FR2371779A1 - Dispositif semi-conducteur a faible capacite parasite et son procede de fabrication - Google Patents

Dispositif semi-conducteur a faible capacite parasite et son procede de fabrication

Info

Publication number
FR2371779A1
FR2371779A1 FR7734709A FR7734709A FR2371779A1 FR 2371779 A1 FR2371779 A1 FR 2371779A1 FR 7734709 A FR7734709 A FR 7734709A FR 7734709 A FR7734709 A FR 7734709A FR 2371779 A1 FR2371779 A1 FR 2371779A1
Authority
FR
France
Prior art keywords
semiconductor device
manufacturing process
window
parasite capacity
low parasite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7734709A
Other languages
English (en)
Other versions
FR2371779B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2371779A1 publication Critical patent/FR2371779A1/fr
Application granted granted Critical
Publication of FR2371779B1 publication Critical patent/FR2371779B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

Dispositif semi-conducteur comportant un substrat en silicium muni d'une couche isolante comportant une fenêtre. Sur la couche isolante et à l'intérieur de cette fenêtre, on a précipité une couche en silicium. Celle-ci comporte des parties de type de conduction n et p qui, à l'intérieur de la fenêtre, sont limitrophes l'une de l'autre et qui servent de conducteur de connexion et d'électrode de zones actives conductrices respectives de type de conduction n et p du dispositif. Application aux circuits intégrés monolithiques.
FR7734709A 1976-11-19 1977-11-18 Dispositif semi-conducteur a faible capacite parasite et son procede de fabrication Granted FR2371779A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7612883A NL7612883A (nl) 1976-11-19 1976-11-19 Halfgeleiderinrichting, en werkwijze ter ver- vaardiging daarvan.

Publications (2)

Publication Number Publication Date
FR2371779A1 true FR2371779A1 (fr) 1978-06-16
FR2371779B1 FR2371779B1 (fr) 1984-01-13

Family

ID=19827254

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7734709A Granted FR2371779A1 (fr) 1976-11-19 1977-11-18 Dispositif semi-conducteur a faible capacite parasite et son procede de fabrication

Country Status (7)

Country Link
US (2) US4161745A (fr)
JP (1) JPS5937867B2 (fr)
CA (1) CA1093702A (fr)
DE (1) DE2749607C3 (fr)
FR (1) FR2371779A1 (fr)
GB (1) GB1589938A (fr)
NL (1) NL7612883A (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2456389A1 (fr) * 1979-05-07 1980-12-05 Nippon Telegraph & Telephone Structure d'electrodes pour dispositifs semi-conducteurs
EP0028786A1 (fr) * 1979-11-13 1981-05-20 Deutsche ITT Industries GmbH Procédé d'implantation d'ions
EP0029887A1 (fr) * 1979-12-03 1981-06-10 International Business Machines Corporation Procédé de fabrication d'un transistor PNP bipolaire vertical et transistor ainsi obtenu
EP0083816A1 (fr) * 1981-12-31 1983-07-20 Koninklijke Philips Electronics N.V. Dispositif semi-conducteur comprenant une configuration d'interconnexion
EP0111181A2 (fr) * 1982-12-08 1984-06-20 Siemens Aktiengesellschaft Composant semi-conducteur ayant un trou de contact

