuits and method for making the same |
CN105706223B (zh) * | 2013-11-07 | 2019-02-12 | 恩智浦美国有限公司 | 键合线布置的可调损耗 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3212162A (en) * | 1962-01-05 | 1965-10-19 | Fairchild Camera Instr Co | Fabricating semiconductor devices |
US3825997A (en) * | 1969-10-02 | 1974-07-30 | Sony Corp | Method for making semiconductor device |
US3600651A (en) * | 1969-12-08 | 1971-08-17 | Fairchild Camera Instr Co | Bipolar and field-effect transistor using polycrystalline epitaxial deposited silicon |
US3764413A (en) * | 1970-11-25 | 1973-10-09 | Nippon Electric Co | Method of producing insulated gate field effect transistors |
GB1342627A (en) * | 1971-03-18 | 1974-01-03 | Ferranti Ltd | Semiconductor devices |
CA969290A (en) * | 1971-10-20 | 1975-06-10 | Alfred C. Ipri | Fabrication of semiconductor devices incorporating polycrystalline silicon |
US3758830A (en) * | 1972-04-10 | 1973-09-11 | Hewlett Packard Co | Transducer formed in peripherally supported thin semiconductor web |
GB1399163A (en) * | 1972-11-08 | 1975-06-25 | Ferranti Ltd | Methods of manufacturing semiconductor devices |
US3837071A (en) * | 1973-01-16 | 1974-09-24 | Rca Corp | Method of simultaneously making a sigfet and a mosfet |
DE2335333B1 (de) * | 1973-07-11 | 1975-01-16 | Siemens Ag | Verfahren zur Herstellung von einer Anordnung mit Feldeffekttransistoren in Komplementaer-MOS-Technik |
US3902188A (en) * | 1973-08-15 | 1975-08-26 | Rca Corp | High frequency transistor |
JPS50137478A (nl) * | 1974-04-18 | 1975-10-31 | ||
GB1501114A (en) * | 1974-04-25 | 1978-02-15 | Rca Corp | Method of making a semiconductor device |
US3959025A (en) * | 1974-05-01 | 1976-05-25 | Rca Corporation | Method of making an insulated gate field effect transistor |
US4074304A (en) * | 1974-10-04 | 1978-02-14 | Nippon Electric Company, Ltd. | Semiconductor device having a miniature junction area and process for fabricating same |
JPS6041458B2 (ja) * | 1975-04-21 | 1985-09-17 | ソニー株式会社 | 半導体装置の製造方法 |
JPS51128268A (en) * | 1975-04-30 | 1976-11-09 | Sony Corp | Semiconductor unit |
JPS52119874A (en) * | 1976-04-02 | 1977-10-07 | Hitachi Ltd | Semi-conductor device |
-
1976
- 1976-11-19 NL NL7612883A patent/NL7612883A/nl not_active Application Discontinuation
-
1977
- 1977-09-27 US US05/837,032 patent/US4161745A/en not_active Expired - Lifetime
- 1977-11-05 DE DE2749607A patent/DE2749607C3/de not_active Expired
- 1977-11-16 GB GB47670/77A patent/GB1589938A/en not_active Expired
- 1977-11-17 CA CA291,081A patent/CA1093702A/en not_active Expired
- 1977-11-17 JP JP52137353A patent/JPS5937867B2/ja not_active Expired
- 1977-11-18 FR FR7734709A patent/FR2371779A1/fr active Granted
-
1979
- 1979-04-12 US US06/029,424 patent/US4283837A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
GB1589938A (en) | 1981-05-20 |
US4161745A (en) | 1979-07-17 |
US4283837A (en) | 1981-08-18 |
JPS5937867B2 (ja) | 1984-09-12 |
JPS5364486A (en) | 1978-06-08 |
DE2749607C3 (de) | 1982-02-11 |
DE2749607B2 (de) | 1981-06-11 |
CA1093702A (en) | 1981-01-13 |
DE2749607A1 (de) | 1978-05-24 |
FR2371779A1 (fr) | 1978-06-16 |
FR2371779B1 (nl) | 1984-01-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BC | A request for examination has been filed | ||
A85 | Still pending on 85-01-01 | ||
BI | The patent application has been withdrawn |