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL190710C (nl) * 1978-02-10 1994-07-01 Nec Corp Geintegreerde halfgeleiderketen.
NL7806989A (nl) * 1978-06-29 1980-01-03 Philips Nv Geintegreerde schakeling.
NL7900280A (nl) * 1979-01-15 1980-07-17 Philips Nv Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
JPS55134962A (en) * 1979-04-09 1980-10-21 Toshiba Corp Semiconductor device
US4785341A (en) * 1979-06-29 1988-11-15 International Business Machines Corporation Interconnection of opposite conductivity type semiconductor regions
EP0040436B1 (fr) * 1980-05-20 1986-04-30 Kabushiki Kaisha Toshiba Dispositif à semiconducteurs
JPS5721838A (en) * 1980-07-15 1982-02-04 Toshiba Corp Semiconductor device
JPS5737870A (en) * 1980-08-20 1982-03-02 Toshiba Corp Semiconductor device
GB2086135B (en) * 1980-09-30 1985-08-21 Nippon Telegraph & Telephone Electrode and semiconductor device provided with the electrode
US4518981A (en) * 1981-11-12 1985-05-21 Advanced Micro Devices, Inc. Merged platinum silicide fuse and Schottky diode and method of manufacture thereof
NL8303179A (nl) * 1983-09-15 1985-04-01 Philips Nv Halfgeleiderinrichting.
US5298786A (en) * 1990-12-06 1994-03-29 International Business Machines Corp. SOI lateral bipolar transistor with edge-strapped base contact and method of fabricating same
US6326281B1 (en) * 1998-09-23 2001-12-04 Texas Instruments Incorporated Integrated circuit isolation
US6743697B2 (en) * 2000-06-30 2004-06-01 Intel Corporation Thin silicon circuits and method for making the same
US6406981B1 (en) * 2000-06-30 2002-06-18 Intel Corporation Method for the manufacture of semiconductor devices and circuits
WO2015067985A1 (fr) * 2013-11-07 2015-05-14 Freescale Semiconductor, Inc. Pertes réglables d'agencement de fils de liaison

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3600651A (en) * 1969-12-08 1971-08-17 Fairchild Camera Instr Co Bipolar and field-effect transistor using polycrystalline epitaxial deposited silicon
DE2250570A1 (de) * 1971-10-20 1973-04-26 Rca Corp Verfahren zum herstellen von halbleiterbauteilen, die polykristallines silizium aufweisen
GB1342627A (en) * 1971-03-18 1974-01-03 Ferranti Ltd Semiconductor devices
DE2516877A1 (de) * 1974-04-18 1975-10-23 Sony Corp Halbleiterbauelement
NL7604237A (nl) * 1975-04-21 1976-10-25 Sony Corp Halfgeleiderinrichting.

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3212162A (en) * 1962-01-05 1965-10-19 Fairchild Camera Instr Co Fabricating semiconductor devices
US3825997A (en) * 1969-10-02 1974-07-30 Sony Corp Method for making semiconductor device
US3764413A (en) * 1970-11-25 1973-10-09 Nippon Electric Co Method of producing insulated gate field effect transistors
US3758830A (en) * 1972-04-10 1973-09-11 Hewlett Packard Co Transducer formed in peripherally supported thin semiconductor web
GB1399163A (en) * 1972-11-08 1975-06-25 Ferranti Ltd Methods of manufacturing semiconductor devices
US3837071A (en) * 1973-01-16 1974-09-24 Rca Corp Method of simultaneously making a sigfet and a mosfet
DE2335333B1 (de) * 1973-07-11 1975-01-16 Siemens Ag Verfahren zur Herstellung von einer Anordnung mit Feldeffekttransistoren in Komplementaer-MOS-Technik
US3902188A (en) * 1973-08-15 1975-08-26 Rca Corp High frequency transistor
GB1501114A (en) * 1974-04-25 1978-02-15 Rca Corp Method of making a semiconductor device
US3959025A (en) * 1974-05-01 1976-05-25 Rca Corporation Method of making an insulated gate field effect transistor
US4074304A (en) * 1974-10-04 1978-02-14 Nippon Electric Company, Ltd. Semiconductor device having a miniature junction area and process for fabricating same
JPS51128268A (en) * 1975-04-30 1976-11-09 Sony Corp Semiconductor unit
JPS52119874A (en) * 1976-04-02 1977-10-07 Hitachi Ltd Semi-conductor device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3600651A (en) * 1969-12-08 1971-08-17 Fairchild Camera Instr Co Bipolar and field-effect transistor using polycrystalline epitaxial deposited silicon
GB1342627A (en) * 1971-03-18 1974-01-03 Ferranti Ltd Semiconductor devices
DE2250570A1 (de) * 1971-10-20 1973-04-26 Rca Corp Verfahren zum herstellen von halbleiterbauteilen, die polykristallines silizium aufweisen
DE2516877A1 (de) * 1974-04-18 1975-10-23 Sony Corp Halbleiterbauelement
FR2307377A1 (fr) * 1974-04-18 1976-11-05 Sony Corp Composant semi-conducteur
NL7604237A (nl) * 1975-04-21 1976-10-25 Sony Corp Halfgeleiderinrichting.
FR2309036A1 (fr) * 1975-04-21 1976-11-19 Sony Corp Dispositif semiconducteur et son procede de fabrication

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2456389A1 (fr) * 1979-05-07 1980-12-05 Nippon Telegraph & Telephone Structure d'electrodes pour dispositifs semi-conducteurs
EP0028786A1 (fr) * 1979-11-13 1981-05-20 Deutsche ITT Industries GmbH Procédé d'implantation d'ions
EP0029887A1 (fr) * 1979-12-03 1981-06-10 International Business Machines Corporation Procédé de fabrication d'un transistor PNP bipolaire vertical et transistor ainsi obtenu
EP0083816A1 (fr) * 1981-12-31 1983-07-20 Koninklijke Philips Electronics N.V. Dispositif semi-conducteur comprenant une configuration d'interconnexion
EP0111181A2 (fr) * 1982-12-08 1984-06-20 Siemens Aktiengesellschaft Composant semi-conducteur ayant un trou de contact
EP0111181A3 (en) * 1982-12-08 1986-07-09 Siemens Aktiengesellschaft Semiconductor component with a contact hole

Also Published As

Publication number Publication date
NL7612883A (nl) 1978-05-23
FR2371779B1 (fr) 1984-01-13
DE2749607C3 (de) 1982-02-11
CA1093702A (fr) 1981-01-13
JPS5364486A (en) 1978-06-08
DE2749607A1 (de) 1978-05-24
DE2749607B2 (de) 1981-06-11
US4161745A (en) 1979-07-17
US4283837A (en) 1981-08-18
JPS5937867B2 (ja) 1984-09-12
GB1589938A (en) 1981-05-20

Similar Documents

Publication Publication Date Title
FR2371779A1 (fr) Dispositif semi-conducteur a faible capacite parasite et son procede de fabrication
TW360916B (en) Semiconductor device and fabrication process thereof
KR970023863A (ko) 반도체장치 및 그 제조방법
KR920015590A (ko) Ccd 촬상기
KR960002909A (ko) 반도체 수광소자 및 반도체장치와 그들의 제작방법
KR850007718A (ko) 반도체 장치
KR900019261A (ko) 반도체장치
JPS56162875A (en) Semiconductor device
US3265905A (en) Integrated semiconductor resistance element
FR2379134A1 (fr) Memoire a semi-conducteurs
FR2373162A1 (fr) Dispositif a semi-conducteurs
KR900017129A (ko) 반도체 소자용 배면 금속화 스킴(scheme) 및 그의 제조 방법
GB1223704A (en) Semiconductor device
FR2371778A1 (fr) Dispositif semi-conducteur
GB1282616A (en) Semiconductor devices
US3946420A (en) Two level electrode configuration for three phase charge coupled device
US3723830A (en) Low current, now noise avalanche diode
KR840005930A (ko) 반도체 장치(半導體裝置)
JPS63108763A (ja) 半導体集積回路
KR970017918A (ko) 고주파 회로 장치 및 그의 제조 방법
JPS57202776A (en) Semiconductor device
EP0186567A1 (fr) Diac à électrodes coplanaires
KR920015648A (ko) 광 반도체 장치
KR870010631A (ko) 반도체 집적회로장치
JPS6045038A (ja) 半導体装置

Legal Events

Date Code Title Description
ST Notification of lapse